• Title/Summary/Keyword: thermal diffusion

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Molecular Dynamics Simulation Study of Transport Properties of Diatomic Gases

  • Lee, Song Hi;Kim, Jahun
    • Bulletin of the Korean Chemical Society
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    • v.35 no.12
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    • pp.3527-3531
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    • 2014
  • In this paper, we report thermodynamic and transport properties (diffusion coefficient, viscosity, and thermal conductivity) of diatomic gases ($H_2$, $N_2$, $O_2$, and $Cl_2$) at 273.15 K and 1.00 atm by performing molecular dynamics simulations using Lennard-Jones intermolecular potential and modified Green-Kubo formulas. The results of self-diffusion coefficients of diatomic gases obtained from velocity auto-correlation functions by Green-Kubo relation are in good agreement with those obtained from mean square displacements by Einstein relation. While the results for viscosities of diatomic gases obtained from stress auto-correlation functions underestimate the experimental results, those for thermal conductivities obtained from heat flux auto-correlation functions overestimate the experimental data except $H_2$.

A Study on the Surface Polishing of Diamond Thin Films by Thermal Diffusion (열확산에 의한 다이아몬드 박막의 표면연마에 관한 연구)

  • Bae, Mun Ki;Kim, Tae Gyu
    • Journal of the Korean Society for Heat Treatment
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    • v.34 no.2
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    • pp.75-80
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    • 2021
  • The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

Investigation of Vanadium-based Thin Interlayer for Cu Diffusion Barrier

  • Han, Dong-Seok;Park, Jong-Wan;Mun, Dae-Yong;Park, Jae-Hyeong;Mun, Yeon-Geon;Kim, Ung-Seon;Sin, Sae-Yeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.41.2-41.2
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    • 2011
  • Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.

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THERMAL CONDUCTION IN MAGNETIZED TURBULENT GAS

  • CHO JUNGYEON;LAZARIAN A.
    • Journal of The Korean Astronomical Society
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    • v.37 no.5
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    • pp.557-562
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    • 2004
  • We discuss diffusion of particles in turbulent flows. In hydrodynamic turbulence, it is well known that distance between two particles imbedded in a turbulent flow exhibits a random walk behavior. The corresponding diffusion coefficient is ${\~}$ ${\upsilon}_{inj}{\iota}_{turb}$, where ${\upsilon}_{inj}$ is the amplitude of the turbulent velocity and ${\iota}_{turb}$ is the scale of the turbulent motions. It Is not clear whether or not we can use a similar expression for magnetohydrodynamic turbulence. However, numerical simulations show that mixing motions perpendicular to the local magnetic field are, up to high degree, hydrodynamical. This suggests that turbulent heat transport in magnetized turbulent fluid should be similar to that in non-magnetized one, which should have a diffusion coefficient ${\upsilon}_{inj}{\iota}_{turb}$. We review numerical simulations that support this conclusion. The application of this idea to thermal conductivity in clusters of galaxies shows that this mechanism may dominate the diffusion of heat and may be efficient enough to prevent cooling flow formation when turbulence is vigorous.

Solid State Diffusion Brazing of the Aluminum Alloy Castings According to the Heat Treatment Conditions (열처리온도 및 시간에 따른 알루미늄 주조재의 고상확산 접합 특성)

  • Sun, J.H.;Shin, S.Y.;Hong, J.W.
    • Journal of the Korean Society for Heat Treatment
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    • v.21 no.6
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    • pp.300-306
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    • 2008
  • Solid state diffusion brazing of aluminum castings (AC4C) and wrought alloys (Al6061) was conducted in order to improve thermal conductivity and temperature uniformity of the aluminum heater which was generally fabricated by casting method. Tensile strength and thermal conductivity are raised with increasing brazing temperature, obtaining 122.5 MPa and $206W/m{\cdot}K$ at $540^{\circ}C$ 5hrs brazing conditions, respectively. The diffusion brazed heater, shows maximum temperature difference of $4^{\circ}C$, exhibits a enhanced temperature uniformity compared with the cast heater having the maximum temperature difference of $11^{\circ}C$.

