• 한국기계가공학회지
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• 제8권3호
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• pp.62-67
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• 2009

Pt thin films on Cr or Ti interlayer were deposited onto a tungsten carbide(WC) substrate by the ion beam assisted DC magnetron sputtering. The various atomic percent of Cr and Ti underneath of the Pt films were prepared to examine the total thin film characteristics. The microstructure and surface analysis of the specimen were conducted by using the SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Pt thin film also were examined. The interlayer of pure Ti was formed with 40 nm thickness while that of pure Cr was done with 50 nm as standard reference. The growth rate of either Cr or Ti thin film was almost same under the same deposition conditions. The SEM images showed that anisotropic grain of Pt thin films consisting of dense columnar structures irrespectively grew from the different target compositions. The values of hardness and adhesion strength of Cr/Pt thin film coated on a WC substrate were higher than those of Ti/Pt thin film.

• 한국세라믹학회지
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• 제49권6호
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• pp.556-560
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• 2012

Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.

• 한국진공학회지
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• 제11권4호
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• pp.240-248
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• 2002

결정성이 좋을 것으로 기대되는 Fe이 도핑된 $Fe_{x}Ti_{l-x}O_2$박막 (x=0.07과 0.16)을 rutile $TiO_2$(110) 기판위에 산소 플라즈마 적층 성장 방법으로 성장시켰다. 도핑되는 Fe의 함량에 따른 표면 특성을 규명하기 위하여 박막 성장은 같은 조건에서 이루어졌다. 여러 가지의 표면분석법을 이용하여 성장된 박막의 표면 특성을 규명하였다. $Fe_{x}Ti_{l-x}O_2$박막에 존재하는 Ti의 산화상태는 +4 이었고 Fe의 경우는 +2와 +3의 산화상태가 섞여있었으며 Fe의 함량이 높은 $Fe_{0.16}Ti_{0.84}O_2$박막에서 $Fe^{3+}$ 이온의 함량이 더 높은 것으로 나타났다. $Fe_{0.07}Ti_{0.93}O_2$박막은 기판과 유사한 평탄한 표면에 막대형과 원통형의 높은 island 형태로 성장되었다. $Fe_{0.16}Ti_{0.84}O_2$박막은 $Fe_{0.07}Ti_{0.93}O_2$ 박막보다는 평탄하지만 적은 island들이 뭉쳐있는 다소 거칠은 표면을 한 다결정성 형태로 성장되어 Fe의 함량에 따라 morphology가 다르게 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.306-306
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• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

• 한국재료학회지
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• 제21권11호
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• pp.634-638
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• 2011

We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860$^{\circ}C$. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 ${\mu}m$ ${\times}$ 2 ${\mu}m$ area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• 열처리공학회지
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• 제29권3호
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• pp.124-131
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• 2016

GaN and InN epilayers with nucleation layer (LT-buffer) were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). As-grown and annealed GaN and InN nucleation layers grown at various growth condition were observed by reflection high-energy electron diffraction (RHEED). When temperature of effusion cell for III source was very low, diffraction pattern with cubic symmetry was observed and zincblende nucleation layer was flattened easily by annealing. As cell temperature increased, LT-GaN and LT-InN showed typical diffraction pattern from wurtzite structure, and FWHM of (10-12) plane decreased remarkably which means much improved crystalline quality. Diffraction pattern was changed to be from streaky to spotty when plasma power was raised from 160 to 220 W because higher plasma power makes more nitrogen adatoms on the surface and suppressed surface mobility of III species. Therefore, though wurtzite nucleation layer was a little hard to be flattened compared to zincblende, higher cell temperature led to easier movement of III surface adatoms and resulted in better crystalline quality of GaN and InN epilayers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.135-136
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• 2012

Carbon atoms near the surface of W(110) induce reconstructions such as $R(15{\times}12)$ -C/W(110) which consists of two characteristic parts, one square shaped and bright protrusion and two smaller ones. In the atomic resolution STM image, the bigger protrusion shows the periodicities of clean W(110), indicating that it is almost carbon poor region. The smaller protrusion contains hexagonal carbide surface layer of ${\alpha}$-W2C on W(110). Employing this carburized W(110) as templates, we grow Co and Fe clusters of less than ten atoms. Due to the selectivity of bonding sites, growth of larger cluster is highly unfavorable for Co and the size of clusters is very uniform. Since Co atoms prefer to sit on the bigger protrusion rather than smaller one, Co cluster can be arranged one-dimensionally in $R(15{\times}12)$-C/W(110) with quite uniform size distribution. However, Fe clusters sit on both sites without favored site, but still with uniform size distribution. On the other hand, Fe clusters can be grown with quasi one-dimensional order in $R(15{\times}3)$-C/W(110), which consists of only smaller protrusions. We investigate the magnetic properties of the ordered nano-sized clusters. Experiments using XMCD reveals little magnetic moment of Co cluster on $R(15{\times}12)$-C/W(110). This observation is consistent with the predictions of our first principles calculations that small Co clusters can be nonmagnetic or antiferromagnetic with low mean magnetic moment per atom.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• 대한치과보철학회지
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• 제47권4호
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• pp.376-384
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• 2009

연구목적: 본 연구에서는 양극산화 임플란트 표면에 서로 다른 두 가지 방법, Ion beam-assisted deposition (IBAD)법과 Sol-gel법으로 Ca-P 코팅한 임플란트 시편에 골모세포를 배양하였을 때 세포의 증식, 분화, 형태에 어떠한 영향을 미치는지 조사하고자 한다. 연구재료 및 방법: 지름 10 mm, 두께 2 mm 인 상업용 순수 titanium grade IV 재질의 디스크를 제작하였고, 모든 시편은 acetone, 70% ethanol, 증류수에서 각각 10분씩 세척 후 건조하였다. 모든 표면은 300 V의 constant voltage하에서 양극 산화 (anodized)시킨다. 실험군은 양극산화 임플란트 표면에 각각 IBAD법과 Solgel법으로 Ca-P 코팅하였다. 각 표면의 미세표면 거칠기(Ra)를 측정하였고, SEM을 통해 표면의 형상을 관찰하였다. 골모세포을 배양한 후 각 표면군의 세포 증식, ALP 활성도 및 RT-PCR를 통한 골세포 분화 능력 검증을 하였으며, SEM을 통해 세포의 형상도 확인하였다. 통계분석은 SPSS (version 12.0) 프로그램을 이용하여 Kruskal-Wallis Test로 각 군의 유의성을 검증하였다 ($\alpha$=0.05). 결과: IBAD법으로 Ca-P 코팅한 표면이 Sol-gel법으로 Ca-P 코팅한 표면보다 표면 거칠기 (Ra) 값이 더 크게 나타났다 (P<.05). IBAD법으로 Ca-P 코팅한 표면이 Sol-gel법으로 Ca-P 코팅한 표면 보다 세포 증식이 더 활발하고 골세포 조기 분화 정도를 확인 할 수 있는ALP 활성도 또한 더 높게 나타났다 (P<.05). SEM 관찰 결과IBAD법으로 Ca-P 코팅한 표면에 골모세포들이 친화성을 띄면서 안정적으로 부착되었다. 결론: IBAD법으로 Ca-P 코팅한 표면이 Sol-gel법으로 Ca-P 코팅한 표면보다 더 우수한 세포 반응을 보였다. IBAD법으로 Ca-P 코팅한 표면의 세포들은 증식이 잘 이루어지고 잘 분화된 골모세포 형상을 보이고 ALP 활성도 또한 높아 골 형성을 증가시켜 높은 골-임플란트 접촉을 보일 것이다.