• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.530-538
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• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

• Journal of the Korean Chemical Society
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• v.36 no.3
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• pp.366-375
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• 1992

The aminolysis of carbamates are studied MO theoretically using AM1 method. The results indicated that the reactivity is determined by bond-making and-breaking and steric effects; as a result the $B_{AC}2$ mechanism is favored due to favorable contribution of bond formation in agreement with experimental results. We found that although thermal 2＋2 reaction is forbidden, it becomes allowed when the total electrons involved are six in a four-center reaction and proceeds by a consecutive onestep mechanism. Comparison of activation barriers show that greater energy is required in breaking a sigma bond compared with the energy required for breaking a $\pi$ bond, by 17 kcal/mol and the six membered ring structure is favored about 5 kcal/mol sterically.

• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.48-51
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• 2011

We performed macro-spin simulation studies of the current-induced magnetization reversal of nanomagnetic elements with short current pulses. A special attention was paid to the effect of the energy barrier on the switching current distribution. The switching current and its distribution increase with decreasing the current pulse-width. The relationship between the energy barrier and switching current distribution is described by the Arrhenius-N$\'{e}$el law at a long pulse-width regime. At a regime of short pulse-width, however, the relationship is left unaddressed. The difficulty to address this issue arises because the magnetization switching with a short current pulse is governed not by the thermal activation but by the precession motion. Therefore, an exact formulation for the short pulse regime by solving the Fokker-Plank equation is needed to understand the result.

• Journal of Digital Convergence
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• v.18 no.4
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• pp.341-346
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• 2020

Polymethyl methacrylate (PMMA), a self-curing resin mainly used in removable orthodontic appliances, is an acrylic resin mainly used in the field of modern dentistry. As an advantage, it has been used for a long time as a material for orthodontic devices in dentistry due to its color and volume, tissue affinity, and stability. The production of PMMA can be divided into self-polymerization method and thermal polymerization method according to activation method. Self-curing resins have long been used as orthodontic devices. The resin injection method is largely divided into a sprinkle-on method and a mixing method. In this study, we intend to test the mechanical properties according to the resin injection method of the orthodontic device, such as strength, modulus of elasticity, and surface roughness. There was no significant difference in strength as a result of three-point bending strength test on rectangular specimens (1.4 × 3.0 × 19.0 mm) of orthodontic PMMA. There was also no significant difference in hardness. There was no significant difference in surface roughness. It was confirmed that the orthodontic PMMA had no significant difference in mechanical properties according to the resin injection method of the orthodontic device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.407-411
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• 2000

Low-temperature solder glass for use in electronic package was experimentally prepared and its crystallization behavior was investigated using differential thermal analysis (DTA) under nonisothermal condition. The composition of the solder glass was determined from PbO-ZnO-$B_2$$O_3$-$TiO_2$ glasses containing small amounts of CaO, $SiO_2$$A1_2$$O_3$ and $P_2$$O_5$. The crystallization exotherm corresponding to the formation of lead titanate (PbTiO$_3$) was observed. The crystallization of $PbTiO_3$was a three-dimensional process with the average activation energy of 223$\pm$3 kJ/mol for the crystallization from the glass matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.120-120
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• 1999

III-nitride계 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 수 있는 낮은 저항의 ohmic contact은 필수적이다. Al이나 Ti와 같은 물질을 기초로 한 n-GaN의 경우는 이미 많은 연구결과가 발표되어 전기적 광학적 소자를 동작하는데 충분히 낮은 ohmic contact저항( )을 었다. 그러나 p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도( )의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 이상의 높은 값을 갖게 만들고 있으며, 이에 대한 해경방안으로는 고온의 열처리를 통하여 p-GaN와 금속 사이에서 화학적 반응을 일으킴으로써 표면 근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechanism을 이용하는 것이다. 이로 인해 결국 낮은 접촉 비저항을 얻을 수 있게되며, 일반적으로 p-GaN에서는 Nidl 좋은 물질로 알려져 있다. 그러나 Ni은 50$0^{\circ}C$이상의 열처리에서 쉽게 산화되는 특성 때문에 높은 캐리어를 얻는데 어려운 문제점이 있다. 이에 본 연구에서는 MBE로 성장된 p-GaN박막을 Mg의 activation을 더욱 증가시키기 위해 N2 분위기에서 15분간 90$0^{\circ}C$에서 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/Au를 ohmic metal로 하여 contact한 후에 90$0^{\circ}C$에서 10초간 rapid thermal annealing (RTA)처리를 했다. 성장된 박막의 광학적 성질은 PL로써 측정하였으며, photoconductivity 실험을 통해 impurity의 life time을 분석하였고, persistent photoconductivity를 통해 dark current를 측정하였다. 또한 contact resistance를 계산하기 위해 circular-TLM method을 이용하여 I-V 특성을 조사하였다.

