• Title/Summary/Keyword: threshold effect

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Mechanism and regulation of body malodor generation (1) -Effect of iron in axillary malodor and using an antioxidant as a deodorant-

  • Ichinose, N.;lida, S.;Gomi, T.;Someya, K.;Hirano, K.;Ogura, M.;Yamazaki, S.;Sakurai, K.
    • Proceedings of the SCSK Conference
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    • 2003.09b
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    • pp.139-144
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    • 2003
  • Using GC/MS and GC/Olfactmetry analysis, we identified two vinyl ketones such as 1-Octen-3-one (OEO) and cis-1, 5-Octadien-3-one (ODO) as key materials in axillary odor. OEO and ODO showed a strong metallic odor and low odor threshold. These two materials were occurred from the reaction of unsaturated long fatty acids in lipids and the iron ion in our body's metabolism. Then, it was recognized that Morus alba (Japanese name, Kuwa) extract, one of the plant extract, showed a very good effect to control the generation of these vinyl ketones due to its remarkable anti-oxidization effects.

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Neuropharmacological Activity of Humulus lupulus Extracts

  • Lee, Kang-Mee;Jung, Jun-Sub;Song, Dong-Keun;Kim, Yung-Hi
    • Korean Journal of Pharmacognosy
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    • v.24 no.3
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    • pp.231-234
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    • 1993
  • Neuropharmacological profile of Humulus lupulus (hop) extract was studied in mice. At doses above 100 mg/kg(i.p.), it decreased spontaneous locomotor activity and raised the nociceptive threshold in the hot-plate test. At doses above 250 mg/kg (i.p.), it increased pentobarbital-induced sleeping time and produced muscle relaxant effect. At the dose of 500 mg/kg, anticonvulsive effect against pentylenetetrazole-induced convulsion and hypothermic effect was observed.

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Characteristics of Leg and Ankle in Taxi Drivers

  • Kang, Sun-Young;Choung, Sung-Dae;Jeon, Hye-Seon
    • Physical Therapy Korea
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    • v.21 no.1
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    • pp.55-62
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    • 2014
  • For professional drivers, there is a possibility to have musculoskeletal disorders on ankle joint due to repetitive pedaling operation. Therefore, this study have focused to examine ankle active range of motion (AROM), dorsiflexor strength, and pressure pain threshold (PPT) of tibialis anterior muscle (TA) in taxi drivers compared to a age-matched control group. Thirty male taxi drivers with at least 10 years of driving experience and thirty male sedentary workers were evaluated for ankle AROM, dorsiflexor strength, and PPT of TA. Multiple independent t-tests were used to identify significant differences between two groups. For the results, taxi drivers had significantly less AROM in dorsiflexion and greater AROM in external tibial rotation compared to the control group. Also, dorsiflexor strength and PPT of TA in taxi drivers was significantly lower than in the control group. This study indicates that the repetitive ankle movements associated with driving have an effect on ankle AROM, dorsiflexor strength, and PPT of TA and may lead to work-related musculoskeletal disorders on ankle. Professional drivers may need to be educated to prevent a potential musculoskeletal disorders associated with repetitive movement.

Fabrication of Multi-Fin-Gate GaN HEMTs Using Honeycomb Shaped Nano-Channel (벌집구조의 나노채널을 이용한 다중 Fin-Gate GaN 기반 HEMTs의 제조 공정)

  • Kim, Jeong Jin;Lim, Jong Won;Kang, Dong Min;Bae, Sung Bum;Cha, Ho Young;Yang, Jeon Wook;Lee, Hyeong Seok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.1
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    • pp.16-20
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    • 2020
  • In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

Improvement in Electrical Characteristics of Solution-Processed In-Zn-O Thin-Film Transistors Using a Soft Baking Process (Soft-Baking 처리를 통한 용액 공정형 In-Zn-O 박막 트랜지스터의 전기적 특성 향상)

  • Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.9
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    • pp.566-571
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    • 2017
  • A soft baking process was used to enhance the electrical characteristics of solution-processed indium-zincoxide (IZO) thin-film transistors (TFTs). We demonstrate a stable soft baking process using a hot plate in air to maintain the electrical stability and improve the electrical performance of IZO TFTs. These oxide transistors exhibited good electrical performance; a field-effect mobility of $7.9cm^2/Vs$, threshold voltage of 1.4 V, sub-threshold slope of 0.5 V/dec, and a current on/off ratio of $2.9{\times}10^7$ were measured. To investigate the static response of our solutionprocessed IZO TFTs, simple resistor load type inverters were fabricated by connecting a resistor (5 or $10M{\Omega}$). Our IZO TFTs, which were manufactured using the soft baking process at a baking temperature of $120^{\circ}C$, performed well at the operating voltage, and are therefore a good candidate for use in advanced logic circuits and transparent display backplanes.

