• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.37-38
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• 2000

The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.149-150
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• 2000

Lead-doped calcium sulfide(CaS:Pb) thin film electroluminescent devices were deposited using atomic layer deposition(ALD). CaS:Pb is a very promising blue phosphor showing very high luminance and the color coordinate close to the blue of cathode ray tube. The luminance, $L_{25}$, of CaS:Pb(1.6 mol.%) EL device was higher than 80 $cd/cm^2$ at a driving frequency of 60Hz. The color coordinates of blue EL emission of CaS:Pb deposited by ALD are consistent with the Pb concentration ranging from approximately 0.5 to 3 mol.%.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.63-71
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• 1997

The thin-film eletroluminescent (TFEL) device having the stacked structure of ZnS:Mn/$ZnS:TbF_{3}$ has been fabricated. Insulate layers used (Pb,La)$TiO_{3}$ and $SiO_{2}$ thin films. The emission color was white. The TFEL device employing ZnS:Mn/$ZnS:TbF_{3}(8000{\AA})$ stacked phosphor layers showed the threshold voltage of $78V_{rms}$. And the brightness of the TFEL device was $400{\mu}W/cm^{2}$ at the applied voltage of $100V_{rms}$. The emission spectrum of TFEL device had a wavelength from 450nm to 620nm. The manufactured devices can be a practical use as a TFEL devices of red, green and blue by using the color filters.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.118-123
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• 2002

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition technique on $Al_2O_3$(0001) substrates at a substrate temperature of $550^{\circ}C$ with various oxygen pressures 100, 200 and 300 mTorr. The films grown under different growth oxygen pressures have been characterized using microstructural and luminescent measurements. The different photoluminescence (PL) characteristics with the increase in oxygen pressures may result from the change of the crystallinity and the composition ratio of Zn and Ga in the films. The luminescent spectra show a broad band extending from 300 to 600 nm peaking at 460 nm. The PL brightness data obtained from the $ZnGa_2O_4$ films grown under optimized conditions have indicated that the sapphire is a promising substrate for the growth of high quality $ZnGa_2O_4$ thin film phosphor.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.133-137
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• 2004

The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.271-274
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• 1999

In this paper, we studied the matrix type Powder AC Electroluminescence using ZnS:Cu,Cl Phosphor. Previously, Powder AC EL was used in Backlighting of LCD. Rescently, organic Thin Film EL was rapidly developed because of high Luminescence and low applied voltage. But Powder AC EL has Superior features that include sheet like flexibility thickness, low weight, self-emission, a wide viewing angle and a fast response time. We tried to change of phosphor thickness and binder mixture rate in order to obtain the good condition of powder AC EL and we obtained the very low breakdown voltage that was just 15V. Till now, we measured the current-voltage(V-I), luminance-voltage(V-L), Luminance-current (L-I), color coordinate (CIE), and phosphor Intensity of variable thickness. In experiment result, the devices has the luminance of 840 cd/$m^2$ and improved color coordinate, x=0.1557, y=0.2145, using a 10kHz drive frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.111-114
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• 2003

Compared to a conventional atomic layer deposition (ALD) grown Al203 film, Plasma enhanced ALD (PEALD) grown AION film was revealed to possess a large breakdown field, which is necessary for stable operation of thin film electroluminescent (TFEL) device. Also, AION is more stable than Al203 films grown by PEALD or by ALD after post-annealing process, which is inevitably required to improve luminance property of phosphor. Furthermore, AION films were applied to insulators of ZnS:Tb TFEL device. Resultant1y, they show better stability than ALD grown insulators under high electric field.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.50-56
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• 2013

Phosphorescent materials coated with titanium dioxide were fabricated and photocatalytic reactions between these materials and VOCs gases were examined. A thin film (approx. 100 nm) of nanosized $TiO_2$ was deposited on the $Sr_4Al_{14}O_{25}$ : $Eu^{2+}$, $Dy^{3+}$, $Ag^+$ phosphor using low-pressure chemical vapor deposition (LPCVD). The characteristics of the photocatalytic reaction were examined in terms of the decomposition of benzene gas using a gas chromatography (GC) system under ultraviolet (${\lambda}$ = 365 nm) and visible light (${\lambda}$ > 420 nm) irradiation. $TiO_2$-coated $Sr_4Al_{14}O_{25}$ : $Eu^{2+}$, $Dy^{3+}$, $Ag^+$ phosphor showed different photocatalytic behavior compared with pure $TiO_2$. $TiO_2$-coated phosphorescent materials showed a much faster photocatalytic decomposition of benzene gas under visible irradiation compared to the pure $TiO_2$ for which the result was practically negligible. This suggests that the extension of the absorption wavelength to visible light occurred through energy band bending by a heterojunction at the interface of the $Sr_4Al_{14}O_{25}-TiO_2$ composite. Also, the $Sr_4Al_{14}O_{25}-TiO_2$ composite showed the photocatalytic decomposition of benzene in darkness due to the photon light emitted from the $Sr_4Al_{14}O_{25}$ phosphors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1062-1065
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• 2004

The importance of display is becoming increasingly important due to the development of information and industry where it leads to diverse and abundant information in today's society. The demand and application range for FPD(Flat Panel Display), specifically represented by LCD(Liquid Crystal Display) and PDP(Plasma Display Panel), have been rapidly growing for its outstanding performance and convenience amongst many other forms of display. The current focus has been on OLED(Organic Light Emitting Diode) in the mobile form, which has just entered into mass production amid the different types of FPD. Many studies are being conducted in regards to device, vacuum evaporation, encapsulation, and drive circuits with the development of device as a matter of the utmost concern. This study develops a new type of light-emitting materials by synthesizing medical polymer organic chitosan and phosphor material CuS. Chitosan itself satisfies the Pool-Frenkel Effect, an I-V specific curve, with a thin film under $20{mu}m$, and demonstrates production possibility for a living body sensors solely with the thin film. Furthermore, it enables production possibility for EML of organic EL device(Emitting Layer) with liquid Green light emitting and Blue light emitting as a result of synthesis with phosphor material.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.284-285
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• 2003

Significant research interest in the growth and characterization of $Y_2$O$_3$：Eu$^{3+}$ thin films has been shown over the last few years because of the promise for applications of display devices. Although an Eu-doped oxysulfide (Eu： $Y_2$O$_2$S) which has an efficiency of 13％ has been used for a traditional cathode ray tube (CRT) red phosphor, the sulfide system is known to degrade rapidly under the high current densities needed for field-emission display (FED) technology. (omitted)d)