• 제목/요약/키워드: t-(v.k.1)

검색결과 2,292건 처리시간 0.041초

Tris(2-cyclohexylaminoethyl)amine-Zn(II) 착물의 안정성 (Stability of Tris(2-cyclohexylaminoethyl)amine-Zn(II) Complex)

  • 신용운;백현숙;양재경;김진은;서무룡
    • 대한화학회지
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    • 제47권2호
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    • pp.121-126
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    • 2003
  • Cyclohexanone,과 tris(2-aminoethyl)amine을 이용하여 Schiff 연기 축합반응으로 tren의 유도체인 tris(2-cyclohexylaminoethyl)amine (L)을 합성하였다. 또한 합성한 tren의 유도체인 tris(2-cyclohexylaminoethyl)amine (L)과 Zn(II) 착물의 열역학적 특성과 안정도 상수, Zn(II)와의 착물 조성비 등을 순환전압전류법과 열량계법으로 측정하였다. Zn(II)과 [Zn(II)-L] 순환전압전류 곡선을 0${sim}$-1.5 V vs. Ag/AgCl의 가전압 범위에서 측정하였다. 금속인 경우, -1.02V와 -0.48V vs. Ag/AgCl에서 각각 환원피이크와 산화피이크가 나타났으며, 금속착물인 경우에는 -1.19V와 -0.45V vs. Ag/AgCl에서 각각 환원피이크와 산화피이크가 나타났다. 또한 피이크 전류(IP)는 주사속도의 평방근 $(v^{1/2})$에 비례하였으며 이것은 전류의 유형이 확산 지배적인 전류임을 나타낸다. 그리고 [Zn-L] 착물에 대해서 전압전류법적으로 구한 안정도상수는 logK$_f$ = 5.8, 결합비는 1:1을 나타내었다. 또한 열량계법적으로 [Zn-L] 착물의 열역학적 파라메타를 조사한 결과, 리간드 L과 Zn(II)는 1:1의 4 배위수를 가지는 착물을 이룬다는 것을 알 수 있었고, 이때 25 ${\circ}$C에서 logK=5.4, ${\Delta}H$= -53.0 kJ/mol, ${\Delta}$G의 값은 -31.1 kJ/mol이었으며 T${\Delta}$S는 -21.9 J/K${\cdot}$mole이었다.

$CuInS_2$ 단결정 박막 성장과 광전기적 특성 (Growth and Optoelectrical Properties for $CuInS_2$ Single Crystal Thin Film)

  • 홍광준;이상열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.230-233
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    • 2004
  • The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

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관형 세라믹 정밀여과와 광촉매 첨가 PES 구의 혼성 수처리 : 질소 역세척 시 유기물 및 흡착, 광산화의 영향 (Hybrid Water Treatment of Tubular Ceramic MF and Photocatalyst Loaded Polyethersulfone Beads : Effect of Organic Matters, Adsorption and Photo-oxidation at Nitrogen Back-flushing)

  • 홍성택;박진용
    • 멤브레인
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    • 제23권1호
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    • pp.61-69
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    • 2013
  • 고도정수처리를 위한 관형 세라믹 정밀여과와 이산화티타늄($TiO_2$) 광촉매 첨가 PES (polyethersulfone) 구의 혼성공정에서 유기물질의 영향 및 정밀여과(MF), PES 구 흡착, 광산화의 역할을 막오염에 의한 저항($R_f$) 및 투과선속(J), 총여과부피($V_T$)를 통해서 비교 및 고찰하였다. 휴믹산의 농도가 증가함에 따라 급격한 막오염으로 인해 $R_f$는 증가하고 J는 감소하였으며, $V_T$는 휴믹산의 농도가 2 mg/L인 조건에서 가장 높았다. 광산화와 흡착의 영향을 알아보기 위해 휴믹산의 농도 4 mg/L와 6 mg/L에서의 결과를 비교하였다. 두 가지 조건에서 공통적으로 정밀여과(MF)만의 단독공정에서 막오염이 급격하게 진행되어 $R_f$값이 가장 높게 나타났고, 총여과부피($V_T$)는 광촉매와 자외선의 혼성공정(MF + $TiO_2$ + UV)에서 가장 높은 값을 나타내었다. 탁도와 유기물질의 평균처리효율은 MF + $TiO_2$ + UV 공정에서 가장 높은 값을 나타내었다.

1,200 V급 Floating Island IGBT의 관한 연구 (Study of the 1,200 V-Class Floating Island IGBT)

  • 강이구
    • 한국전기전자재료학회논문지
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    • 제29권9호
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    • pp.523-526
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    • 2016
  • This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

정제류(錠劑類)의 제제학적(製劑學的) 연구(硏究) -경도(硬度), 마손도(磨損度), 붕해시간(崩解時間) 및 변동계수(變動係數)에 대(對)하여 (Pharmaceutical study on the Compressed Tablets. Hardness, Friability, Disintegration time and Coefficient of Variance of Compressed tablets)

