• Journal of the Korean Society of Manufacturing Process Engineers
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• v.6 no.1
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• pp.62-70
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• 2007

The development of new materials that are light-weight, yet high in strength has become vital to the machinery, aircraft and auto industries. However, there are a lot of problems with developing such materials that require expensive tools, and a great deal of time and effort. Therefore, the improvement of fatigue strength and fatigue life are mainly focused on by adopting residual stress. The fatigue crack growth rate of the Shot-peened material was lower than that of the Un-peened material. And in stage I, threshold stress intensity factor of the shot-peen processed material is high in critical parts unlike the Un-peened material. Also, fatigue crack growth exponent and number of cycle of the Shot-peened material was higher than that of the Un-peened material. That is concluded from effect of da/dN. And Fatigue life shows more improvement in the Shot-peened material than in the Un-peened material. And compressive residual stress of surface on the Shot-peen processed operate resistance force of fatigue crack propagation.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.105-110
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• 2013

We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.7-11
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• 2000

a-Si:H and poly-Si TFT(thin film transistor) characteristics were investigated using an inverted staggered type TFT. The TFT an as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. The poly-Si films were achieved by using an isothermal and RTA treatment for glow discharge deposited a-Si:H films. The a-Si:H films were cystallized at the various temperature from 600$^{\circ}C$ to 1000$^{\circ}C$. As anneal temperature was elevated, the TFT exhibited increased g$\sub$m/ and reduced V$\sub$ds/. V$\sub$T/. The poly-Si grain boundary passivation with grain boundary trap types and activation energies as a function of anneal temperature. The poly-si TFT showed an improved I$\sub$nm//I$\sub$off/ ratio of 10$\^$6/, reduced gate threshold voltage, and increased field effect mobility by three orders.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.292-294
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• 2016

이황화몰리브덴을 활용한 전계효과트랜지스터(Field Effect Transistor)는 채널 물질의 우수한 특성으로 차세대 저전력 고성능 스위치와 광전소자로 주목받고있다. Underlap 게이트 구조에서 게이트 길이(L_G), 절연체 두께(T), 절연체 상대유전율(${\varepsilon}_r$)에 따라 변화하는 소자특성을 분석하여 저전력 고성능 $MoS_2$ 전계효과트랜지스터를 위한 게이트 구조 최적화방법을 모색하였다. EDISON simulator 중 Tight-binding NEGF 기반 TMD FET 소자 성능 및 특성 해석용 S/W를 활용하여 게이트 구조에 따른 게이트 전압 - 드레인 전류 상관관계(transfer characteristic)를 얻고, Y-function method를 이용하여 채널 유효전하이동도(Effective Mobility), Sub-threshold Swing, on/off 전류비(on/off current ratio)를 추출하여 비교 분석하였다. 시뮬레이션으로 추출한 소자의 최대 채널 유효전하이동도는 $37cm^2V^{-1}s^{-1}$, on/off 전류비는 $10^4{\sim}10^5$, Sub-threshold Swing은 ~38mV/dec 수준을 보였다.

• Journal of Sensor Science and Technology
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• v.28 no.5
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• pp.329-333
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• 2019

Solution-processed oxide thin-film transistors (TFTs) have garnered great attention, owing to their many advantages, such as low-cost, large area available for fabrication, mechanical flexibility, and optical transparency. Negative bias stress (NBS)-induced instability of sol-gel IGZO TFTs is one of the biggest concerns arising in practical applications. Thus, understanding the bias stress effect on the electrical properties of sol-gel IGZO TFTs and proposing an effective recovery method for negative bias stressed TFTs is required. In this study, we investigated the variation of transfer characteristics and the corresponding electrical parameters of sol-gel IGZO TFTs caused by NBS and positive bias recovery (PBR). Furthermore, we proposed an effective PBR method for the recovery of negative bias stressed sol-gel IGZO TFTs. The threshold voltage and field-effect mobility were affected by NBS and PBR, while current on/off ratio and sub-threshold swing were not significantly affected. The transfer characteristic of negative bias stressed IGZO TFTs increased in the positive direction after applying PBR with a negative drain voltage, compared to PBR with a positive drain voltage or a drain voltage of 0 V. These results are expected to contribute to the reduction of recovery time of negative bias stressed sol-gel IGZO TFTs.

• The Korean Journal of Pain
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• v.35 no.1
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• pp.59-65
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• 2022

Background: There is still unmet need in treating neuropathic pain and increasing awareness regarding the use of drug combinations to increase the effectiveness of treatment and reduce adverse effects in patients with neuropathic pain. Methods: This study was performed to determine the individual and combined effects of pregabalin, tianeptine, and clopidogrel in a rat model of neuropathic pain. The model was created by ligation of the L5-L6 spinal nerve in male Sprague-Dawley rats; mechanical allodynia was confirmed using von Frey filaments. Drugs were administered to the intrathecal space and mechanical allodynia was assessed; drug interactions were estimated by isobolographic or fixed-dose analyses. Results: Intrathecal pregabalin and tianeptine increased the mechanical withdrawal threshold in a dose-dependent manner, but intrathecal clopidogrel had little effect on the mechanical withdrawal threshold. An additive effect was noted between pregabalin and tianeptine, but not between pregabalin and clopidogrel. Conclusions: These findings suggest that intrathecal coadministration of pregabalin and tianeptine effectively attenuated mechanical allodynia in the rat model of neuropathic pain. Thus, pregabalin plus tianeptine may be a valid option to enhance the efficacy of neuropathic pain treatment.

