References
-
B.-R. Park, et al, "High-quality ICPCVD
$SiO_2$ for normally off AlGaN/GaN-on-Si recessed MOSHFETs," IEEE Electron Device Lett., Vol. 34, No. 3, pp. 354-356, Mar. 2013. https://doi.org/10.1109/LED.2012.2236678 - J.-G. Lee, et al., "State-of-the-art AlGaN/GaN-on-Si heterostructure field effect transistors with dual field plates," Appl. Phys. Exp., Vol. 5, No. 6, pp. 066502-066502-3, May. 2012. https://doi.org/10.1143/APEX.5.066502
- F. Medjdoub, et al., "Low on-resistance highbreakdown normally off AlN/GaN/AlGaN DHFET on Si substrate." IEEE Electron Device Lett., Vol. 31, No. 2, pp. 111-113, Feb. 2010. https://doi.org/10.1109/LED.2009.2037719
- W. Chen, et al, "High performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors," Appl. Phys. Lett., Vol. 92, No. 25, p. 253501, Jun. 2008. https://doi.org/10.1063/1.2951615
- Y. Uemoto, et al., "Gate injection transistor (GIT)-A normally-off AlGaN/GaN power transistor using conductivity modulation," IEEE Trans. Electron Devices, Vol. 54, No. 12, pp. 3393-3399, Dec. 2007. https://doi.org/10.1109/TED.2007.908601
- S.-W. Han, et al, "Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metaloxide-semiconductor heterojunction field-effect transistor," Appl. Phys. Exp., Vol. 7, No. 11, p. 111002, Nov. 2014. https://doi.org/10.7567/APEX.7.111002
- X. Zhe, et al, "Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask," IEEE Electron Device Lett., Vol. 35, No. 12, pp. 1197-1199, Dec. 2014. https://doi.org/10.1109/LED.2014.2359986
- X. Huang, et al, "Evaluation and application of 600V GaN HEMT in cascode structure," Applied Power Electronics Conference and Exposition (APEC), pp.1279-1286, 2013.
- S.-W. Han, et al, "AlGaN/GaN Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor Integrated with Clamp Circuit to Enable Normallyoff Operation," IEEE Electron Device Lett., Vol. 36, No. 6, pp. 540-542, Jun. 2015. https://doi.org/10.1109/LED.2015.2427202