Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Retention and Fatigue Properties of MFS Devices using Ferroelectric $LiMbO_3$ Thin Films

$LiMbO_3$ 강유전체 박막을 이용한 MFS 디바이스의 Retention 및 Fatigue 특성

  • 정순원 (청주대학교 전자공학과) ;
  • 김채규 (청주대학교 전자공학과) ;
  • 김용성 (청주대학교 전자공학과) ;
  • 김진규 (청주대학교 전자공학과) ;
  • 이남열 (청주대학교 전자공학과) ;
  • 김광호 (청주대학교 전자 · 정보통신 · 반도체 공학부) ;
  • 유병곤 (한국전자통신연구원) ;
  • 이원재 (한국전자통신연구원)
  • Published : 1999.05.01
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Abstract

The retention and fatigue properties of ferroelectric LiNbO$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$-V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s .

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