Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of discharge power on the electrical properties of ZnO:Al transparent conducting films by RF magnetron sputtering

RF 마그네트론 스퍼터법에 의한 ZnO:Al 투명전도막 특성에 미치는 방전전력의 영향

  • 이성욱 (경성대학교 전기전자공학과) ;
  • 김병섭 (경성대학교 전기전자공학과) ;
  • 이수호 (경성대학교 전기전자공학과) ;
  • 임동건 (충주대학교 전자공학과) ;
  • 박민우 (경성대학교 신소재공학과) ;
  • 이세종 (경성대학교 신소재공학과) ;
  • 곽동주 (경성대학교 전기전자공학과)
  • Published : 2004.07.05
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Abstract

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

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