Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2011.02a
- /
- Pages.185-185
- /
- 2011
Growth of ZnTe Thin Films by Oxygen-plasma Assisted Pulsed Laser Deposition
- Pak, Sang-Woo (Quantum-Function Research Laboratory and Department of Physics, Hanyang University) ;
- Suh, Joo-Young (Quantum-Function Research Laboratory and Department of Physics, Hanyang University) ;
- Lee, Dong-Uk (Quantum-Function Research Laboratory and Department of Physics, Hanyang University) ;
- Kim, Eun-Kyu (Quantum-Function Research Laboratory and Department of Physics, Hanyang University)
- Published : 2011.02.09
Abstract
ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/