• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

• 한국전자파학회논문지
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• 제16권6호
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• pp.580-585
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• 2005

본 연구를 통하여 슬롯라인-마이크로스트립 변환을 이용한 고효율 전력 결합 모듈을 개발하였다. 제작된 전력 결합 모듈은 본 논문에서 제안하는 두 가지 형태의 전력 결합기를 이용하여 슬롯라인 중앙에서 도파관을 통해 입사된 전력을 분배하고 전력 증폭기를 거친 후 다시 전력이 결합되도록 하였다. 제작한 결과 58.5 GHz와 60 GHz에서 각각 22.96 dBm, 22.81 dBm의 포화 출력 전력과 $80\%$ 이상의(최대 $86\%$)고효율 전력 결합도를 얻을 수 있었다. 각각의 전력 결합기를 back-to-back으로 연결하여 손실을 측정한 경우 두 가지 형태 모두 60 GHz 근방에서 1.2 dB 내의 우수한 삽입손실을 보였으며 반사 손실은 15 dB 이상의 특성을 보였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.489-493
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• 1999

In this paper, an analysis of microstrip-slotline transition is performed using a 3D vector Finite Element Method(FEM). Artificial anistropic absorber technique is employed to implement an matching boundary condition in FEM. On the base of the analysis, power divider/combiner is designed. The structure of the power combiner already developed are Branch-line coupler, Rat-race coupler, Wilkinson coupler, Lange coupler, etc. Which are all planar, If the frequency goes up, the coupling efficiency of these planar couplers is decreased on account of skin loss. Especially, in millimeter-wave band, the efficiency of more than two ways combiner is radically reduced, so that application in power amplifier circuit is almost impossible, Microstrip-slotline transition structure is a power combining technique integrated into wave-guide, so that the loss is small and the efficiency is high. Theoretically, we can mount several transistors into the power-combiner. This makes it possible to develop a high power amplifier. The numerically calculated performances of the device that is, we believe, the best are compared to the experimental results in Ka-Band(26.5GHz-40GHz).

• Current Applied Physics
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• 제18권11호
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• pp.1393-1398
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• 2018

We have investigated Bernal-stacked tetralayer graphene as a function of interlayer distance and perpendicular electric field by using density functional theory calculations. The low-energy band structure was found to be very sensitive to the interlayer distance, undergoing a metal-insulator transition. It can be attributed to the nearest-layer coupling that is more sensitive to the interlayer distance than are the next-nearest-layer couplings. Under a perpendicular electric field above a critical field, six electric-field-induced Dirac cones with mass gaps predicted in tight-binding models were confirmed, however, our density functional theory calculations demonstrate a phase transition to a quantum valley Hall insulator, contrasting to the tight-binding model prediction of an ordinary insulator.

• 한국인터넷방송통신학회논문지
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• 제12권1호
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• pp.189-194
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• 2012

본 논문은 DTV 전환으로 발생하는 여유 대역의 활용 방안으로 LTE 기지국용 주파수의 할당에 관한 논문이다. 확보 가능한 여유 대역 중에서 DTV 채널 51과 인접하여 LTE 기지국용 주파수 할당을 계획할 때 DTV와 LTE 상호간에 간섭이 발생하지 않는 최적의 보호 대역을 산출하였다. LTE 기지국에 의한 DTV 수신기의 간섭 영향과 DTV 송신기에 의한 LTE 기지국의 간섭 영향을 분석하여 LTE 기지국 보호를 위한 보호 대역 5.5 MHz, DTV 수신기 보호 2 MHz의 보호 대역을 제시하였다.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.90-94
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• 2018

The electron band structure of manganese-adsorbed graphene on an SiC(0001) substrate has been studied using angle-resolved photoemission spectroscopy. Upon introducing manganese atoms, the conduction band of graphene, that is observed in pristine graphene indicating intrinsic electron-doping by the substrate, completely disappears and the valence band maximum is observed at 0.4 eV below Fermi energy. At the same time, the slope of the valence band decreases by the presence of manganese atoms, approaching the electron band structure calculated using the local density approximation method. The former provides experimental evidence of the formation of nearly free-standing graphene on an SiC substrate, concomitant with a metal-to-insulator transition. The latter suggests that its electronic correlations are efficiently screened, suggesting that the dielectric property of the substrate is modified by manganese atoms and indicating that electronic correlations in grpahene can also be tuned by foreign atoms. These results pave the way for promising device application using graphene that is semiconducting and charge neutral.

• 한국인터넷방송통신학회논문지
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• 제18권6호
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• pp.163-168
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• 2018

국내개발된 수신용 단일 MMIC 칩과 송신용 전력증폭 MMIC 칩을 W-대역 송수신모듈내에 장착하여 개발하였다. W-대역에서 중요한 잡음지수와 출력 전력 값을 계산하기 위하여 안테나 연결로부터 MMIC까지 W-대역의 전이구조 손실을 분석하였고, 수신부 12채널 및 송신부 5채널로 제작후 분석 결과와 측정값을 비교하였다. 결과적으로 송신부의 출력전력 값은 분석 결과와 상온 및 환경조건에서의 측정 결과 모두 유사한 결과를 얻었다. 수신부의 잡음지수 또한 유사한 결과를 얻었으나, W-대역의 12채널로 제작되는 다채널인 관계로 일부 채널에서는 제작 오차에 의해서 3 dB 정도의 오차를 보였다.

• 전기화학회지
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• 제12권3호
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• pp.234-238
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• 2009

In the excitation spectra of $YNbO_4$ : $Eu^{3+}$, the charge transfer (CT) band around 270 nm due to $[NbO_4]^{3-}$$-Eu^{3+}$ interaction and sharp excitation peaks by f-f transition of $Eu^{3+}$ strongly appeared simultaneously. CT band depended on the structural properties of powders, showing the red-shift with increasing the crystallinity, while the f-f transition peaks were independent of the crystallinity. For $YNb_{1-x}Ta_xO_4$ : $Eu^{3+}$ (x = 0.05.0.2), $[TaO_4]^{3-}$. configuration was locally constructed, leading to the blue-shift in CT band and the decrease in the red emission intensity with increasing the Ta content.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.257-259
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• 2002

As a new host material for a red phosphor for PDP applications, has studied (Y,Gd)$Al_3(BO_3)_4$ which gives non-centrosymmetric sites for $Eu^{3+}$ activators. Vacuum ultraviolet (VUV) excitation spectrum of new red phosphor (Y,Gd)$Al_3(BO_3)_4$:$Eu^{3+}$ has two broad bands. One band with the absorption edge at ca. 168 nm is the band-gap absorption of aluminoborate and the other broad band centered 240 nm is the charge transfer transition between $Eu^{3+}$ and the neighboring oxygen anions. The PL spectrum shows the strongest emission at 617 nm due to the electric dipole $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$, whose luminescent chromaticity is (0.67, 0.33).

• 대한전기학회논문지
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• 제36권9호
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• pp.685-690
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• 1987

Adaptive design of IIR digiral filters using equation error method has been studied. In this paper, a design technique of IIR digital filters using output error method with adaptive compensator is presented. In computer simulation results, it is shown that flat response characteristic in pass-band, below-40[dB] attenuation characteristic in stop-band, sharf cut-off characteristic in transition-band, and phase characteristic is linearin pass-band.