• Title/Summary/Keyword: transfer layer

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A new formulation for unsteady heat transfer of oscillatory flow in a circular tube (원관내 왕복유동에서 비정상 열전달 관계식의 공식화)

  • Park, Sang-Jin;Lee, Dae-Yeong;No, Seung-Tak
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.20 no.9
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    • pp.2953-2964
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    • 1996
  • Heat Transfer with periodic fluctuation of fluid temperature caused by oscillatory flow or compression expansion can be out of phase with balk fluid-wall temperature difference. Newton's law of convection is inadequate to describe this phenomenon. In order to solve this problem the concept of the complex Nusselt number has been introduced by severla researchers. The complex Nusselt number expresses out of phase excellently while the first harmonic is dominant in the variations of both fluid-wall temperature difference and heat flux. However, in the case of oscillatory flow with non-linear wall temperature distribution, the complex Nusselt number is not appropriate to predict the heat transfer phenomena since the higher order harmonic components appear in periodic temperature variation. Analytic solutions to the heat transfer with an sinusoidal well temperature distribution were obtained to investagate the effect of non-linear wall temperature distribution. A new formula considering the thermal boundary layer was suggested based on the solutions. A comparison was also made with the complex Nusselt number. It was verified that the new formula describes well the heat transfer of oscillating flow even if the first harmonic component is not dominant in the fluid-wall temperature difference.

Inflow Noise Characteristics of the Sensor in Low Wave Number Region Using Transfer Function (전달함수를 이용한 저파수 영역에서의 센서 유입 소음 특성 연구)

  • Park, Ji-hye;Lee, Jongkil;Shin, Ku-kyun;Cho, Chi-yong
    • 대한공업교육학회지
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    • v.34 no.1
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    • pp.238-251
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    • 2009
  • The noise itself that affects the sensor array is defined as the noise which happens in the place where the system is installed and the circumference noise which comes from the ocean. The array structure for detecting acoustic signal in the underwater effected turbulent layer flow noise. In this paper to design the conformal array spectral density function was introduced and several cases of flow induced noise which affect transfer function were simulated. Modified Corcos wall pressure model was used as turbulent boundary layer flow noise. The effect of noise has been reduced as integrated sum of transfer function has been reduced by decreasing elastomer thickness and density when kx is in low wave number area. Also the characteristics of transfer function by Corcos wall pressure displayed the product of frequency density function. This simulation results can be applied to the conformal array design in unmmaned underwater vehicle in the near future.

Simple and Clean Transfer Method for Intrinsic Property of Graphene

  • Choe, Sun-Hyeong;Lee, Jae-Hyeon;;Kim, Byeong-Seong;Choe, Yun-Jeong;Hwang, Jong-Seung;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.659-659
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    • 2013
  • Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

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The decision method of free buffer size in hardware protocol stack (Hardware protocol stack에서 free buffer size결정 방법)

  • Moon, Choon-Kyoung;Kim, Young-Keun
    • Proceedings of the KIEE Conference
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    • 2004.11c
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    • pp.212-214
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    • 2004
  • Hardware implemented ring buffer systems and methods are presented for the effective management of the ring buffer in TCP/IP communication. The layer interface of the ring buffer systems transfer free buffer and used buffer size information to the TCP/IP stack upper or low layer. The pointer updation interface calculates a temporary pointer from the data size which is needed by the present pointer of the ring buffer and upper or lowyer layer. The pointer manager of the ring buffer systems is responsible for saving the present pointer of the ring buffer, updating the ring buffer pointer to the new pointer, calculating the free buffer size and used buffer size of the ring buffer, and transferring the information to the upper layer. The ring buffer systems help the TCP/IP layer and TCP/IP upper or lower layer to decide the sending or receiving data size effectively. The delay of transferring data can be lowered by the ring buffer system.

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Effect of Thermal Annealing of Gravure Printed Polymer Solar Cells

  • Lee, Ji-Yeon;Kim, Jung-Woo;Kim, Hyung-Sub;Cho, Sung-Min;Chae, Hee-Yeop
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1571-1572
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    • 2009
  • Polymer solar cells were fabricated with gravure printing process and the effect of thermal annealing of gravure printed organic layer was investigated. The layer structure of polymer solar cells is glass / ITO / hole transfer layer / active layer / Al structure was fabricated. For the active layer, 1:1 ratio of poly-3-hexylthiophene (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) mixture was applied. The P3HT/PCBM blend was gravure printed onto the substrates. The effect of thermal annealing was investigated by changing annealing time and the number of printing. Maximum 3.6% of power conversion efficiency was achieved with gravure printing of organic layer and thermal annealing in this work.

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Implementation of 1.5Gbps Serial ATA (1.5Gbps 직렬 에이티에이 전송 칩 구현)

  • 박상봉;허정화;신영호;홍성혁;박노경
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.7
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    • pp.63-70
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    • 2004
  • This paper describes the link layer and physical layer of the Serial ATA which is the next generation for parallel ATA specification that defines data transfer between PC and peripheral storage devices. The link layer consists of CRC generation/error detection, 8b/10b decoding/encoding, primitive generation/detection block. For the physical layer, it includes CDR(Cock Data Recovery), transmission PLL, serializer/de-serializer. It also includes generation and receipt of OOB(Out-Of-Band) signal, impedance calibration, squelch circuit and comma detection/generation. Additionally, this chip includes TCB(Test Control Block) and BIST(Built-In Selt Test) block to ease debugging and verification. It is fabricated with 0.18${\mu}{\textrm}{m}$ standard CMOS cell library. All the function of the link layer operate properly. For the physical layer, all the blocks operate properly but the data transfer is limited to the 1.28Gbps. This is doe to the affection or parasitic elements and is verified with SPICE simulation.

