• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.887-890
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• 2005

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin updoped Si channel for SCEs control, are being validated for sub-20nm scaling, A channel effects such as the subthreshold swing(SS), and the threshold voltage roll-off(${\Delta}V_{th}$). The propsed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Journal of the Korean institute of surface engineering
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• v.48 no.3
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• pp.105-109
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• 2015

We studied emission characteristics of blue fluorescent multi-tandem OLEDs using $Al/MoO_x$ as charge generation layer(CGL). Threshold voltage for 2, 3, 4, and 5 units tandem OLEDs was 8, 11, 14 and 18 V, respectively. The threshold voltage in multi-tandem OLEDs was lower than multiple of 4 V for the single OLED. Maximum current efficiency and maximum quantum efficiency of single OLED were 7.6 cd/A and 5.5%. Maximum current efficiency for 2, 3, 4, and 5 units tandem OLEDs was 22.6, 31.4, 41.2, and 46.6 cd/A, respectively. Maximum quantum efficiency for 2, 3, 4, and 5 units tandem OLEDs was 11.8, 15.8, 21.8, and 25.6%, respectively. The maximum current efficiency and maximum quantum efficiency in multi-tandem OLEDs were higher than multiple of those for the single OLED. The intensity for 508 nm peak was changed and the peak wavelength was red shift by increase of tandem unit in electroluminescent emission spectra. These phenomena can be caused by micro-cavity effect with increasing of organic layer thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• Transactions of the Korean Society of Automotive Engineers
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• v.12 no.1
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• pp.196-202
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• 2004

The development of new materials with light weight and high strength has become vital to the machinery, aircraft and auto industries. However, there are a lot of problems with developing such materials that require expensive tools, and a great deal of time and effort. Therefore, the improvement of fatigue strength and fatigue life are mainly focused on adopting residual stress(in this thesis). The compressive residual stress was imposed on the surface according to each shot velocity(57, 70, 83, 96 m/sec) based on Shot-peening, which is the method of improving fatigue life and strength. By using the methods mentioned above, the following conclusions have been drawn. 1. The fatigue crack growth rate(da/dN) of the Shot-peened material was lower than that of the Un-peened material. And in stage I, ΔKth, the threshold stress intensity factor, of the shot-peen processed material is high in critical parts unlike the Un-peened material. Also m, fatigue crack growth exponent and number of cycle of the Shot-peened material was higher than that of the Un-peened material. That is concluded from effect of da/dN. 2. Fatigue life shows more improvement in the Shot-peened material than in the Un-peened material. And compressive residual stress of surface on the Shot-peen processed operate resistance force of fatigue crack propagation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.61-62
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• 2006

In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

• Physical Therapy Rehabilitation Science
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• v.9 no.4
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• pp.244-251
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• 2020

Objective: Physical therapy techniques are required for patients with temporomandibular joint disorder (TMD), but the effects of treatment have not been compared. Therefore, effects of transcutaneous electrical nerve stimulation (TENS) and low level laser (LLL), which are most commonly used interventions, were compared. Design: Randomized controlled trial. Methods: Thirty-six participants with pain in the temporomandibular joint were enrolled, and 12 participants were randomly assigned to either the TENS group, LLL group, or placebo group. Each intervention was performed for a total of 6 sessions for 2 weeks. For the evaluation of the participants, the mouth opening (MO), pressure pain threshold (PPT), and stress were measured at three time periods: baseline, post-test, and follow-up at 2 weeks. Results: Significant interaction between groups according to each evaluation point was found only in PPT-masseter (p<0.05). The evaluation time point at which a significant difference appeared was at the post-test and follow-up at 2 weeks time periods. As a result of the post-test, the LLL group showed a significant improvement compared to the TENS group (p<0.05), and at 2 weeks follow-up, the TENS group showed a significant improvement compared to the placebo group (p<0.05). Conclusions: In this study, an experiment was conducted to compare the treatment effects when TENS, LLL, and placebo were given to patients with TMD. In addition, by quantitatively presenting the effect size of each treatment, this study suggests clinical use of TENS and LLL treatment for TMD.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.1
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• pp.69-75
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• 2019

The standard application area of over-sampled discrete wavelet transform is noise removal technology for digital images. Comparing dual density discrete wavelet transform with dual tree discrete wavelet transform, we have almost similar characteristics. In this paper, several discrete wavelet transforms are accomplished on digital image existing with noise, noises are removed with threshold processing algorithm on subband, performance evaluation experiments of the reconstructed images are accomplished. If we decide appropriate threshold value, the effect noise removal is possible. In this paper, we can certified that the suggested algorithm of 3-direction separable processing with 2 dimension dual density discrete wavelet transform is superior to several experiment results.

• The Korean Journal of Health Service Management
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• v.12 no.2
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• pp.89-99
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• 2018

Objectives : To compare the degree of achievement of Universal Health Coverage (UHC) among 39 developing countries in Africa and to investigate the correlation between health care financing and the UHC index. Methods : For data, 14 UHC indexes were used in 2015 supplied by the World Health Organization (WHO). In addition, this study used a 10% of threshold point corresponding to the catastrophic health expenditures and a 25% of threshold points as a health care financing index. Results : It was found that there were significant difference among Least Low Developed Countries (LLDCs), Other Low Income Countries (Other LICs), Lower Middle Income Countiies (LMICs), Upper Middle Income Countires (UMICs) to compare the average value by nation on the UHC index. This study showed that the UHC index of LLDCs was lowest, but the average value was higher as it moved towards LMICs and UMICs. In addition, it was found that there was an average value difference among the groups like LLDCs, Other LICs, LMICs and UMICs. As a result of comparison, it was found that the spending of household health expenditure increased as LLDCs moved towards UMICs when the burden of household health expenditure was 25%. Conclusions : This study aimed to compare the UHC indexes of African nations and to investigate the correlation between the degree of spending of total expenditure on health and burden of household health expenditure and UHC, and its effect.

• International Journal of Naval Architecture and Ocean Engineering
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• v.13 no.1
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• pp.187-193
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• 2021

In order to solve the problem of false terrains caused by environmental interferences and tunneling effect in the conventional multi-beam seafloor terrain detection, this paper proposed a seafloor topography detection method based on fast two-dimensional (2D) Censored Mean Level Detector-statistics Constant False Alarm Rate (CMLD-CFAR) method. The proposed method uses s cross-sliding window. The target occlusion phenomenon that occurs in multi-target environments can be eliminated by censoring some of the large cells of the reference cells, while the remaining reference cells are used to calculate the local threshold. The conventional 2D CMLD-CFAR methods need to estimate the background clutter power level for every pixel, thus increasing the computational burden significantly. In order to overcome this limitation, the proposed method uses a fast algorithm to select the Regions of Interest (ROI) based on a global threshold, while the rest pixels are distinguished as clutter directly. The proposed method is verified by experiments with real multi-beam data. The results show that the proposed method can effectively solve the problem of false terrain in a multi-beam terrain survey and achieve a high detection accuracy.