Diffusion coefficient estimation of Si vapor infiltration into porous graphite

  • Park, Jang-Sick
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.190.1-190.1
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    • 2015
  • Graphite has excellent mechanical and physical properties. It is known to advanced materials and is used to materials for molds, thermal treatment of furnace, sinter of diamond and cemented carbide tool etc. SiC materials are coated on the surface and holes of graphite to protect particles emitted from porous graphite with 5%~20% porosity and make graphite hard surface. SiC materials have high durability and thermal stability. Thermal CVD method is widely used to manufacture SiC thin films but high cost of machine investment and production are required. SiC thin films manufactured by Si reaction liquid and vapore with carbon are effective because of low cost of machine and production. SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si materials are evaporated to the graphite surface in about $10^{-2}$ torr and high temperature. Si materials are melted in $1410^{\circ}C$. Si vapor is infiltrated into the surface hole of porous graphite and $Si_xC_y$ compound is made. $Si_x$ component is proportional to the Si vapor concentration. Si diffusion coefficient is estimated from quadratic equation obtained by Fick's second law. The steady stae is assumed. Si concentration variation for the depth from graphite surface is fitted to quadratic equation. Diffusion coefficient of Si vapor is estimated at about $10^{-8}cm^2s^{-1}$.

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THERMAL DIFFUSION AND RADIATION EFFECTS ON UNSTEADY MHD FREE CONVECTION HEAT AND MASS TRANSFER FLOW PAST A LINEARLY ACCELERATED VERTICAL POROUS PLATE WITH VARIABLE TEMPERATURE AND MASS DIFFUSION

  • Venkateswarlu, M.;Ramana Reddy, G.V.;Lakshmi, D.V.
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • v.18 no.3
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    • pp.257-268
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    • 2014
  • The objective of the present study is to investigate thermal diffusion and radiation effects on unsteady MHD flow past a linearly accelerated vertical porous plate with variable temperature and also with variable mass diffusion in presence of heat source or sink under the influence of applied transverse magnetic field. The fluid considered here is a gray, absorbing/emitting radiation but a non-scattering medium. At time t > 0, the plate is linearly accelerated with a velocity $u=u_0t$ in its own plane. And at the same time, plate temperature and concentration levels near the plate raised linearly with time t. The dimensionless governing equations involved in the present analysis are solved using the closed analytical method. The velocity, temperature, concentration, skin-friction, the rate or heat transfer and the rate of mass transfer are studied through graphs in terms of different physical parameters like magnetic field parameter (M), radiation parameter (R), Schmidt parameter (Sc), Soret number (So), Heat source parameter (S), Prandtl number (Pr), thermal Grashof number (Gr), mass Grashof number (Gm) and time (t).

Study of Driving and Thermal Stability of Anode-type Ion Beam Source by Charge Repulsion Mechanism

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • v.27 no.3
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    • pp.47-51
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    • 2018
  • We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.

Improvement in Long-term Stability of Pd Alloy Hydrogen Separation Membranes (팔라듐 합금 수소분리막의 내구성 향상)

  • Kim, Chang-Hyun;Lee, Jun-Hyung;Jo, Sung-Tae;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.48 no.1
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    • pp.11-22
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    • 2015
  • Pd alloy hydrogen membranes for hydrogen purification and separation need thermal stability at high temperature for commercial applications. Intermetallic diffusion between the Pd alloy film and the porous metal support gives rise to serious problems in long-term stability of Pd alloy membranes. Ceramic barriers are widely used to prevent the intermetallic diffusion from the porous metal support. However, these layers result in poor adhesion at the interface between film and barrier because of the fundamentally poor chemical affinity and a large thermal stress. In this study, we developed Pd alloy membranes having a dense microstructure and saturated composition on modified metal supports by advanced DC magnetron sputtering and heat treatment for enhanced thermal stability. Experimental results showed that Pd-Cu and Pd-Ag alloy membranes had considerably enhanced long-term stability owing to stable, dense alloy film microstructure and saturated composition, effective diffusion barrier, and good adhesive interface layer.

Fabrication and Characterization of Thermal Expanded Core Fiber using the Flame Brushing Method (프레임 브러싱 방법을 이용한 열확산 코어 광섬유 제작 및 특성)

  • Kim, Jun-Hyong;Yang, Hoe-Young;Lee, Sang-Pil;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1077-1081
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    • 2007
  • Thermal expanded core (TEC) fiber can reduce, being advantaged from thermal diffusion technology, connection loss by expanding the tolerance in relation to axial offset and gap when making optical connection having mode field diameter (MFD) of optical fiber expanded locally. In this paper, TEC fiber fabrication system based on the frame brushing techniques using twin-torch tip was designed and developed in order to maintain a stable thermal diffusion and single-mode when manufacturing TEC fiber. We were able to obtain that varied kinds of TEC fibers of which MFD could have been extended between $20\;{\mu}m$ and $40\;{\mu}m$ by TEC fiber fabrication system. In addition, the characteristic of connection loss was measured by alignment two TEC fibers of which MFD was $30\;{\mu}m$.