The Electro-optical Propeties of Multilayer EL devices by blending TPD with P3TH as Emitting layer (TPD와 P3HT의 블렌드한 다층막 EL 소자의 전기-광학적 특성)

  • Kim, Dae-Jung;Gu, Hal-Bon;Kim, Hyung-Kon;Park, Gye-Choon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.542-545
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    • 2002
  • High performance organic electroluminescnet(EL) devices which are composed of organic thin multilayer films are fabricated. The basic structure is ITO/Emitting layer/LiF/Al in which have a blended emitting layer. The emitting layer is consisted of a host material(N,N' diphenyl-N,N' (3-methyl phenyl)-l,l'-biphenyl-4,4'diamine)(TPD)) and a guest emitting material(poly(3-hexylthiophehe)(P3HT)). We think that the energy transfer in blending layer occurred from TPD to P3HT. Red emitting multilayer EL devices were fabricated using tris(8-hydroxyqunolinate) aluminum$(Alq_3)$ as electron transport material. The device structure of ITO/blending layer(TPD+P3HT)$/Alq_3$/LiF/Al was employed. In the Voltage-current-luminance characteristics of multilayer device, the device tum on at the 2V and the luminance of $10{\mu}W/cm^2$ obtain at l0V. Red emission peak at 640nm was observed with this device structure. We have presented evidence that the excitation energy migration between a polymeric host and guest has to be explained. And by using multilayer, the red light emitting EL device enhances not only Voltage-current-luminance characteristic but also stability of device.

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Dependence of contact resistance in SiC device by annealing conditions (어닐링 조건에 의한 SiC 소자에서 콘택저항의 변화)

  • Kim, Seong-Jeen
    • Journal of IKEEE
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    • v.25 no.3
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    • pp.467-472
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    • 2021
  • Stable operation of semiconductor devices is needed even at high temperatures. Among the structures of semiconductor devices, the area that can cause unstable electrical responses at high temperatures is the contact layer between the metal and the semiconductor. In this study, the effect of annealing conditions included in the process of forming a contact layer of nickel silicide(NiSix) on a p-type SiC layer on the specific contact resistance of the contact layer and the total resistance between the metal and the semiconductor was investigated. To this end, a series of electrodes for TLM (transfer length method) measurements were patterned on the 4 inch p-type SiC layer under conditions of changing annealing temperature of 1700 and 1800 ℃ and annealing time of 30 and 60 minutes. As a result, it was confirmed that the annealing conditions affect the resistance of the contact layer and the electrical stability of the device.

Smart Space based on Platform using Big Data for Efficient Decision-making (효율적 의사결정을 위한 빅데이터 활용 스마트 스페이스 플랫폼 연구)

  • Lee, Jin-Kyung
    • Informatization Policy
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    • v.25 no.4
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    • pp.108-120
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    • 2018
  • With the rise of the Fourth Industrial Revolution and I-Korea 4.0, both of which pursue strategies for industrial innovation and for the solution to social problems, the real estate industry needs to change in order to make effective use of available space in smart environments. The implementation of smart spaces is a promising solution for this. The smart space is defined as a good use of space, whether it be a home, office, or retail store, within a smart environment. To enhance the use of smart spaces, efficient decision-making and well-timed and accurate interaction are required. This paper proposes a smart space based on platform which takes advantage of emerging technologies for the efficient storage, processing, analysis, and utilization of big data. The platform is composed of six layers - collection, transfer, storage, service, application, and management - and offers three service frameworks: activity-based, market-based, and policy-based. Based on these smart space services, decision-makers, consumers, clients, and social network participants can make better decisions, respond more quickly, exhibit greater innovation, and develop stronger competitive advantages.

Design and Implementation of the CDMA2000 1x EV-DO Security Layer to which applies 3GPP2 C.S0024-A v.2.0 Standard (3GPP2 C.S0024-A v.2.0 표준을 적용한 CDMA2000 1x EV-DO 보안 계층 설계 및 구현)

  • Yang, Jong-Won;Cho, Jin-Man;Lee, Tae-Hoon;Seo, Chang-Ho
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.18 no.1
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    • pp.59-65
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    • 2008
  • In security layer in the CDMA2000 1x EV-DO, a standard - C.S0024-a v2.0 is being accomplished under the project of 3GPP2(3rd Generation Partnership Project2). Therefore, a security device is needed to implement the security layer which is defined on the standard document for data transfer security between AT(Access Terminal) and AN(Access Network) on CDMA2000 1x EV-DO environment. This paper realizes the security layer system that can make safe and fast transfer of data between AT and AN. It could be applied to various platform environments by designing and implementing the Security Layer in the CDMA2000 1x EV-DO Security Layer to which applies C.S0024-A v2.0 of 3GPP2.