• 전기학회논문지
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• 제58권8호
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• pp.1580-1584
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• 2009

We have theoretically analyzed the monolithic integration of vertical cavity lasers with depleted optical thyristor (VCL-DOT) structure and experimentally demonstrated optical logic gates such as AND-gate, OR-gate, and INVERTER implemented by VCL-DOT for an optical programmable gate array. The optical AND and OR gates have been realized by changing a input bias of the single VCL-DOTs and all kinds of optical logic functions are also implemented by adjusting an intensity of the reference input beams into the differential VCL-DOTs. To achieve the high sensitivity, high slope efficiency and low threshold current, a small active region of lasing part and a wide detecting area are simultaneously designed by using a selective oxidation process. The fabricated devices clearly show nonlinear s-shaped current-voltage characteristics and lasing characteristics of a low threshold current with 0.65 mA and output spectrum at 854 nm.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.197-201
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• 2007

The accelerated aging test equipment which is possible to apply voltage and temperature at the same time, is fabricated to predict lifetime of high capacity thyristor in short time. The variations of the forward/reverse breakdown voltage and the leakage current are investigated as an aging diagnostic tool. Lifetimes of the devices which are predicted from the reverse breakdown voltage with an accelerated aging time, have shown 3-15 years.

• Journal of Electrical Engineering and Technology
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• 제8권3호
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• pp.428-435
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• 2013

Flexible AC Transmission System (FACTS) application study on enhancing the flexibility of AC power system has continued to make progress. A thyristor-controlled series capacitor (TCSC) is a useful FACTS device that can control the power flow by adjusting line impedances and minimize the loss of power flow and voltage drop in a transmission system by adjusting line impedances. Reduced power flow loss leads to increased loadability, low system loss, and improved stability of the power system. This study proposes the optimal location and compensation rate method for TCSCs, by considering both the power system loss and voltage drop of transmission systems. The proposed method applies a multi-objective function consisting of a minimizing function for power flow loss and voltage drop. The effectiveness of the proposed method is demonstrated using IEEE 14- and a 30-bus system.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.855-858
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• 1998

Many semiconductive switches are operated in series for high voltage operation. The same number of gate drivers are needed to control all the switches, hence, the drivers cause high cost and system complexity. In this study, a simple and low cost gate driver for high voltage thyristor diode switches is investigated. This gate driver can operate several high voltage thyristor diode switches at the same time.

• 전력전자학회논문지
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• 제5권6호
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• pp.568-574
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• 2000

본 논문에서는 6-펄스 싸이리스터 컨버터에 간단한 보조회로를 추가하여 펄스 수를 증대시키는 방식을 제안한다. 제안한 방식으로 6-펄스 컨버터는 12-펄스, 18-펄스 및 24-펄스 동작을 하여 입력전류 뿐만 아니라 출략전압에서도 파형의 개선효과룹 가셔온다. 또한 입력전류 및 출력전압의 해석을 통하여 시스템의 전 위상각에 대한 보 조싸이라스터의 최적제어각을 계산하고 실험을 통하여 본 방식의 타딩성을 입증한다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.276-280
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• 1998

This paper proposes a harmonic a harmonic reduction technique of the parallel-connected twelve-pulse thyristor rectifiers. The proposed system is an improvement over the diode rectifier system with an active interphase reactor [2]. In this scheme, a low KVA (0.15 Po (PU) ) active current source injects a triangular current into an interphase reactor of a twelve-pulse thyristor rectifier along the phase delay angle. The current injection results in near sinusoidal input current with less than 1% THD. Detailed analysis of the proposed scheme along scheme along with design equations is illustrated. Simulation results verify the concept.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권1호
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• pp.24-29
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• 2004

A new low cost hybrid active filter for thyristor-controlled rectifier load is presented to overcome the high cost problem of the active or the other hybrid active filters. The proposed hybrid active filter which consists of tuned (5th and 7th harmonics) LC passive filters, power factor improvement(PFI) capacitor bank, and active filter compensates power factor as well as harmonic currents. Since most of harmonic currents are filtered by the passive filter and most of reactive power is compensated by the PFI capacitor bank, the power rating of active filter can be minimized, resulting in cost minimization of the proposed hybrid active filter. A 300kVA hybrid active filter system is implemented and tested using 1MVA thyristor rectifier load to verify the operation and performance.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1034-1040
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• 2004

The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권3호
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• pp.167-172
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• 1999

The device characteristics of the base resistance controlled thyristor with self-align corrugated p-base is demonstrated for the first time with varying the n+ cathode width and the temperature form room temperature to $125^{\circ}C$. The experimental results show that the snap-back in the CB-BRT is significantly suppressed irrespective of the various n+ cathode width and the temperature as compared with that of the conventional BRT. The maximum controllable current of the CB-BRT is uniformly higher when compared with that of the conventional BRT over the temperature range from room temperature to $125^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.2133-2135
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• 1998

Many semiconductive switches are operated in series for high voltage operation. The same number of gate drivers are needed to control all the switches, hence, the drivers cause high cost and system complexity. In this study, a simple and low cost gate driver for high voltage thyristor-diode switches is investigated. This gate driver can operate several high voltage thyristor-diode switches at the same time.