Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Fabrication and characteristics of TFEL device using phosphor layer ZnS:Mn/$ZnS:TbF_{3}$ slatted structure

ZnS:Mn/$ZnS:TbF_{3}$ 적층구조의 형광층을 이용한 TFEL소자의 제작 및 그 특성

  • Park, Kyung-Vin (Dept. of Electronics, Kyungpook National University) ;
  • Kim, H.W. (Dept. of Electronics, Kyungpook National University) ;
  • Bae, S.C. (Dept. of Electronics, Kyungpook National University) ;
  • Kim, Y.J. (Dept. of Electronics, Kyungpook National University) ;
  • Cho, K.H. (Siltron Co., Ltd.) ;
  • Kim, K.W. (Dept. of Electronics, Kyungpook National University)
  • Published : 1997.01.31
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Abstract

The thin-film eletroluminescent (TFEL) device having the stacked structure of ZnS:Mn/$ZnS:TbF_{3}$ has been fabricated. Insulate layers used (Pb,La)$TiO_{3}$ and $SiO_{2}$ thin films. The emission color was white. The TFEL device employing ZnS:Mn/$ZnS:TbF_{3}(8000{\AA})$ stacked phosphor layers showed the threshold voltage of $78V_{rms}$. And the brightness of the TFEL device was $400{\mu}W/cm^{2}$ at the applied voltage of $100V_{rms}$. The emission spectrum of TFEL device had a wavelength from 450nm to 620nm. The manufactured devices can be a practical use as a TFEL devices of red, green and blue by using the color filters.

ZnS:Mn/$ZnS:TbF_{3}$적층구조의 TFEL(thin-film eletroluminescent)소자를 제작하였으며, 이때 절연층으로 (Pb,La)$TiO_{3}$(이하PLT)와 $SiO_{2}$박막을 이용하였다. TFEL소자는 $78V_{rms}$의 문턱전압과 $100V_{rms}$의 인가전압에서 $400{\mu}W/cm^{2}$의 휘도를 나타내었다. TFEL소자의 발광스펙트럼은 450nm에서 630nm사이의 파장대를 보이고 있다. 제작된 TFEL소자는 컬러필터를 병용함으로서, 적 녹 청의 색상을 구현하는 TFEL소자로 활용할 수 있다.

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