Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)

Materials Research Society of Korea (한국재료학회)
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Simulation of do Performance and Gate Breakdown Characteristics of MgO/GaN MOSFETs

MgO/GaN MOSFETs의 dc 특성 및 Gate Breakdown 특성 Simulation

  • Cho, Hyeon (Dept. of Matersials Engineerung, Miryang National University) ;
  • Kim, Jin-Gon (Dept. of Matersials Engineerung, Miryang National University) ;
  • Gila, B.P. (Department of Materials Science and Engineering, University of Florida) ;
  • Lee, K.P. (Department of Materials Science and Engineering, University of Florida) ;
  • Abernathy, C.R. (Department of Materials Science and Engineering, University of Florida) ;
  • Pearton, S.J. (Department of Materials Science and Engineering, University of Florida) ;
  • Ren, F. (Department of Chemical Engineering, University of Florida)
  • 조현 (밀양대학교 신소재공학부) ;
  • 김진곤 (밀양대학교 신소재공학부) ;
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  • Published : 2003.11.01
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Abstract

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

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