• Membrane Journal
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• v.11 no.3
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• pp.124-132
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• 2001

Silica membranes were prepared on a porous ${\alpha}$-alumina tube with pore size of 150nm by sol-gel and chemical vapor deposition(CVD) method for hydrogen separation at high temperatures. Silica and ${\gamma}$-lumina membranes formed by the sol-gel method possessed a large amount of mesopores of a Knudsen diffusion regime. In order to improve the $H_2$ selectivity, silica was deposited in the sol-gel derived silica/${\gamma}$-alumina layer by thermal decomposition of tetraethyl orthosilicate(TEOS) at $600^{\circ}C$. The CVD with forced cross flow through the porous wall of the support was very effective in plugging mesopores that were left unplugged in the membranes. The CVD modified silica/alumina composite membrane completely rejected nitrogen permeation and thus showed a high $H_2$ selectivity by molecular sieve effect. the permeation of hydrogen was explained by activated diffusion and the activation energy was 9.52kJ/mol.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.642-647
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• 2015

The perovskite solid solutions of the $Sr_{1-x}Mg_xFe{^{3+}}_{1-{\tau}}Fe{^{4+}}_{\tau}O_{3-y}$ system (x=0.0, 0.1, 0.2, and 0.3) were synthesized in $N_2$ at $1,150^{\circ}C$. X-ray powder diffraction study assured that all the four samples had cubic symmetries(SM-0: $3.865{\AA}$, SM-1: $3.849{\AA}$, SM-2: $3.833{\AA}$, and SM-3: $3.820{\AA}$) and that the lattice volumes decreased steadily from $57.7{\AA}^3$ to $55.7{\AA}^3$ with x values. The nonstoichiometric chemical formulas were determined by Mohr salt analysis and with the increase of x values the amounts of $Fe^{4+}$ ion and oxygen were decreased simultaneously. Thermal analysis showed that SM-0 started to lose its oxygen at $450^{\circ}C$ and SM-1, Sm-2, and SM-3 began to lose their oxygen at around $350{\sim}400^{\circ}C$. SM-0 showed almost reversible weight change in the cooling process. All the samples exhibited semiconducting behaviors in the temperature range of $10{\sim}400^{\circ}C$. Conductivities of the 4 samples were decreased in the order of SM-0, SM-1, SM-2, and SM-3 at constant temperature. The activation energies of the conductions were in the range of 0.176 eV~0.244 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.388-393
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• 1999

In this study, the $CaSO_4:Eu$ TLDs are fabricated and their trap parameters are determined. The optimum concentration of Eu for fabrication of the $CaSO_4:Eu$ TLD is 0.5 mol% and optimum temperature is $600^{\circ}C$ for 2 hours sintering in air. The glow curve of $CaSO_4:Eu$ consists of two glow peaks and these peaks are isolated by thermal bleaching method. Trap parameters of two glow peaks are measured using the initial rise, the peak shape, the heating rate and the least square curve fitting methods. The activation energies of the glow peak I and II are 1.00 eV and 1.09 eV, and the frequency factors are $7.04{\times}10^{11}\;s^{-1}$ and $5.12{\times}10^{11}\;s^{-1}$ and the kinetic orders are 1.11 and 1.33, respectively.