• The Journal of the Korea institute of electronic communication sciences
• /
• v.1 no.1
• /
• pp.8-19
• /
• 2006

The RF Module which can be adjusted for a digital terrestrial and multi standard(DVB-C, ISDB-T, DVB-H) reception is developed. The Module by single conversion does divide a broadband(45MHz~860MHz) broadcasting channels into three-bands(UHF, VHF_HIGH, VHF_LOW) to satisfy some electrical performances such as image signal rejection, phase noise, IF flatness etc and digital reception specifications such as analog and digital adjacent channel protection, co-channel protection which is important in environment with co-existence both analog and digital broadcasting systems.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.31 no.3A
• /
• pp.345-355
• /
• 2006

The RF Module which can be adjusted for a digital terrestrial and multi standard(DVB-C, ISDB-T, DVB-H) reception is developed. The Module by single conversion does divide a broadband($45MHz{\sim}860MHz$) broadcasting channels into three-bands(UHF, VHF_HIGH, VHF_LOW) to satisfy some electrical performances such as image signal rejection, phase noise, IF flatness etc and digital reception specifications such as analog and digital adjacent channel protection, co-channel protection which is important in environment with co-existence both analog and digital broadcasting systems.

• Journal of Satellite, Information and Communications
• /
• v.11 no.3
• /
• pp.6-11
• /
• 2016

In this paper, we studied a spectrum sensing algorithm for the efficient use of available spectrum in RF energy harvesting system combined with backscatter communication. We first looked for white spaces and then, selected low fading channel among white spaces using spectrum sensing algorithm at a transmitter. The transmitter employing the algorithm alleviates signal interference and improves the received signal strength indication through signals transmitted by low fading channel. The proposed RF energy harvesting system combined with backscatter communication is used the transmitter employing the algorithm. As a result of computer simulations, we can find the performance improvements of RF energy harvesting, BER of backscatter communication, and the received signal strength per distance of backscatter tag.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1568-1569
• /
• 2006

An electric probe is a conductor inserted into the plasma, by which plasma density and electron temperature can be deduced from the collected current (I) versus applied voltage (V) to the probe. In RF plasma the I-V characteristics of electric probe is distorted due to the RF fluctuation of plasma potential, so that it is hard to measure the real plasma parameters, especially the electron temperature. To eliminate the RF fluctuation, several compensation methods are developed such as RF compensation probe, peak-to-peak method, asymmetric double probe. By comparing proposed methods, a suitable method is to be introduced in determining electron temperatures in RF plasma.

• 전자공학회논문지 IE
• /
• v.44 no.2
• /
• pp.1-7
• /
• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.11
• /
• pp.1130-1137
• /
• 2009

This paper proposes a new clock routing design for suppressing clock harmonic effects in a Printed Circuit Board (PCB) for a terrestrial Digital Multimedia Broadcasting(DMB) system. Typical crystal reference frequencies that are widely used in DMB tuners are 16.384 MHz, 19.2 MHz, 24.576 MHz. When the high-order harmonic components of these reference frequencies fall near the RF channel frequencies, receiver sensitivity of the tuners is seriously degraded. In this work, we propose a new clock routing design in order to address the clock harmonic coupling issue. The proposed design incorporates two inductors for isolating the clock ground from the main ground, and adopts a new strip line-style routing instead of the conventional microstrip line style routing to minimize the overlap area with the main ground. As a result, the RF sensitivity of the T-DMB tuner is improved by 2 dB.

• Journal of the Korean Ceramic Society
• /
• v.39 no.4
• /
• pp.409-412
• /
• 2002

Under atmospheric pressure, apparently homogeneous and stable plasma can be generated from insulator barrier rf plasma generators each of which has an rf powered cathode and a grounded anode covered with a dielectric insulating material. In order to characterize the generating plasma under atmospheric pressure, some basic characteristic have been evaluated by the Langmuire probe method as well as by optical emission spectroscopy. From the result of plasma characteristics, the generated plasma was verified to be nonequilibrium; T(electron)>T(excitation)>T(gas). High rate Si(100) etching (($1.5{\mu}m$/min) were achieved by using He plasma containing a small amount of $CF_4$.

• Korean Journal of Materials Research
• /
• v.4 no.4
• /
• pp.459-465
• /
• 1994

A-axis oriened YBCO thin flims were grown on $LaAIO_{3}$ single crystal substrate by off-axis rf magnetron sputtering method. We used two kinds of process to get a-axis oriented fi1ms;one-step process and two-step process. In one-step process, films are grown in single step in which substrate temperature( $T_s$) is in the range of $590^{\circ}C$ to $680^{\circ}C$. On the other hand, in two step process a-axis oriented thin film templates i f about 30nm thickness is deposited at low temperature first, and subsequently films are grown at elevated temperature to the final thickness of about 100nm. In the case of one step process($T_s$ ~)$600^{\circ}C$), prefered a-axis orientation is dominant and Cu-rich phases segregate at the surface. Segregations decrease and ($00 \ell$) peaks increase upon increasing $T_s$. The films prepared by two step method appeared to have strong(h00) peaks as the deposition rate increased. Microstructure shows pin holes resulted from mixed phases of a-axis and c-axis oriented films. In both cases of one step and two step process, as TS decreases, prepared films show stronger a-axis orientation. However electrical properties of the films are depressed with lower $T_c$ and wider $\Delta T$ as $T_s$ decreases.

• Progress in Superconductivity
• /
• v.14 no.1
• /
• pp.45-51
• /
• 2012

Microwave metrology for the thickness of metallic or superconductive films provides a new way to measure the film thickness in a non-invasive way by using microwave resonators, with the measurement accuracy affected by standard uncertainties in the resonator quality factor, temperature-dependent resonant frequency and the dimensions of the resonators. Here we study effects of the standard uncertainty in the thickness, $t_{cal}$, of a calibration $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) film on the measured thicknesses, $t_{RF}$, by using a ~ 40 GHz microwave resonator. For the study, we used five YBCO films having the thicknesses of 70 - 360 nm, for which relative standard uncertainties in $t_{RF}$ due to that in $t_{cal}$ are obtained. The standard uncertainty in $t_{cal}$ was determined with the surface roughness of the film taken into account. It appeared that relative standard uncertainty in $t_{cal}$ significantly affects the $t_{RF}$ values, with the values of 1% (5%) in the former resulting in those of 1-2% (5-9%) for the latter at 10 K. Our results show that, for realizing relative standard uncertainties less than 5% in $t_{RF}$ for all the YBCO films, the surface roughness of the calibration films should be small enough to realize a relative standard uncertainty of less than 2.7% in $t_{cal}$.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.9
• /
• pp.1-5
• /
• 2011

In this paper, we investigated the characteristics of AlGaN/GaN HEMTs to optimize their DC and RF characteristics by using a two-dimensional device simulator. First, we analyzed the variation of the DC characteristics with respect to the variation of 2DEG concentrations when varying the Al mole fraction and the thickness of the AlGaN layer. Then, we examined the variation of the RF characteristics by varying the size and the location of the gate, source and drain electrodes. When the Al mole fraction increased from 0.2 to 0.45, both the transconductance and I-V characteristics increased. On the other hand, the I-V characteristics were improved but transconductance was decreased as the thickness of the AlGaN layer increased from 10nm to 50nm. In the RF characteristics, the gate length was found to be the most influential parameter, and the RF characteristics were improved when the gate length was shorten.