Device Coupling Effects of Monolithic 3D Inverters

  • Yu, Yun Seop;Lim, Sung Kyu
    • Journal of information and communication convergence engineering
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    • v.14 no.1
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    • pp.40-44
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    • 2016
  • The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness TILD and dielectric constant εr of the inter-layer distance (ILD), the doping concentration Nd (Na), and length Lg of the channel, and the side-wall length LSW where the stacked FETs are coupled are studied. When Nd (Na) < 1016 cm-3 and LSW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when Nd (Na) > 1016 cm-3 or LSW > 20 nm, the shift decreases and increases, respectively. M3INVs with TILD ≥ 50 nm and εr ≤ 3.9 can neglect the interaction between the stacked FETs, but when TILD or εr do not meet the above conditions, the interaction must be taken into consideration.

Pathogenesis of Enuresis: Brain, Sleep Dysfunction and Psychological Effects (야뇨증의 병태생리: 뇌, 수면장애 그리고 정신적 효과)

  • Park, Kwan-Jin
    • Childhood Kidney Diseases
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    • v.16 no.1
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    • pp.9-14
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    • 2012
  • The relationship between central nervous system (CNS) and enuresis has not been sufficiently elucidated despite the presence of several circumstantial evidences. Contrary to common belief, polysomnographic sleep analysis revealed that the disturbance of arousal rather than deep sleep was responsible for enuresis. Subsequent studies confirmed depressed sympathetic tone and retarded brainstem reflex indicating abnormal arousal threshold in enuretics. In accordance with the bladder-brain dialogue, chronic stimulation of bladder may modify the brainstem function elevating arousal threshold. Epidemiological studies have suggested the association between enuresis and various psychosomatic disorders like attention deficit hyperactivity disorder (ADHD), which has shown the abnormal brainstem reflex similar to enuresis. Taken together, CNS is assumed to play a crucial role in the pathogenesis of enuresis. Psychological assessment is vital to understand the psychodynamic effect of enuresis. Studies have shown that the prevalence of psychological problems was higher in enuretic children and externalization of the symptoms was usually found. Several explanations have been brought up regarding the development of enuresis and psychological problems. Enuresis may cause psychological problems and vice versa. Otherwise, both may be associated with other variables, such as socioeconomic status (SES).

A Study on Dynamic Characteristics of a Rotor-Bearing System Supported by Actively Controlled Fluid Film Journal Bearing (능동 제어 유체 윤활 베어링으로 지지된 축-베어링 시스템의 동특성에 관한 연구)

  • No, Byeong-Hu;Kim, Gyeong-Ung
    • Journal of the Korean Society for Precision Engineering
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    • v.18 no.8
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    • pp.116-121
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    • 2001
  • The paper presents the dynamic characteristics of a rotor-bearing system supported by an actively controlled hydrodynamic journal bearing. The proportional. derivative and integral controls are adopted for the control algorithm to control the hydrodynamic journal bearing with an axial groove. Also, the cavitation algorithm implementing the Jakobsson-Floberg-Olsson boundary condition is adopted to predict cavitation regions in the fluid film more accurately than conventional analysis, which uses the Reynolds condition. The speed at onset of instability of a rotor-bearing system is increased by both proportional and derivative control of the bearing. The proportional control increases the stability threshold without affecting the whirl ratio. However, for the derivative control of the bearing, increase of stability threshold speed is accompanied by a parallel reduction of the whirl ratio. The integral control has no effect on stability characteristics of hydrodynamic journal bearing. The PD-control is more effective than proportional or derivative control. Results 7how the active control of bearing can be adopted for the stability improvement of a rotor-bearing system.

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Simulation of do Performance and Gate Breakdown Characteristics of MgO/GaN MOSFETs (MgO/GaN MOSFETs의 dc 특성 및 Gate Breakdown 특성 Simulation)

  • Cho, Hyeon;Kim, Jin-Gon;Gila, B.P.;Lee, K.P.;Abernathy, C.R.;Pearton, S.J.;Ren, F.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.176-176
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    • 2003
  • The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

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The Effect of Aerobic Exercise Program for Chronic Disease Patients (성인병 환자를 위한 유산소성 운동프로그램의 효과)

  • 최성근
    • Journal of Nutrition and Health
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    • v.28 no.9
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    • pp.904-913
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    • 1995
  • The purpose of this study is to determine the effects of exercise programs on the treatment of chronic diseases. For this purpose, nine middle-aged women suffering from such chronic diseases as obesity, hypertension and coronary heart disease(CHD) were sampled to perform a 4-month-long exercise program which required the lactate threshold(LT) level corresponding to 70% of maximal oxygen uptake(VO2max). Thereupon, their physiques, physical fitness, blood components and physiological varibles were compared pre and post of exercise program. The results were summarized as follows ; 1) After the 4-month-long exercise program, %fat was significantly decreased, while such variables as grip strength, side step, trunk flexion and leg balance were significantly increased. 2) Blood components such as TG, TC, HDL-C, LDL-C, hemoglobin and hematocrit did not show and change in after exercise program. 3) Physiological varables such as HR, SBP, DBP, HR/LT, SBP/LT, DBP/LT, RPE/LT, VE/LT, VO2/LT and VO2 max showed significant increase after 4-month exercise program. These results suggest that regular aerobic exercise in a long period might help to decrease % fat and to increase aerobic capacity in middle-aged women suffering from chronic diseases.

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