  • 김수억;서성훈;이현우
    • Journal of Pharmaceutical Investigation
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    • 제2권2호
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    • pp.18-33
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    • 1972
  • Pharmaceutical Study on the Compressed tablets. Hardness, Friability, Disintegration time and Coefficient of Variance of Compressed tablets. Soo Uck Kim, Sung Hoon seo and Hyun Woo Lee (Department of Pharmaceutics, College of Pharmacy, Kyung Hee University) In order to know Hardness, Friability, Disintegration time and Coefficient of variance of the pharmaceutical tablets the 135 tablets sampled from market were tested in the paper. The samples tested in this paper were as follows: Antipyretics and Analgetics 41 Stomach and Digestives 22 Antituberculars 19 Vitamins 12 Sulfa drugs 9 Others (Antihistaminics etc) 32 Total 135 The results of the investigation are shown in table 1-8, Fig 1-Fig 6. Mean values of Hardness, Friability, Disintegration time and Coefficient of variance in each pharmaceutical preparation are as follows. Antipyretics and Analgetics : Hardness(kg) = 5.83 Antipyretics and Analgetics : Friabil.(%) = 0.82 Antipyretics and Analgetics : Disint.t.(min) = 5.28' Antipyretics and Analgetics : Coeff. of V.(%) = 2.90 Stomach and Digestives : Hardness(kg) = 4.11 Stomach and Digestives : Friabil.(%) = 0.71 Stomach and Digestives : Disint.t.(min) = 3.43' Stomach and Digestives : Coeff. of V.(%) = 2.76 Antituberculars : Hardness(kg) = 4.78 Antituberculars : Friabil.(%) = 0.52 Antituberculars : Disint.t.(min) = 4.32' Antituberculars : Coeff. of V.(%) = 2.99 Vitamins : Hardness(kg) = 1.60 Vitamins : Friabil.(%) = 0.43 Vitamins : Disint.t.(min) = 4.10' Vitamins : Coeff. of V.(%) = 3.19 Sulfa drugs : Hardness(kg) = 4.77 Sulfa drugs : Friabil.(%) = 0.37 Sulfa drugs : Disint.t.(min) = 3.10' Sulfa drugs : Coeff. of V.(%) = 2.09 Others : Hardness(kg) = 2.40 Others : Friabil.(%) = 0.66 Others : Disint.t.(min) = 2.19' Others : Coeff. of V.(%) = 3.10 The following summeries might be shown; 1. Ranges of Hardness, Friability, Disintegration time and Coefficient of variance are respectively 1.6 to 5.38 kg, 0.37 to 0.82%, 2 minut 19 second to 5 minut 28 second and 2.09 to 3.10%. 2. According to the results, it could be indicated that higher Hardness shows lower Friability. 3. Against the general conception between Hardness and Disintegration time, higher Hardness shows lower Disintegration time. 4. It seems that higher mean weight shows lowcr Coefficient variance.

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Separative Power of an Optimised Concurrent Gas Centrifuge

  • Bogovalov, Sergey;Borman, Vladimir
    • Nuclear Engineering and Technology
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    • 제48권3호
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    • pp.719-726
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    • 2016
  • The problem of separation of isotopes in a concurrent gas centrifuge is solved analytically for an arbitrary binary mixture of isotopes. The separative power of the optimised concurrent gas centrifuges for the uranium isotopes equals to ${\delta}U=12.7(V/700m/s)^2(300K/T)(L/1m)kg{\cdot}SWU/yr$, where L and V are the length and linear velocity of the rotor of the gas centrifuge and T is the temperature. This equation agrees well with the empirically determined separative power of optimised counter-current gas centrifuges.

The Tunnel Number One Knot with Bridge Number Three is a (1, 1)-knot

  • Kim, Soo Hwan
    • Kyungpook Mathematical Journal
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    • 제45권1호
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    • pp.67-71
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    • 2005
  • We call K a (1, 1)-knot in M if M is a union of two solid tori $V_1\;and\;V_2$ glued along their boundary tori ${\partial}V_1\;and\;{\partial}V_2$ and if K intersects each solid torus $V_i$ in a trivial arc $t_i$ for i = 1 and 2. Note that every (1, 1)-knot is a tunnel number one knot. In this article, we determine when a tunnel number one knot is a (1, 1)-knot. In other words, we show that any tunnel number one knot with bridge number 3 is a (1, 1)-knot.

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NUMERICAL CALCULATION OF TWO FLUID SOLAR WIND MODEL

  • KIM S.-J.;KIM K.-S.;MOON Y.-J.;CRO K.-S.;PARK Y. D.
    • 천문학회지
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    • 제37권1호
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    • pp.55-59
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    • 2004
  • We have developed a two fluid solar wind model from the Sun to 1 AU. Its basic equations are mass, momentum and energy conservations. In these equations, we include a wave mechanism of heating the corona and accelerating the wind. The two fluid model takes into account the power spectrum of Alfvenic wave fluctuation. Model computations have been made to fit observational constraints such as electron($T_e$) and proton($T_p$) temperatures and solar wind speed(V) at 1 AU. As a result, we obtained physical quantities of solar wind as follows: $T_e$ is $7.4{\times}10^5$ K and density(n) is $1.7 {\times}10^7\;cm^{-3}$ in the corona. At 1 AU $T_e$ is $2.1 {\times} 10^5$ K and n is $0.3 cm^{-3}$, and V is $511 km\;s^{-1}$. Our model well explains the heating of protons in the corona and the acceleration of the solar wind.