The Electro-optical Propeties of Multilayer EL devices by blending TPD with P3TH as Emitting layer

TPD와 P3HT의 블렌드한 다층막 EL 소자의 전기-광학적 특성

High performance organic electroluminescnet(EL) devices which are composed of organic thin multilayer films are fabricated. The basic structure is ITO/Emitting layer/LiF/Al in which have a blended emitting layer. The emitting layer is consisted of a host material(N,N' diphenyl-N,N' (3-methyl phenyl)-l,l'-biphenyl-4,4'diamine)(TPD)) and a guest emitting material(poly(3-hexylthiophehe)(P3HT)). We think that the energy transfer in blending layer occurred from TPD to P3HT. Red emitting multilayer EL devices were fabricated using tris(8-hydroxyqunolinate) aluminum$(Alq_3)$ as electron transport material. The device structure of ITO/blending layer(TPD+P3HT)$/Alq_3$/LiF/Al was employed. In the Voltage-current-luminance characteristics of multilayer device, the device tum on at the 2V and the luminance of $10{\mu}W/cm^2$ obtain at l0V. Red emission peak at 640nm was observed with this device structure. We have presented evidence that the excitation energy migration between a polymeric host and guest has to be explained. And by using multilayer, the red light emitting EL device enhances not only Voltage-current-luminance characteristic but also stability of device.