Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.87-88
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- 2006
Characterization of channel length and width of p channel poly-Si thin film transistors
P channel poly-Si TFT의 길이와 두께에 관한 특성
- Lee, Jeoung-In (School of Information and Communication Enginnering, Sungkyunkwon University) ;
- Hwang, Sung-Hyun (School of Information and Communication Enginnering, Sungkyunkwon University) ;
-
Jung, Sung-Wook
(School of Information and Communication Enginnering, Sungkyunkwon University) ;
-
Jang, Kyung-Soo
(School of Information and Communication Enginnering, Sungkyunkwon University) ;
- Lee, Kwang-Soo (School of Information and Communication Enginnering, Sungkyunkwon University) ;
- Chung, Ho-Kyoon (SAMSUNG SDI CO., LTD) ;
-
Choi, Byoung-Deog
(SAMSUNG SDI CO., LTD) ;
- Lee, Ki-Yong (SAMSUNG SDI CO., LTD) ;
-
Yi, Jun-Sin
(School of Information and Communication Engineering, Sungkyunkwon University)
- 이정인 (성균관대학교 정보통신소자연구실) ;
- 황성현 (성균관대학교 정보통신소자연구실) ;
-
정성욱
(성균관대학교 정보통신소자연구실) ;
-
장경수
(성균관대학교 정보통신소자연구실) ;
- 이광수 (성균관대학교 정보통신소자연구실) ;
- 정호균 (삼성 SDI) ;
-
최병덕
(삼성 SDI) ;
- 이기용 (삼성 SDI) ;
-
이준신
(성균관대학교 정보통신소자연구실)
- Published : 2010.04.01
Abstract
Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TFTs performance. Transfer characteristics of p-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of 2-30
Keywords
- Poly-Si thin-film transistor;
- Threshold voltage;
- On/off current ratio;
- Saturation current;
- Transconductance