• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.440-443
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• 2008

Plume radiation has been measured during ground tests of KSLV-I kick motor in order to predict the thermal load on the equipment around the kick motor at flight. The measuring positions are the kick motor base, and the measured heats were about 2${\sim}$5 w/cm$^2$. The measured heat showed a lot of shot fluctuation in their values, and the radiative heats at the latter half of time are higher than those of the first half. A plausible explanation for these phenomena was given as the variation of alumina particles with time. The radiative heats along the plume axis were also measured recently at 8 positions with 1.5m radius from plume axis, but only the initial parts of the results could be acceptable because the sensor were damaged by the accumulated heat. The strongest heat occurred at the middle of the plume, which can be explained with different view factors. Despite of the plausible explanation, it seems to need more analysis because the plume structure such as temperature, alumina particle, after burning has not been revealed until yet. The measure heat flux has been reflected in the prediction of the plume radiation at high altitude where the kick motor operates.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.315.2-315.2
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• 2014

Pt-functionalized ZnS nanowires were synthesized on Au-deposited c-plane sapphire substrates by thermal evaporation of ZnS powders followed by wet Pt coating and annealing. The $NO_2$ gas sensing properties of multiple-networked Pt-functionalized ZnS nanowire sensors were examined. Scanning electron microscopy showed the nanowires with diameters of 20-80 nm. Transmission electron microscopy and X-ray diffraction showed that the nanowires were wurtzite-structured ZnS single crystals. The Pt-functionalized ZnS nanowire sensors showed enhanced sensing performance to $NO_2$ gas at $150^{\circ}C$ compared to pristine ZnS nanowire sensors. Pristine and Pt-functionalized ZnS nanowire sensors showed responses of 140-211% and 207-488%, respectively, to 1-5 ppm $NO_2$, which are better than or comparable to those of many oxide semiconductor sensors. In addition, the underlying mechanism of the enhancement of the sensing properties of ZnS nanowires by Pt functionalization is discussed.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.165-172
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• 1992

To determine the effect of additions of trivalent and pentavalent ions on the electrical conductivity and sensing behaviour, indium and antimony were incorporated in tin oxide by the coprecipitation method. Antimony may be considered to enter the cassiterite structure as pentavalent ions, thermal energy could excite electrons from these ions into the conduction band. Similarly the indium ions would enter the lattice as $In^{3+}$ but could accept electrons from the valence band, thereby becoming monovalent or divalent. These phenomena, however, how the potential barrier existing $SnO_{2}$ by addition of two kinds of ions could influence on the sensing behaviour in comparison with their influence on the resistivity were observed.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.301-306
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• 2009

This paper describes the design and fabrication of 16$\times$16 microbolometer infrared focal plane arrays based on iMEMS technology. Amorphous silicon was used for infrared-sensitive material, and it showed the resistance of 18 Mohm and the temperature coefficient of resistivity of -2.4 %. The fabricated sensors exhibited responsivity of 78 kV/W and thermal time constant of 8.0 msec at a bias voltage of 0.5 V. The array performances had satisfactory uniformity less than 5 % within one-sigma. Also, 1/f noise of pixel was measured and the noise factor of $6\times10^{-11}$ was extracted. Finally, we obtained detectivity of $1.27\times10^9cmHz^{0.5}/W$ and noise equivalent temperature difference of 200 mK at a frame rate of 30 Hz.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.37-42
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• 1996

ZnO films have been deposited on oxide grown Si wafers by the conventional thermal evaporation method. Anhydrous zinc acetate was directly heated and sublimed in the laboratory-made brass boat. The substrates temperature varied from $200^{\circ}C$ to $600^{\circ}C$. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. The films deposited at high oxygen pressure exhibited higher resistivity than films at low pressure. X-Ray Diffraction(XRD), Energy Dispersive Spectroscopy(EDS) and Rutherford Backscattering Spectrometry (RBS) were conducted on the films to reveal the crystallinity and composition of the ZnO films. The ZnO films deposited at high oxygen pressure were extremly sensitive to the humidity of higher than 70 % RH.

