• Title/Summary/Keyword: team CPR

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Analysis of Satisfaction and Effectiveness of On-board Medical Education - For Crew and Medical Managers before Boarding - (선상 의료교육의 만족도와 효과에 대한 분석 - 승선 전 선원 및 의료관리자를 대상으로 -)

  • Lee, Chang-Min;Park, Tae-Hyun;Choi, Byung-Kwan
    • Journal of Navigation and Port Research
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    • v.42 no.4
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    • pp.291-298
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    • 2018
  • The purpose of this study was to analyze the effectiveness of on-board medical education for crew and medical managers. The satisfaction of the crew and the medical managers after undergoing the medical education was selected as a measure of effectiveness. The data collection period extended from October 2015 to March 2018 for about 2 years and 6 months, and a total of 310 questionnaires were collected and sampled. However, in this study, regression analysis was performed with only 96 samples because of the addition and modification of questionnaire items in the regression analysis. This study investigated the effect of on-board medical educational assistance (trauma education, nursing care, CPR, and overall educational content) and control variables (total boarding career, age, final education, and education year) on satisfaction. The important findings were as follows: i) Higher the degree of trauma education, higher was the satisfaction, ii) higher the degree of overall educational content, higher was the satisfaction, iii) higher the degree of CPR education, higher was the satisfaction, iv) increased total boarding career reduced the satisfaction level, v) and higher the final education, higher was the satisfaction.

A Study on Solid-Phase Epitaxy Emitter in Silicon Solar Cells (고상 성장법을 이용한 실리콘 태양전지 에미터 형성 연구)

  • Kim, Hyunho;Ji, Kwang-Sun;Bae, Soohyun;Lee, Kyung Dong;Kim, Seongtak;Park, Hyomin;Lee, Heon-Min;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.3 no.3
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    • pp.80-84
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    • 2015
  • We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

Preparation of a Dense Cu(In,Ga)Se2 Film From (In,Se)/(Cu,Ga) Stacked Precursor for CIGS Solar Cells

  • Mun, Seon Hong;Chalapathy, R.B.V.;Ahn, Jin Hyung;Park, Jung Woo;Kim, Ki Hwan;Yun, Jae Ho;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.7 no.1
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    • pp.1-8
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    • 2019
  • The $Cu(In,Ga)Se_2$ (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to $500^{\circ}C$ the CIGS film consisted of CIGS phase and secondary phases including $In_4Se_3$, InSe, and $Cu_9(In,Ga)_4$. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing $450^{\circ}C$ and subsequent Se annealing $550^{\circ}C$ showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.

Melt-Crystal Interface Shape Formation by Crystal Growth Rate and Defect Optimization in Single Crystal Silicon Ingot (단결정 실리콘 잉곳 결정성장 속도에 따른 고-액 경계면 형성 및 Defect 최적화)

  • Jeon, Hye Jun;Park, Ju Hong;Artemyev, Vladimir;Jung, Jae Hak
    • Current Photovoltaic Research
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    • v.8 no.1
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    • pp.17-26
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    • 2020
  • It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

A Study on Economic Demand Response NBT and Performance (우리나라 전력시장에서 경제성 DR의 NBT 및 낙찰 관계 분석)

  • Yang, Min Seung;Lee, Sung Moo
    • Current Photovoltaic Research
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    • v.5 no.3
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    • pp.100-104
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    • 2017
  • This paper analyzes the correlation between Net Benefit Test (NBT) and System marginal price (SMP), which has a significant impact on the allocation of demand response (DR) resources in resource scheduling and commitment (RSC) process, based on the performance data of the demand resource market which has been established in 2014. Demand resources compete with generation resources in the RSC process, and it is prescribed to use demand resources only when net benefit occurs. Analysis result shows that the larger the SMP than the Net Benefit Threshold Price (NBTP), the more the winning bid of demand response resource was. It is interpreted that the introduction of NBT in DR market is justified. The demand resource market has been steadily growing. It is required to expand the scope of resources up to the small-sized DR, and to expand the functionalities of demand resources not only in the current energy market but also in the reserve market in the future. In order for that, institutional improvements are required.

Characterization of Combined Micro- and Nano-structure Silicon Solar Cells using a POCl3 Doping Process

  • Jeong, Chaehwan;Kim, Changheon;Lee, Jonghwan;Yi, Junsin;Lim, Sangwoo;Lee, Suk-Ho
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.69-72
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    • 2013
  • Combined nano- and micro-wires (CNMWs) Si arrays were prepared using PR patterning and silver-assisted electroless etching. A $POCl_3$ doping process was applied to the fabrication of CNMWs solar cells. KOH solution was used to remove bundles in CNMWs and the etching time was varied from 30 to 240 s. The lowest reflectance of 3.83% was obtained at KOH etching time of 30 s, but the highest carrier lifetime of $354{\mu}s$ was observed after the doping process at 60 s. At the same etching time, a $V_{oc}$ of 574 mV, $J_{sc}$ of $28.41mA/cm^2$, FF of 74.4%, and Eff. of 12.2% were achieved in the CNMWs solar cell. CNMWs solar cells have potential for higher efficiency by improving the post-process and surface-rear side structure.