• The Korean Journal of Pain
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• v.23 no.4
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• pp.230-235
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• 2010

Background: Bone cancer pain has a disruptive effect on the cancer patient's quality of life. Although ginsenosides have been used as traditional medicine in Eastern Medicine, the effect on bone cancer pain has not been throughly studied. The aim of this study was to determine whether ginsenosides may alter the bone cancer pain at the spinal level. Methods: NCTC 2472 tumor cells ($2.5{\times}10^5$) were injected into the femur of adult male C3H/HeJ mice to evoke bone tumor and bone cancer pain. To develop bone tumor, radiologic pictures were obtained. To assess pain, the withdrawal thereshold was measured by applying a von Frey filament to the tumor cells inoculation site. The effect of intrathecal ginsenosides was investigated. Effect of ginsenosides (150, 500, $1,000{\mu}g$) was examined at 15, 30, 60, 90, 120 min after intrathecal delivery. Results: The intrafemoral injection of NCTC 2472 tumor cells induced a radiological bone tumor. The withdrawal threshold with tumor development was significantly decreased compared to the sham animals. Intrathecal ginsenosides effectively increased the withdrawal threshold in the bone cancer site. Conclusions: NCTC 2472 tumor cells injection into the mice femur caused bone tumor and bone cancer pain. Intrathecal ginsenosides attenuated the bone cancer-related pain behavior. Therefore, spinal ginsenosides may be an alternative analgesic for treating bone cancer pain.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2002.10a
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• pp.341-346
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• 2002

In this study, an effect that compressive residual stress formed by shot-peening the surface of spring steel(JISG SUP-9) at each shot velocity(1800, 2200, 2600, 3000rpm) on the fatigue crack growth property and threshold stress intensity factor, ${\Delta}K_{th}$, was examined. Followings are the result (1) Compressive residual stress on surface of specimen was determined at each -601 MPa(1800rpm), -638 MPa(2200rpm), -587 MPa (2600rpm), -550 MPa(3000rpm) by shot velocity of shot peening and threshold stress intensity factor, ${\Delta}K_{th}$, fatigue crack growth rate, da/dN, on fatigue crack growth is obstructed by the compressive residual stress was determined at each $5.619\;MPa\sqrt{m}$(Un-peening), $8.319\;MPa\sqrt{m}$(1800rpm), $8.797\;MPa\sqrt{m}$(2200rpm), $7.835\;MPa\sqrt{m}$(2600rpm), $7.352\;MPa\sqrt{m}$(3000rpm) (2) Existing compressive residual stress by effect of shot velocity of shot-peening on relation of crack length. a, and number of cycle, N, was 2 times progressed in case of 2200rpm than specimen of Un-peening on fatigue life. And fatigue life was 1.6 times progressed incase of 3000rpm by Over peening. (3) Fatigue life of Material on Paris' law, $da/dN=C({\Delta}K)^m$, that effect of material constant, C, and fatigue crack growth exponent, m, was influenced by effect of. C and m.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.399-405
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• 2018

We report the fabrication of organic field-effect transistors (OFETs) via spray coating of electrochemically exfoliated graphene (EEG) and conducting polymer hybrid as electrodes. To reduce the roughness and sheet resistance of the EEG electrodes, subsequent coating of conducting polymer (poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)) and acid treatment was performed. After that, active channel layer was developed by spin coating of semiconducting poly(3-hexylthiophene) on the hybrid electrodes to define the bottom gate bottom contact configuration. The OFET devices with the EEG/PEDOT:PSS hybrid electrodes showed a reasonable electrical performances (field effect mobility = $0.15cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^2$, and threshold voltage = -1.57V). Furthermore, the flexible OFET devices based on the Polydimethlsiloxane (PDMS) substrate and ion gel dielectric layer exhibited higher electrical performances (field effect mobility = $6.32cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^3$, and threshold voltage = -1.06V) and excellent electrical stability until 1000 cycles of bending test, which means that the hybrid electrode is applicable to various organic electronic devices, such as flexible OFETs, supercapacitors, organic sensors, and actuators.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.3
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• pp.334-340
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• 2019

Objective: The objective of this study was to investigate the genetic components of daily milk yield and to re-rank bulls in South Korea by estimated breeding value (EBV) under heat stress using the temperature-humidity index (THI). Methods: This study was conducted using 125,312 monthly test-day records, collected from January 2000 to February 2017 for 19,889 Holstein cows from 647 farms in South Korea. Milk production data were collected from two agencies, the Dairy Cattle Genetic Improvement Center and the Korea Animal Improvement Association, and meteorological data were obtained from 41 regional weather stations using the Automated Surface Observing System (ASOS) installed throughout South Korea. A random regression model using the THI was applied to estimate genetic parameters of heat tolerance based on the test-day records. The model included herd-year-season, calving age, and days-in-milk as fixed effects, as well as heat tolerance as an additive genetic effect, permanent environmental effect, and direct additive and permanent environmental effect. Results: Below the THI threshold (${\leq}72$; no heat stress), the variance in heat tolerance was zero. However, the heat tolerance variance began to increase as THI exceeded the threshold. The covariance between the genetic additive effect and the heat tolerance effect was -0.33. Heritability estimates of milk yield ranged from 0.111 to 0.176 (average: 0.128). Heritability decreased slightly as THI increased, and began to increase at a THI of 79. The predicted bull EBV ranking varied with THI. Conclusion: We conclude that genetic evaluation using the THI function could be useful for selecting bulls for heat tolerance in South Korea.