• Journal of Sensor Science and Technology
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• v.21 no.3
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• pp.186-191
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• 2012

In this paper, we present a pH measurement method that uses a microcantilever-array-based biosensor system. It is composed of microcantilever array, liquid cell, micro syringe pump, laser diode array, position sensitive detector, data acquisition device, and data processing software. Four microcantilevers are functionalized with pH-sensitive MHA(mercaptohexadecanoic acid) as a probe, while three microcantilevers are functionalized with HDT(hexadecane thiol) as reference. We prepare PBS(phosphate buffered saline) solutions of different pH and inject them into the liquid cell with a predefined volumetric speed at regular time intervals. The functionalized mircocantilevers in the liquid cell deflect as a self-assembled monolayer on the microcantilever binds with probe molecules in the solution. The difference in deflection between the MHA-covered probe microcantilever and the HDT-covered reference microcantilever was used to compensate for thermal drift. The deflection difference clearly increases with increasing pH in the solution. It was shown that when the pH values of the PBS solutions are high, there were large variations in the deflection of microcantilevers, whereas there were small variations for low pH value. The experimental results show that the microcantilever array functionalized with MHA and HDT can detect pH value with good repeatability.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.83-83
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• 2018

최근 의료, 보건, 헬스케어 분야에 대한 관심이 증가함에 따라 질병의 조기 진단 연구가 각광 받고 있다. 특히 표면증강 라만 산란 (Surface Enhancement Raman scattering)은 고분자 검출을 위해 가장 유용한 물리 화학적 기법으로 SERS를 활용한 특정물질 검출 기술 개발에 대한 연구가 많이 이루어지고 있다. 나노구조의 국부적 표면 플라즈몬의 공명조건 (Surface Plasmon Resonance, SPR)으로 유도된 전자기장은 우수한 SERS 신호를 나타낸다. 따라서 표면 플라즈몬 공명 효과는 귀금속 나노입자의 종류, 크기 및 형태, 기판의 형상 및 구조 등에 의해서 달라지게 되므로 이들을 조절하여 보다 민감한 SERS 신호를 얻을 수 있다. 본 연구에서는 고감도 SERS-Active 기판을 제작하기 위해 SERS 기판 표면의 나노구조를 최적화 하였다. SERS 기판 표면을 제어하기 위해 공정파워, 공정압력, 기판의 온도 등의 증착공정 변수에 변화를 주어 표면의 나노구조를 형성하였다. 이를 분석하기 위해 SEM 분석을 통해 피라미드형 실리콘 기판 표면의 Au 나노구조 금속 박막을 확인하였고, XRD를 이용하여 결정성 및 결정크기를 확인하였다. Rhodamine 6G를 이용한 라만 분석을 통해 SERS 신호의 강도를 알 수 있었다. 금속 나노구조의 형태, 온도 제어를 통해 SERS 신호강도가 우수한 나노구조 기판을 제조 할 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.33.1-33.1
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• 2018

pH is expressed mathematically as $pH=-{\log}[H^+]$, is a measure of the hydrogen ion concentration, [$H^+$] to specify the acidity or basicity of an aqueous solution. The pH scale usually ranges from 0 to 14. Every aqueous solution can be measured to determine its pH value. The pH values below 7.0 express the acidity, above 7.0 are alkalinity and pH 7.0 is a neutral solution. The solution pH can be determined by indicator or by measurement using pH sensor, which measuring the voltage generated between a glass electrode and a reference electrode according to the Nernst Equation. The pH value of solutions depends on the temperature and the activity of contained ions. In nickel electroless plating process, the controlled pH value in some limited ranges are extremely important to achieve optimal deposition rate, phosphorus content as well as solution stability. Basically, nickel electroless plating solution contains of $Ni^{2+}ions$, reducing agent, buffer and complexing agents. The plating processes are normally carried out at $82-92^{\circ}C$. However, the change of its pH values with temperatures does not follow any rule. Thus, the purpose of study is to understand the relationship between pH and temperature of some based solutions and electroless nickel plating solutions. The change of pH with changing temperatures is explained by view of the thermal dynamic and the practical measurements.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.195-198
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• 2004

For a diffusion barrier against copper, tantalum nitride films have been deposited on $SiO_{2}$ by atomic layer deposition (ALD), using PEMAT(Pentakis(ethylmethylamino)tantalum) and $NH_{3}$ as precursors, Ar as purging gas. The deposition rate of TaN at substrate temperature $250^{\circ}C$ was about $0.67{\AA}$ per one cycle. The stability of TaN films as a Cu diffsion barrier was tested by thermal annealing for 30 minutes in $N_{2}$ ambient and characterized through XRD, sheet resistance, and C-V measurement(Cu($1000{\AA}$)/TaN($50{\AA}$)/$SiO_{2}$($2000{\AA}$)/Si capacitor fabricated), which prove the TaN film maintains the barrier properties Cu below $400^{\circ}C$.