Development of Clinical Practice Guidelines in a Hospital (병원단위의 임상진료지침 개발과정)

  • Shin, Youngsoo;Kim, Chang-Yup;Oh, Byung-Hee;Han, Kyou-Sup;Yoon, Byung-Woo;Han, Joon-Koo;Khang, Young-Ho
    • Quality Improvement in Health Care
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    • v.4 no.1
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    • pp.82-103
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    • 1997
  • Background : With increased concerns about variation among physician's practice pattern and their impact on the quality of care, clinical practice guidelines have been developed by many different organizations, with differing aims and incentives. From the same point of view, there is growing interest in the development of clinical practice guidelines in Korea, but with only a few examples. As a result, there is not much exploration on the incentive and barrier to develop guidelines as well as description on the development process. The purposes of this study are to describe the process of the four different clinical practice guidelines in a hospital setting, and to identify incentives and barriers in the development of guidelines. Methods : For this research, a clinical practice guideline development committee and four clinical practice guideline development teams were organized in a university hospital which has more than 1,200 bead. Twenty eight doctors, three nurses, and one technician participated as members of development teams for eight months. Four to six meetings were held, and three to seven departments in the hospital were involved. Results : The topics which developed into clinical practice guidelines were cardiopulmonary resuscitation(CPR), blood transfusion, anticoagulation, and angiography. The main goals set by teams were education(CPR, angiography), risk management(blood transfusion), and to enhance quality of care(anticoagulation). Among four teams, only in the team for anticoagulation guideline medical record review and pilot-testing were performed. Also literature review was not carried out systematically. However, all the guidelines were developed by multidisciplinary be used as standard protocols in the practice. Conclusion : Experience and skill in developing process has to be improved to have a more valid and useful practice guideline. In particular, literature review and problem identification by examining medical record should be emphasized. Also further studies on the clinical outcomes of the guidelines application and changes in physicians' behaviors would be required.

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Degradation and Stability of Organic-Inorganic Perovskite Solar Cells (유 무기 페로브스카이트 태양전지의 열화와 안정성)

  • Cho, Kyungjin;Kim, Seongtak;Bae, Soohyun;Chung, Taewon;Lee, Sang-won;Lee, Kyung Dong;Lee, Seunghun;Kwon, Guhan;Ahn, Seh-Won;Lee, Heon-Min;Ko, Min Jae;Kang, Yoonmook;Lee, Hae-seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.4 no.2
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    • pp.68-79
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    • 2016
  • The power conversion efficiency of perovskite solar cells has remarkably increased from 3.81% to 22.1% in the past 6 years. Perovskite solar cells, which are based on the perovskite crystal structure, are fabricated using organic-inorganic hybrid materials. The advantages of these solar cells are their low cost and simple fabrication procedure. Also, they have a band gap of about 1.6 eV and effectively absorb light in the visible region. For the commercialization of perovskite solar cells in the field of photovoltaics, the issue of their long term stability cannot be overlooked. Although the development of perovskite solar cells is unprecedented, their main drawback is the degradation of the perovskite structure by moisture. This degradation is accelerated by exposure to UV light, temperature, and external bias. This paper reviews the aforesaid reasons for perovskite solar cell degradation. We also discuss the research directions that can lead to the development of perovskite solar cells with high stability.

Electrical Loss Reduction in Crystalline Silicon Photovoltaic Module Assembly: A Review

  • Chowdhury, Sanchari;Kumar, Mallem;Ju, Minkyu;Kim, Youngkuk;Han, Chang-Soon;Park, Jinshu;Kim, Jaimin;Cho, Young Hyun;Cho, Eun-Chel;Yi, Junsin
    • Current Photovoltaic Research
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    • v.7 no.4
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    • pp.111-120
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    • 2019
  • The output power of a crystalline silicon (c-Si) photovoltaic (PV) module is not directly the sum of the powers of its unit cells. There are several losses and gain mechanisms that reduce the total output power when solar cells are encapsulated into solar modules. Theses factors are getting high attention as the high cell efficiency achievement become more complex and expensive. More research works are involved to minimize the "cell-to-module" (CTM) loss. Our paper is aimed to focus on electrical losses due to interconnection and mismatch loss at PV modules. Research study shows that among all reasons of PV module failure 40.7% fails at interconnection. The mismatch loss in modern PV modules is very low (nearly 0.1%) but still lacks in the approach that determines all the contributing factors in mismatch loss. This review paper is related to study of interconnection loss technologies and key factors contributing to mismatch loss during module fabrication. Also, the improved interconnection technologies, understanding the approaches to mitigate the mismatch loss factors are precisely described here. This research study will give the approach of mitigating the loss and enable improvement in reliability of PV modules.

Low-temperature Growth of Cu(In,Ga)Se2 Thin Film and NaF Post Deposition Treatment for Cu(In,Ga)Se2 Solar Cells (Cu(In,Ga)Se2 박막의 저온 성장 및 NaF 후속처리를 통한 태양전지 셀 특성 연구)

  • Kim, Seung Tae;Jung, Gwang Seon;Yun, Jae Ho;Park, Byong Guk;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.3 no.1
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    • pp.21-26
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    • 2015
  • High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.