• Title/Summary/Keyword: threshold effect

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The Effect of Export on R&D Cost Behavior: Evidence from Korea

  • Chang Youl Ko;Hoon Jung
    • Journal of Korea Trade
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    • v.26 no.5
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    • pp.23-38
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    • 2022
  • Purpose - This research intends to find out whether R&D cost stickiness shows differentiated aspects depending on exports in Korea. A cost behavior that indicates a lower rate of costs decrease when sales decrease than the rate of costs increase when sales increase is called cost stickiness. This sticky cost behavior is caused by considering the adjusting costs. This study aims to empirically verify that R&D cost stickiness is greater in export firms than in non-export firms. We also investigate the effect of exports on R&D cost stickiness is nonlinear. Design/methodology - We obtain data for the analysis from Kis-Value and TS2000 from 2012 to 2020. This study tests for R&D cost stickiness of exports using the cost stickiness model developed by Anderson et al. (2003) that is used in a lot of prior literature. To explore the nonlinear behavior of R&D cost stickiness we include a quadratic term of exports in our model. Findings - The results of our analysis are as follows. First, we observed that R&D costs of export firms are more sticky than that of non-export firms. Our result indicated that export firms are less likely to reduce R&D costs in decreasing sales periods in preparation for future sales recovery. Second, our empirical evidence shows that export firms view R&D costs much favorably. However, we hypothesize that the effect of export intensity on R&D costs may not necessarily be linear. Our result shows the effect of exports intensity on R&D stickiness is thus nonlinear, forming a reverse U-shaped curve. When export intensity exceeds a certain threshold, the growth rate of R&D costs appears to be viewed negatively. Firms with relatively high export intensity do not support R&D costs, viewing them as taking away firms' resources from other more productive costs. On the contrary, those with export intensity under the threshold view R&D costs as beneficial and therefore promote further R&D costs when revenue decreases. Originality/value - The results of this research can contribute academically to the expansion of empirical research on R&D cost stickiness. R&D cost stickiness varies by industry. As a result of our research, the managers of export firms recognize the importance of R&D to lead innovation. We expected that this research contributes to further studies on R&D costs and cost stickiness. Second, this research has implications from a business perspectives. Our findings of export firms' R&D stickiness suggest that export firms' managers should consider keeping the stickiness of R&D when revenue decreases because it is essential for exporting firms to maintain their R&D stickiness to secure long-term competitiveness. R&D stickiness can be used on a practical basis to emphasize the need for continuous investment in exporting firms' R&D activities.

The anti-nociceptive effect of BPC-157 on the incisional pain model in rats

  • Jung, Young-Hoon;Kim, Haekyu;Kim, Hyaejin;Kim, Eunsoo;Baik, Jiseok;Kang, Hyunjong
    • Journal of Dental Anesthesia and Pain Medicine
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    • v.22 no.2
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    • pp.97-105
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    • 2022
  • Background: The pentadecapeptide BPC-157 has been shown to have anti-inflammatory and wound healing effects on multiple target tissues and organs. Peptides have potent anti-inflammatory effects on periodontal tissues in rats with periodontitis. Few studies have investigated the effect of BPC-157 on pain after dental procedures or oral surgeries. The purpose of the present study was to investigate the antinociceptive effects of BPC-157 on postoperative incisional pain in rats. Methods: Sprague-Dawley rats were randomly divided into five groups: control (saline with the same volume), BPC10 (10 ㎍/kg of BPC-157), BPC20 (20 ㎍/kg of BPC-157), BPC40 (40 ㎍/kg of BPC-157), and morphine (5 mg/kg of morphine). A 1-cm longitudinal incision was made through the skin, fascia, and muscle of the plantar aspect of the hind paw in isoflurane-anesthetised rats. Withdrawal responses were measured using von Frey filaments at 0, 2, 6 h and 4, 7 d after incision. The formalin test was also performed to differentiate its anti-nociceptive effect from an inflammatory reaction or central sensitization. Pain behavior was quantified periodically in phases 1 and 2 by counting the number of flinches in the ipsilateral paw after injection with 30 µL of 5% formalin. Results: The threshold of mechanical allodynia was significantly increased in the BPC10, BPC20, BPC40 and morphine groups compared with that in the control group at 2 h. These increasing thresholds then returned to the levels of the control group. The BPC-157 group showed a much higher threshold at 4 days after incision than the control group. The thresholds of the BPC groups, except the morphine group, were normalized 7 days after incision. The flinching numbers of the BPC10, BPC20, BPC40 and morphine groups were significantly decreased in phase 1, but there was no decrease in the BPC-157 groups except the morphine group in phase 2. Conclusions: BPC-157 was effective only for a short period after incision. It was also effective during phase 1 but not during phase 2, as determined by the formalin test. BPC-157 might have a short antinociceptive effect, even though it has anti-inflammatory and wound healing effects.

Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode

  • Han, Sang-Woo;Park, Sung-Hoon;Kim, Hyun-Seop;Lim, Jongtae;Cho, Chun-Hyung;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.221-225
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    • 2016
  • This paper reports a new method to enable the normally-off operation of AlGaN/GaN heterojunction field-effect transistors (HFETs). A capacitor was connected to the gate input node of a normally-on AlGaN/GaN HFET with a Schottky gate where the Schottky gate acted as a clamping diode. The combination of the capacitor and Schottky gate functioned as a clamp circuit to downshift the input signal to enable the normally-off operation. The normally-off operation with a virtual threshold voltage of 5.3 V was successfully demonstrated with excellent dynamic switching characteristics.

Noise Mitigation for Target Tracking in Wireless Acoustic Sensor Networks

  • Kim An, Youngwon;Yoo, Seong-Moo;An, Changhyuk;Wells, Earl
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.7 no.5
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    • pp.1166-1179
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    • 2013
  • In wireless sensor network (WSN) environments, environmental noises are generated by, for example, small passing animals, crickets chirping or foliage blowing and will interfere target detection if the noises are higher than the sensor threshold value. For accurate tracking by acoustic WSNs, these environmental noises should be filtered out before initiating track. This paper presents the effect of environmental noises on target tracking and proposes a new algorithm for the noise mitigation in acoustic WSNs. We find that our noise mitigation algorithm works well even for targets with sensing range shorter than the sensor separation as well as with longer sensing ranges. It is also found that noise duration at each sensor affects the performance of the algorithm. A detection algorithm is also presented to account for the Doppler effect which is an important consideration for tracking higher-speed ground targets. For tracking, we use the weighted sensor position centroid to represent the target position measurement and use the Kalman filter (KF) for tracking.

Current Increase Effect and Prevention for Electron Trapping at Positive Bias Stress System by Dropping the Nematic Liquid Crystal on the Channel Layer of the a-InGaZnO TFT's

  • Lee, Seung-Hyun;Heo, Young-Woo;Kim, Jeong-Joo;Lee, Joon-Hyung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.163-163
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    • 2015
  • The effect of nematic liquid crystal(5CB-4-Cyano-4'-pentylbiphenyl) on the amorphous indium gallium zinc oxide thin film transistors(a-IGZO TFTs) was investigated. Through dropping the 5CB on the a-IGZO TFT's channel layer which is deposited by RF-magnetron sputtering, properties of a-IGZO TFTs was dramatically improved. When drain bias was induced, 5CB molecules were oriented by Freedericksz transition generating positive charges to one side of dipoles. From increment of the capacitance by orientation of liquid crystals, the drain current was increased, and we analyzed these phenomena mathematically by using MOSFET model. Transfer characteristic showed improvement such as decreasing of subthreshold slope(SS) value 0.4 to 0.2 and 0.45 to 0.25 at linear region and saturation region, respectively. Furthermore, in positive bias system(PBS), prevention effect for electron trapping by 5CB liquid crystal dipoles was observed, which showing decrease of threshold voltage shift [(${\delta}V$]_TH) when induced +20V for 1~1000sec at the gate electrode.

