• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.129-130
• /
• 2008

Polycrystalline silicon (poly-Si) Schottky barrier thin film transistors (SB-TFT) are fabricated by erbium silicided source/drain for n-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs have a large on/off current ratio with a low leakage current. Moreover, the electrical characteristics of poly-Si SB TFTs are significantly improved by the additional forming gas annealing in 2 % $H_2/N_2$, because the interface trap states at the poly-Si grain boundaries and at the gate oxide/poly-Si channel decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.6
• /
• pp.462-465
• /
• 2009

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.170-170
• /
• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Progress in Superconductivity and Cryogenics
• /
• v.5 no.2
• /
• pp.41-45
• /
• 2003

Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

• Journal of Sensor Science and Technology
• /
• v.17 no.5
• /
• pp.329-337
• /
• 2008

Simple, small and portable oxygen sensors were fabricated by tape casting technique. Yttria stabilized zirconia containing cordierite ceramics (YSZC) were used as a porous diffused layer of oxygen in pumping cell. Yttria stabilized zirconia (YSZ) solid electrolyte, YSZC porous diffusion layer and heater-patterned ceramic sheets were prepared by co- firing method. Limit current characteristics and the linear relationship of current to oxygen concentration were observed. Viscosity variation of the slurries both YSZ and YSZC showed a similar behavior, but micro pores in the fired sheet were increased with increasing of the cordierite amount. Molecular diffusion was dominated due to the formation of large pores in porous diffusion layer. The plateau range of limit current in porous-type oxygen sensor was narrow than the one of aperture-type oxygen sensor. However limit current curve was appeared in porous-type oxygen sensor even at the lower applied voltage. The plateau range of limit-current was widen as increasing the thickness of porous diffusion layer of the YSZ containing cordierite. Measuring temperature of $600{\sim}650^{\circ}C$ was recommended for limit-current oxygen sensor. Porous diffusion layer-type oxygen sensor showed faster response than the aperture-type one and was stable up to 30 days running without any crack at interface between the layers.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.4
• /
• pp.192-195
• /
• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.2
• /
• pp.17-21
• /
• 2017

Horizontal thin-film thermoelectric cooler has been simulated using a commercial software (ANSYS Workbench Thermal-electric). The thermoelectric cooler consists of thin-film n-type $Bi_2Te_3$, p-type $Sb_2Te_3$ thermoelectric elements, and Au electrode, respectively. The hot spot was placed under the center of device which represents Joule heating. Numerical analysis was conducted by geometric variable, and a maximum temperature difference of $13^{\circ}C$ was obtained. As from the simulation parameters, we presented an optimized design for high efficiency cooling.

• Journal of the Korean Applied Science and Technology
• /
• v.29 no.2
• /
• pp.199-204
• /
• 2012

Organic thin-film transistors (OTFTs) have received considerable attention because their potential applications for nano-scale thin-film structures have been widely researched for large-scale integration industries, such as semiconductors and displays. However, research in developing n-type materials and devices has been relatively shortage than developing p-type materials. Therefore, we report on the fabrication of top-contact [6,6]-phenyl-C61-butyricacidmethylester (PCBM) TFTs by using three different solvent, o-dichlorobenzene, toluene and chloroform. An appropriate choice of solvent shows that the electrical characteristics of PCBM TFTs can be improved. Moreover, our PCBM TFTs with the cross-linked Poly(4-vinylphenol) dielectric layer exhibits the most pronounced improvements in terms of the field-effect mobility (${\sim}0.034cm^2/Vs$) and the on/off current ratio (${\sim}1.3{\times}10^5$) for our results. From these results, it can be concluded that solvent-modification of an organic semiconductor in PCBM TFTs is useful and can be extended to further investigations on the PCBM TFTs having polymeric gate dielectrics. It is expected that process optimizations using solution-processing of organic semiconductor materials will allow the development of the n-type organic TFTs for low-cost electronics and various electronic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.87-88
• /
• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TFTs performance. Transfer characteristics of p-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of 2-30 ${\mu}m$ has been investigated. In this paper, we analyzed the data of p-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current ($I_{DSAT}$), and transconductance ($g_m$) of p-channel poly-Si thin film transistors with various channel lengths and widths.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.98-98
• /
• 1999

Highly transparent and conducting tin-doped indium oxide (ITO) films were deposited on polycarbonate substrate by ion-assited deposition. Low substrate temperature (<10$0^{\circ}C$) was maintained during deposition to prevent the polycarbonate substrate from be deformed. The influence of ion beam energy, ion current density, and tin doping, on the structural, electrical and optical properties of deposited films was investigated. Indium oxide and tin-doped indium oxide (9 wt% SnO2) sources were evaporated with assisting ionized oxygen in high vacuum chamber at a pressure of 2$\times$10-5 torr and deposition temperature was varied from room temperature to 10$0^{\circ}C$. Oxygen gas was ionized and accelerated by cold hallow-cathode type ion gun at oxygen flow rate of 1 sccm(ml/min). Ion bea potential and ion current of oxygen ions was changed from 0 to 700 V and from 0.54 to 1.62 $\mu$A. The change of microstructure of deposited films was examined by XRD and SEM. The electrical resistivity and optical transmittance were measured by four-point porbe and conventional spectrophotometer. From the results of spectrophotometer, both the refractive index and the extinction coefficient were derived.