• 한국전기전자재료학회논문지
• /
• 제23권4호
• /
• pp.298-302
• /
• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• 조명전기설비학회논문지
• /
• 제14권6호
• /
• pp.69-77
• /
• 2000

본 논문에서는 찬우$\mid$강하법에 의한 접지저항 및 대지첸위 분표의 측캠시 전휴보조전극의 영향에 대하여 기술하였으며, 측정시 오치를 최소화하는 기법을 제안하였다. 전위강해법은 전위와 천류의 측정에 이론적인 비1깅을 두고 있으며, 측정오차는 주로 측정시 설치하는 보조전극의 위치와 자체저항에 기인한다. 피측정 접지전극의 접지저항은 전위강하법에서 전위보조전극을 피측정 접지전극과 전류보조전극이 이루는 일직선상에 위치시킬 때 61.8[%]법칙을 적용하여 측정한다. 하지만 건물이나 포장도로, 구조물 등이 산재해 있는 도심의 경우에는 현장에서 피측정 접지전극과 전류보조전극 사이에 적결한 이격거리 확보가 불가능하거냐 전류보조전극의 접지저행값이 피측정 챔 지전극에 비하여 큰 값을 가지는 경우가 있다. 파측정 접지천극과 전류보조전극을 충분히 이격시키지 않거나 전류류보조전극의 접지저항값이 피측청 접지전극의 접지저항보다 비정상척으로 큰 경우 접지저항의 측정은 오차를 수반하게 되며, 측정된 접지저항값은 오차즐 보정해 주어야 한다. 본 연구애서 측정대상 전극은 길이 2.4[m]의 봉형 접지전극으호 하였으며, 전류보조전극의 영향을 고려할 때 피측정 접지전극과 전류보조전극의 적정한 이격거리는 피측정 접치전극 길이의 5배 이상으로 하여야 전위보조전극을 사설하기가 용이하며 측정정확도의 확보에 유리하다. 또한 전류보존전극의 접지저항값이 피측정 접지전극의 접지저항값 약 36.5배 이하에서는 거의 오차를 발생시키지 않는다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.299-302
• /
• 2000

RTD temperature sensor is a thermoresistor which uses the liner dependence of the resistance of the sensing material on the temperature, and has good stability and sensibility, so it can be used in highly precise temperature measurement. In this study RTD sensor was fabricated using Pt thin film. The Pt thin film was deposited on alumina using DC-Sputter, and annealed with various temperature. Through the experiments of XRD, AFM, 4-point probe, the surface structure of the thin film with annealing conditions and their effects on the electrical resistance were investigated. RTD with serpentine pattern was fabricated using Lift-off and resistance-temperature characteristics were studied.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.426-429
• /
• 1999

In this paper, we have provided the measurement technique of the grounding mesh resistance by field measurements. The standard of measurement is specified in the IEEE Std 81.2-1991 and JEAC 5001-1988, which is the the fall-of-potential method by test-current injection, but this method is difficult to apply at field, where is small around a electric power substation of domestic. For the convenient measurement method, space of assistant probe and quantity of test-current injection are changed step for step. As the result, ' the proposed measurement technique of grounding mesh resistance is that the space of current and potential probes must be fixed at 150rn from a grounding mesh, the test-current injection has to keep 5A or more.

• 한국세라믹학회지
• /
• 제28권2호
• /
• pp.101-108
• /
• 1991

0.2 mo1% La doped BaTiO3 samples were prepared by a wet chemical process (Pechini process) and electrical conductivity were measured from annealing temperatures(800-110$0^{\circ}C$) to room temperature continuously. 2 probe I-V characteristics showed that Pt electrodes were non-ohmic below about 80$0^{\circ}C$ for Ladoped sample. I-V curves showed varistor behavior and breakdown voltages showed PTC-like behavior. AC complex impedance of 0.2 La and 0.05 Mn mo1% doped BaTiO3 samples with three different electrodes (electroless Ni, Pt, Ag electrodes) were measured with temperature variation. Complex impedance plots showed that the samples with electroless Ni electrodes have negligible electrode resistance. Samples with Ag or Pt paste electrodes showed large electrode resistance. PTC effect, which is defined as the ratio of maximum resistance to minimum resistance, was found to be less than 10 for 0.2 mo1% La doped dense sample however greater than 105 with codoping of 0.05 mo1% Mn and 0.2 mol% La.

• Composites Research
• /
• 제37권4호
• /
• pp.330-336
• /
• 2024

Silicon carbide (SiC) fibers exhibit excellent heat and chemical resistance at high temperatures. In this study, polycarbosilane melt spinning, oxidation curing, and pyrolysis were performed to fabricate amorphous SiC fibers, and their resistance heating characteristics were evaluated. A stick-type amorphous silicon carbide fiber heating element was manufactured, and the resistance was measured using the two-point probe method. The structural, electrical, and heating characteristics were evaluated at different pyrolysis temperatures. The fiber produced at 1300℃ displayed the highest conductivity and the maximum heating compared to the fibers produced at 1200℃ and 1400℃. This may be attributed to difference in the structures of the fibers, particularly the SiC and graphitic carbon structures.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.522-525
• /
• 2004

ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.1042-1045
• /
• 2004

ITO thin films ($\sim150nm$) are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AEM). The sheet resistance of ITO thin films compared $s_11$ values by using a near field scanning microwave microscope.

• 센서학회지
• /
• 제21권1호
• /
• pp.34-38
• /
• 2012

We have developed a cost effective test socket for ball grid array(BGA) integrated circuit(IC) packages using BeCu metal sheet as a test probe. The BeCu furnishes the best combination of electrical conductivity and corrosion resistance. The probe of the test socket was designed with a BeCu cantilever. The cantilever was designed with a length of 450 ${\mu}m$, a width of 200 ${\mu}m$, a thickness of 10 ${\mu}m$, and a pitch of 650 ${\mu}m$ for $11{\times}11$ BGA. The fabrication of the test socket used techniques such as through-silicon-via filling, bonding silicon wafer and BeCu metal sheet with dry film resist(DFR). The test socket is applicable for BGA IC chip.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 E
• /
• pp.2355-2357
• /
• 1999

Estimating equivalent soil model which represents an actual soil structure and its electrical characteristics, is extremely improtant for good substation grounding system design and analysis. Since the equivalent soil model is deduced based on the measured apparent soil resistivity - generally obtained from Wenner's 4-point method, reasonable and accurate measuring technique and procedure guarantee good grounding system design and analysis. The paper aims to show the importance of reasonable enough probe spacing by presenting the influence of soil modelling to estimation and measurement of grounding resistance of substation grounding grid.