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The Effect of Compressive Residual Stress on Computer Corrosion Fatigue Crack of SAE 5155 (SAE 5155강의 컴퓨터부식피로 균열에 미치는 압축잔류응력의 영향)

  • Park, Sung-Mo;Moon, Kwang-Seok;Park, Kyung-Dong
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.6 no.2
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    • pp.34-40
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    • 2007
  • Antifatigue failure technology take an important part of current industries. Currently, the shot peening is used for removing the defect from the surface of steel and improving the fatigue strength on surface. Therefore, this paper the effect of compressive residual stress and corrosion of spring steel(SAE 5155)by shot-peening on fatigue crack growth characteristics in stress ratio(R=0.05)was investigated with considering fracture mechanics. By using the methods mentioned above, We arrived at the following conclusions. The fatigue crack growth rate(da/dN) of the shot-peening material was lower than that of the un-peening material. And in stage I, ${\Delta}Kth$, the threshold stress intensity factor, of the shot-peen processed material is high in critical parts unlike the un-peening material. Also m, fatigue crack growth exponent and number of cycle of the shot-peening material was higher than that of the un-peening material. That is concluded from effect of da/dN. Finally fracture of shot-peening material and un-peening material was identified and discussed in this study.

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Characteristic of Transient Response in Nonuniform Instability with Optically Controlled Fiber (광학적으로 제어된 섬유를 가진 비균일 불안정성의 과도 응답의 특성)

  • Han, Pan-Lin;Park, Kwang-Chea
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.9 no.5
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    • pp.445-450
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    • 2016
  • In this paper we study the effect of chaos in nonuniform instability with optical fiber based IoT networks. The transient response of optically controlled fiber has also described. Nonlinear optical fiber effects especially fiber scattering in networks has emerged as the essential means active optical devices. The paradigm instability in fiber Internet serves as a test for fundamental study of chaos and its suppression and exploitation in practical application in optical communication. This paper attempts to present a survey and some of our research findings on the nature of chaotic effect on Internet based optical communication. The transient response in optical fiber has been evaluated theoretically by calculating the variation of the scattering function. The lines has used under open ended termination containing optically induced region. The scattered optical waves in a fiber used in optic communications are temporally unstable above certain threshold intensity.

A Study on The Effect of Compressive Residual Stress on fatigue Crack Propagation Behavior of Spying Steel (스프링강의 피로크랙 진전거동에 미치는 압축잔류응력의 영향)

  • Park, Keyoung-Dong;Jung, Chan-Gi
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.27 no.1
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    • pp.200-207
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    • 2003
  • In this paper, the effect of the compressive residual stresses which were obtained under the various shot velocities of shot balls on the fatigue behaviors of a spring steel, were investigated. The examination of CT specimen test were executed with the materials(JISG SUP9) which are being commonly used for the springs of automotive vehicles. As a result, the optimal shot velocity of shot balls were acquired considering the peak values of the compressive residual stresses on the surface of specimen and effect on the speed of the fatigue crack propagation da/dN in stage II and the threshold stress intensity factor range Δ$K_{th}$ in stage I. Also the material constant C and the crack propagation index m in the formula of paris law da/dN= C $({\Delta}K^m)$ were suggested in this work to estimate the dependency on the shot velocity.

Design of Normally-Off AlGaN Heterojunction Field Effect Transistor Based on Polarization Engineering (분극 엔지니어링을 통한 상시불통형 질화알루미늄갈륨 이종접합 전계효과 트랜지스터 설계)

  • Cha, Ho-Young;Sung, Hyuk-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.12
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    • pp.2741-2746
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    • 2012
  • In this study, we propose a novel structure based on AlGaN substrate or buffer layer to implement a normally-off mode transistor that was difficult to be realized by conventional AlGaN/GaN heterojunction structures. The channel under the gate can be selectively depleted by growing an upper AlGaN barrier with a higher Al mole fraction and a top GaN charge elimination layer on AlGaN substrate or buffer layer. The proposed AlGaN heterojunction field effect transistor can achieve a threshold voltage of > 2 V, which is generally required in power device specification.

Three-dimensional Modeling of Transient Enhanced Diffusion (과도 증속 확산(TED)의 3차원 모델링)

  • 이제희;원태영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.6
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    • pp.37-45
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    • 1998
  • In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

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