Amorphous Oxide Semiconductor: Factors Determining TFT Performance and Stability

  • Kamiya, Toshio (Materials and Structures Laboratory, Tokyo Inst. Tech.) ;
  • Nomura, Kenji (ERATO-SORST, Japan Science and Technology Agency) ;
  • Hosono, Hideo (Materials and Structures Laboratory, Tokyo Inst. Tech.)
  • Published : 2009.10.12

Abstract

Amorphous oxide semiconductors (AOSs) are expected as new channel materials in TFTs for largearea and/or flexible FPDs, and several prototype displays have been demonstrated in these five years since the first report of AOS TFT. In this paper, we review fundamental materials science of AOSs that have been clarified to date in connection with operation characteristics of AOS TFTs.

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