Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Nondestructive measurement of sheet resistance of indium tin oxide(ITO) thin films by using a near-field scanning microwave microscope

근접장 마이크로파 현미경을 이용한 ITO 박막 면저항의 비파괴 관측 특성 연구

  • Published : 2004.11.11
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Abstract

ITO thin films $({\sim}150\;nm)$ are deposited on glass substrates by different deposition condition. The sheet resistance of ITO thin films measured by using a four probe station. The microstructure of these films is determined using a X-ray diffractometer (XRD) and a scanning electron microscope (SEM) and a atomic force microscope (AFM). The sheet resistance of ITO thin films compared $s_{11}$ values by using a near field scanning microwave microscope.

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