• Electrical & Electronic Materials
• /
• v.9 no.8
• /
• pp.813-818
• /
• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.353-353
• /
• 2014

본 연구에서는 Sputter를 이용하여 Room Temp.에서 증착된 NbOx 박막의 열처리에 따른 결정도를 분석하고, 이러한 결정도의 변화가 Metal Insulator Transition특성에 의한 Threshold switching에 어떠한 영향을 미치는 지에 대하여 연구하였다. NbOx 박막의 threshold switching 특성 분석을 위해, 1.4um의 TiN 위에 15nm의 NbOx를 증착하고 Top Electrode로 Pt를 증착하여 측정하였다. 증착된 NbOx는 Nb metal target으로 Reactive Sputter를 이용하여 Room Temp.에서 증착하였으며, 조성은 Partial Oxygen Pressure를 이용하여 조절하였다. 증착된 박막의 결정도는 TEM 및 XRD를 통하여 분석하였고 조성은 XPS를 이용하여 분석하였다. Sputter로 NbOx 증착 시 Partial Oxygen Pressure에 따른 조성을 XPS로 확인한 결과, Partial Oxygen Pressure 2%에서 NbOx의 조성을, 5%이상일 경우, Nb2O5의 조성을 가지는 것으로 확인되었다. Partial Oxygen Pressure 2%에서 증착한 NbOx 박막의 열처리에 따른 결정도를 분석한 결과, As-Dep상태에서는 amorphous상태였다가 600'C이상으로 1분간 열처리를 하였을 때 NbOx의 결정도가 증가함을 확인하였다. I-V 특성 측정 결과, 열처리 온도가 증가함에 따라 initial current가 점진적으로 증가하는 경향을 보이는데, 이는 열처리 시 amorphous상에서 poly-crystalline으로 미세구조의 변화가 일어나면서 grain boundary가 생성되며 생성된 grain boundary를 통해 leakage current가 증가하는 것으로 추측된다. 또한, 결정도가 증가함에 따라 electro-forming voltage가 감소하는 경향을 보이며 안정된 threshold switching 특성을 보이고 있다. 특히, 700'C 1분간 열처리 시에는 electro-forming 과정이 없이 threshold switching이 나타나는 현상이 관찰되었다. 이로 미루어 보아, threshold switching에서 나타나는 forming 현상은 local joule heating에 의해 박막이 결정화 되는 과정으로 추측된다. 결론적으로, 박막의 결정도가 initial current 및 Threshold switching 특성에 큰 영향을 미치는 것으로 예상된다.

• The Korean Journal of Applied Statistics
• /
• v.27 no.6
• /
• pp.1049-1068
• /
• 2014

Autoregressive models are used to analyze an univariate time series data; however, these methods can be inappropriate when a structural break appears in a time series since they assume that a trend is consistent. Threshold autoregressive models (popular regime-switching models) have been proposed to address this problem. Recently, the models have been extended to two regime-switching models with delay parameter. We discuss two regime-switching threshold autoregressive models from a Bayesian point of view. For a Bayesian analysis, we consider a parametric threshold autoregressive model and a nonparametric threshold autoregressive model using Dirichlet process prior. The posterior distributions are derived and the posterior inferences is performed via Markov chain Monte Carlo method and based on two Bayesian threshold autoregressive models. We present a simulation study to compare the performance of the models. We also apply models to gross domestic product data of U.S.A and South Korea.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.67-70
• /
• 1995

Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.

• 전기의세계
• /
• v.23 no.4
• /
• pp.53-59
• /
• 1974

This paper investigates the theoretical properties of a logic element called the multithreshold threshold element, which is a generalization of the single-threshold threshold element. The primary partition os a systematic method of obtaining the multi-threshold realization of a switching function by the index numbers. The concept of comparable vertices of the same index numbers introduced in this paper is very promising for testing the multi-threshold partition by the initial condition to be defined by the minterms of the same index numbers.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.14 no.2
• /
• pp.10-16
• /
• 1977

Memory switching of the amorphous chalcogenide Ge-Te-Si memory devices were observed at various thicknesses and temperatures. For a given thickness, the distribution of threshold voltages shows a strong peaks, which is attributed to the intrinsic switching mechanism. The plot of Vth versus thickness indicates that threshold voltages were lowered and switching fields were raised as thickness was decreased. And threshold voltage sagged as temperature was raised and the fact that threshold voltage can be lowered at the temperature range under Tg was obtained.

• Applied Science and Convergence Technology
• /
• v.23 no.1
• /
• pp.34-39
• /
• 2014

The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

• Environmental and Resource Economics Review
• /
• v.13 no.3
• /
• pp.417-440
• /
• 2004

For the behavior of the wholesale spot price, a regime switching model with time-varying transition probabilities was estimated using the data from the PJM (Pennsylvania-New Jersey-Maryland) market. By including the temperature as an explanatory variable in the transition probability equations, the threshold effect of changing regime is clearly enhanced. And hence the predictability of the price spikes was improved. This means that the model showed a very clear threshold effect, with a low probability of switching for low loads and low temperatures and a high probability for high loads and high temperatures. And temperature showed a clearer threshold effect than load does. This implies that weather-related contracts may help to hedge against the risk in the cost of buying electricity during a summer.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.7 no.5
• /
• pp.907-915
• /
• 2003

A very efficient packet transmission scheme is needed in the radio environment where radio resource is insufficient as compared with the environment of the wired communication. In general, dual mode packet transmission scheme is used broadly. Packets are transmitted through the dedicated or common chamois according to a switching criterion. The general criteria are the length and generation frequency of packet, that is, large and frequent packets are transmitted using a dedicated channel and small and infrequent packets are transmitted using a common channel. The performance of dual mode packet transmission scheme is closely related to the switching criteria. However, it is very difficult to find the optimal switching point because that is not fixed but variable according to the environment such as traffic load, length of generated packets, and the number of channels. In this paper, a new scheme for the dual mode packet transmission scheme using a dynamic switching threshold is proposed where the switching threshold is not fixed but variable according to the network environment. The performance of the proposed method is analyzed using a simulation. From the simulation results, it is shown that the performance of the proposed scheme is not very influenced by the network environment unlike the conventional dual mode packet transmission scheme.

• 전기의세계
• /
• v.22 no.2
• /
• pp.45-50
• /
• 1973

Amorphous semiconducting diodes from As Te Ge systm of which resitivity are 10$^{6}$ -10$^{8}$ .ohm.-cm order, are made and they exhibited several conducting states. A high conductivity, low conductivity and memory state are reported. Temperature dependency of the specimens are widerange. According to the procedure and cooling method, specimens are made easily or not. Threshold voltage of switching and memory diodes is in proportional to compositonal quantity of Arsenic. Threshold voltage is changed widely according to ambient temperature. Threshold voltage of #132 is 620V at 25.deg. C, 70V at 100.deg. C.