Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2011.05a
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- Pages.41.2-41.2
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- 2011
Investigation of Vanadium-based Thin Interlayer for Cu Diffusion Barrier
- Han, Dong-Seok ;
- Park, Jong-Wan ;
- Mun, Dae-Yong ;
- Park, Jae-Hyeong ;
- Mun, Yeon-Geon ;
- Kim, Ung-Seon ;
- Sin, Sae-Yeong
- 한동석 (한양대학교 나노반도체공학과) ;
- 박종완 (한양대학교 신소재공학과) ;
- 문대용 (한양대학교 나노반도체공학과) ;
- 박재형 (한양대학교 나노반도체공학과) ;
- 문연건 (한양대학교 신소재공학과) ;
- 김웅선 (한양대학교 신소재공학과) ;
- 신새영 (한양대학교 신소재공학과)
- Published : 2011.05.27
Abstract
Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane
Keywords
- Copper interconnect;
- Diffusion barrier;
- RF magnetron Sputter;
- Thermal stability;
- Self-forming barrier