Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Schottky Barrier Thin Film Transistor by using Platinum-silicided Source and Drain

플레티늄-실리사이드를 이용한 쇼트키 장벽 다결정 박막 트랜지스터

  • 신진욱 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 이영희 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Published : 2009.06.01
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Abstract

Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method, The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than 10), Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

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References

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