• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.252-252
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• 2011

최근 주목받고 있는 amorphous gallium-indium-zinc-oxide (a-GIZO) thin film transistors (TFTs)는 수소가 첨가된 비정질 실리콘 TFT에 비해 높은 이동도와 뛰어난 전기적, 광학적 특성에 의해 큰 주목을 받고 있다. 또한 넓은 밴드갭을 가지므로 가시광 영역에서 투명한 특성을 보이고, 플라스틱 기판 위에서 구부러지는 성질에 의해 플랫 패널 디스플레이나 능동 유기 발광소자 (AM-OLED), 투명 디스플레이에 응용되고 있다. 뿐만 아니라, 일반적인 Poly-Si TFT는 자체적으로 가지는 결정성에 의해 대면적화 시 균일성이 좋지 못하지만 GIZO는 비정질상 이기 때문에 백플레인의 대면적화에 유리하다는 장점이 있다. 이러한 TFT를 제작하기 전, 전기적 특성에 대한 정보를 얻거나 예측하는 것이 중요한데, 이에 따라 고안된 구조가 바로 metal point contact FET (pseudo FET)이다. pseudo FET은 소스/드레인 전극을 따로 증착할 필요 없이 채널을 증착한 후, 프로브 탐침을 채널의 표면에 적당한 압력으로 접촉시켜 전하를 공급하는 소스와 드레인처럼 동작시킬 수 있다. 따라서 소스/드레인을 증착하거나 lithography와 같은 추가적인 공정을 요구하지 않아 소자의 특성을 보다 간단하고 수월하게 분석할 수 있다는 장점이 있다. 본 연구에서는 p-type 기판위에 100nm의 oxidation SiO2를 게이트 절연막으로 사용하는 a-GIZO pseudo FET를 제작하였다. 소자 제작 후, 열처리 온도에 따른 전기적 특성을 분석하였고, 열처리 조건은 30분간 N2 분위기에서 실시하였다. 열처리 후 전기적 특성 분성 결과, 450oC에서 가장 낮은 subthreshold swing 값과 게이트 전압의 더블 스윕 후 문턱 전압의 변화가 거의 없음을 확인하였다.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.39 no.4
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• pp.291-297
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• 2003

Al-brass is usually used as the tube material of vessel's heat exchanger for seawater cooling system because it has high thermal conductivity and good mechanical properties and high corrosion resistance due to cuprous oxide (Cu20) layer against seawater. However, Al-brass tubes of heat exchanger for vessel at the actual environment is reported that local corrosion such as stress corrosion cracking occurred by synergism effect between mechanical factor and corrosion environment In this paper, the effect of corrosion environment on the stress corrosion cracking of Al-brass in various NH4OH of 3.5% NaCl solution, under flow by constant displacement tester. Based on the test results, the behavior of polarization, stress corrosion crack propagation and dezincification phenomenon of Al-brass are investigated. The main results are as follows：(1) Increasing range of potential from open circuit potential to repassivation gets lower, as the contain rate of NH4OH gets higher. (2) As contain rate of NH4OH gets higher, SCC of Al-brass is become activation but the protection film(Cu20) of Al-brass is created in 3.5% NaCl solution. (3) According as content of NH4OH increases in 3.5% NaCl solution, the dezincifiction area is spread. It is concluded that dezincification occurred by localized preferential anodic dissolution at stress focusing region.

• ETRI Journal
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• v.32 no.3
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• pp.414-421
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• 2010

The interconnection mechanisms of a smart anisotropic conductive adhesive (ACA) during processing have been characterized. For an understanding of chemorheological mechanisms between the fluxing polymer and solder powder, a thermal analysis as well as solder wetting and coalescence experiments were conducted. The compatibility between the viscosity of the fluxing polymer and melting temperature of solder was characterized to optimize the processing cycle. A fluxing agent was also used to remove the oxide layer performed on the surface of the solder. Based on these chemorheological phenomena of the fluxing polymer and solder, an optimum polymer system and its processing cycle were designed for high performance and reliability in an electrical interconnection system. In the present research, a bonding mechanism of the smart ACA with a polymer spacer ball to control the gap between both substrates is newly proposed and investigated. The solder powder was used as a conductive material instead of polymer-based spherical conductive particles in a conventional anisotropic conductive film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.258-258
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• 2008

Among several available high-k dielectrics the lanthanum zirconium oxide ($LaZrO_x$) system is very attractive as a buffer insulating layer. Because both lanthanum and zirconium atoms, the constituents of the $LaZrO_x$ thin film, have been considered to be thermally stable in contact with Si. The $LaZrO_x$ films were deposited by a sol-gel method. After the deposition, The $LaZrO_x$ films were crystallized at $750^{\circ}C$ for 30 minutes in $O_2$ ambient. PVDF-TrFE films were deposited on these $LaZrO_x$/Si structures using a sol-gel technique. The sol-gel solution was spin-coated on $LaZrO_x$/Si structures at 500 rpm for 5 sec and 2500 rpm for 15 sec. The deposited layer was dried at $165^{\circ}C$ for 30 min in air on a hot-plate. Then, we deposited Au electrode on PVDF-TrFE films using thermal evaporation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.17-20
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• 1999

The retention and fatigue properties of ferroelectric LiNbO$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$-V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s .

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.449-454
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• 2002

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.425-427
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• 1996

New fabrication technique was developed to make three dimensional silicon microstructure with five fold vertical steps through entire wafer thickness. Each step is pre-defined on multiply stacked thermal oxide and silicon nitride (O/N) layers by photolithographies. Multi-stepped silicon microstructure is formed by anisotropic etch in aqueous KOH solution with the patterned nitride film as masking layer. Fabricated microstructure consists of four $16{\mu}m$ thick flexural spring beams, $290{\mu}m$ thick proof mass, mesas for overrange stop with $10{\mu}m$ height from the surface of the proof mass, and the other mesas and V grooves used for assembling this structure to the packaging frame of pendulous servo accelerometer. Using the numerical finite element method (FEM) simulator: ABAQUS, mechanical characteristics of the fabricated microstructure by the developed technique was compared with those of the same structure processed by one step silicon bulk etch followed by oxidation and patterning the etched region.

• Transactions on Electrical and Electronic Materials
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• v.17 no.4
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• pp.189-195
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• 2016

Micro Hotplate (MHP) is the key component in micro-sensors, particularly gas sensors. Indeed, in metal oxide gas sensors MOX, micro-heater is used as a hotplate in order to control the temperature of the sensing layer which should be in the requisite temperature range over the heater area, so as to detect the resistive changes as a function of varying concentration of different gases. Hence, their design is a very important aspect. In this paper, we have presented the design and simulation results of a meander micro heater based on three different materials - platinum, titanium and tungsten. The dielectric membrane size is 1.4 mm × 1.6 mm with a thickness of 1.4 μm. Above the membrane, a meander heating film was deposed with a thickness of 100 nm. In order to optimize the geometry, a comparative study by simulating two different heater thicknesses, then two inter track widths has also been presented. Power consumption and temperature distribution were determined in the micro heater´s structure over a supply voltage of 5, 6, and 7 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.939-942
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

• Bulletin of the Korean Chemical Society
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• v.19 no.8
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• pp.830-835
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• 1998

The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.