• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.572-575
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• 2008

Photo leakage characteristics of a-Si:H TFT were obtained for the illuminations from various backlight sources and the results were compared and analyzed in terms of the photoelectric properties of light. The analysis shows that the photocurrents are related to the wavelengths of the peak intensities of the spectrums of light sources.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.211-213
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• 2008

The TFTs from ZnO semiconductor with hafnium oxide dielectrics were prepared by atomic layer deposition to characterize the electrical properties. Good electrical properties of oxide TFT was obtained with channel mobility of $2.1\;cm^2/Vs$, threshold voltage of 0 V, the subthreshold slope of 0.9 V/dec, and on to off current ratio of $10^6$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1791-1794
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• 2006

For system-on-glass (SoG) with low-temperature poly-silicon (LTPS) thin film transistor (TFT), a new system interface architecture and timing controller are developed. With the newly developed system interface architecture, line memory can be eliminated which would take large area of SoG display panel. The system interface and timing controller are targeted for the application for 6-bit gray scale, 60-frames/s qVGA format.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1349-1351
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• 1997

TFT2DS was utilized to provide the usefulness as an analytic and design tool. In this paper, the general effects of channel length of an inverted staggered amorphous silicon thin film transistor on its characteristics were investigated. The results obtained from these experiments would be adopted to the optimized device designs and advanced simulations of their electrical properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.322-325
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• 2009

Amorphous oxide semiconductors (AOSs) are expected as new channel materials in TFTs for largearea and/or flexible FPDs, and several prototype displays have been demonstrated in these five years since the first report of AOS TFT. In this paper, we review fundamental materials science of AOSs that have been clarified to date in connection with operation characteristics of AOS TFTs.

• Journal of the Korean Society of Radiology
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• v.17 no.4
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• pp.625-631
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• 2023

The important requirement of industrial dynamic X-ray detector operating under high tube voltage up to 450 kVp for 24 hours and 7 days is to obtain significantly high radiation resistance. This study presents the radiation resistance characteristics of various thin film transistors (TFTs) with a-Si, poly-Si and IGZO semiconducting layers. IGZO TFT offering dozens of times higher field effect mobility than a-Si TFT was processed with highly hydrogenated plasma in between IGZO semiconducting layer and inter-layered dielectric. The hydrogenated IGZO TFT showed most sustainable radiation resistance up to 10,000Gy accumulated, thus, concluded that it is a sole switching device in X-ray imaging sensor offering dynamic X-ray imaging at high frame rate under extremely severe radiation environment such as automated X-ray inspection.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Bulletin of the Korean Chemical Society
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• v.28 no.11
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• pp.1945-1950
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• 2007

Two fluorene-based conjugated copolymers containing hexyl-thiophene derivatives, PF-1T and PF-4T, were synthesized via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weights (Mn) of PF-1T and PF-4T were found to be 19,100 and 13,200, respectively. These polymers were soluble in common organic solvents such as chloroform, chlorobenzene, toluene, etc. The UV-vis absorption maximum peaks of PF-1T and PF-4T in the film state were found to be 410 nm and 431 nm, respectively. Electrochemical characterization revealed that these polymers have low highest occupied molecular orbital (HOMO) levels, indicating good resistance against oxidative doping. Thin film transistor devices were fabricated using the top contact geometry. PF-1T showed much better thin-film transistor performance than PF-4T. A thin film of PF- 1T gave a saturation mobility of 0.001-0.003 cm2 V?1 s?1, an on/off ratio of 1.0 × 105, and a small threshold voltage of ?8.3 V. To support TFT performance, we carried out DSC, AFM, and XRD measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.364-364
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• 2012

평판 디스플레이 분야에 투명 비정질 산화물 반도체는 박막 트렌지스터(Thin film transistor; TFT)소자의 채널층으로 사용할 수 있다. 투명 비정질 산화물 반도체 IGZO (In-Ga-Zn-O)는 다른 비정질 재료에 비해 높은 전하 이동도를 가지기 때문에 우수한 성능의 TFT소자를 제작할 수 있다. 본 연구에서는 RF magnetron sputtering법으로 corning 1737 유리기판 위에 RF 파워의 변화에 따라 증착한 IGZO박막의 광학적 전기적 특성 변화를 연구하였다. 박막 증착 조건은 초기 압력 $2.0{\times}10^{-6}Torr$, 증착 압력 $2.0{\times}10^{-2}Torr$, 반응가스 Ar 25 sccm, 증착 온도는 실온으로 고정하였으며, 공정변수로 RF 파워를 25 w, 50 w, 75 w, 100 w로 변화시키며, IGZO 타겟은 $In_2O_3$, $Ga_2O_3$, ZnO 분말을 각각 1 : 1 : 2mol% 조성비로 혼합하여 소결한 타겟을 사용하였다. 표면분석(AFM)결과 RF 파워가 증가함에 따라 거칠기가 증가하였으며, XRD 분석결과 Bragg's 법칙을 만족하는 피크가 나타나지 않는 비정질 구조임을 확인할 수 있었다. 가시광 영역에서 (450~700 nm) 25 w일 때 85% 이상을 확인하였고, RF 파워가 증가할수록 밴드갭이 감소하는 것을 확인하였다. RF 파워가 100 w인 경우 carrier 밀도는 $7.7{\times}10^{19}cm^{-3}$, Mobility $8.42cm^2V-s$, Resistivity $9.45{\times}10^{-3}{\Omega}-cm$로 투명 전도막의 특성을 보였다.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.34-35
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• 2006

Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.