• Nuclear Engineering and Technology
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• v.33 no.2
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• pp.241-253
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• 2001

Under severe accidents, the pressure and temperature response has an important role for the integrity of a nuclear power plant containment. The history of the pressure and temperature is characterized by the amount and state of steam/air mixture in a containment. Recently, the heat transfer rate to the structure surface is supposed to be increased by the wavy interface formed on condensate film. However, in the calculation by using CONTAIN code, the condensation heat transfer on a containment wall is calculated by assuming the smooth interface and has a tendency to be underestimated for safety. In order to obtain the best- estimate heat transfer calculation, we investigated the condensation heat transfer model in CONTAIN 1.2 code and adopted the new forced convection correlation which is considering wavy interface. By using the film tracking model in CONTAIN 1.2 code, the condensate film is treated to consider the effect of wavy interface. And also, it was carried out to investigate the effect of the different cell modelings - 5-cell and 10-cell modeling - for KNGR(Korean Next Generation Reactor) containment phenomena during a severe accident. The effect of wavy interface on condensate film appears to cause the decrease of peak temperature and pressure response . In order to obtain more adequate results, the proper cell modeling was required to consider the proper flow of steam/air mixture.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.79-80
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• 2013

The purpose of this study was to investigate $2^{nd} $nanotube formed surface observation of the Ti-25Ta-xZr alloys using ATO(anodic titanium oxide) technique. Ti-25Ta-xZr alloy was anodized in 1M $H_3PO_4$ electrolytes containing 0.8 Wt. % NaF at room temperature. After formation of nanotube was achieved out, nanotube was eliminated, and then anodization was carried out repeatedly. The microstructures, phase transformation, and morphology of nanotubular Ti-25Ta-xZr alloys and process of nanotube growth by using ATO method was examined by optical microscopy (OM), X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM). The ${\alpha}$ phase and ${\beta}$ phases were affected to form the second nanotube morphology of Ti-25Ta-xZr alloys.

• Bulletin of the Korean Chemical Society
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• v.29 no.10
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• pp.1983-1987
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• 2008

This study demonstrates the electrochemical conversion of the synthetic procedure of monolayer-protected clusters using a thin toluene layer over an edge plane pyrolytic graphite electrode. A thin toluene layer with a thickness of 0.31 mm was coated over the electrode and an immiscible liquid/liquid water/toluene interface was introduced. The transfer of the tetrachloroaurate ($AuCl_4^-$) ions into the toluene layer interposed between the aqueous solution and the electrode surface was electrochemically monitored. The $AuCl_4^-$ ions initially could not move through into the toluene layer, showing no reduction wave, but, in the presence of the phase transfer reagent, tetraoctylammonium bromide (TOABr), a cathodic wave at 0.23 V vs. Ag/AgCl was observed, indicating the reduction of the transferred $AuCl_4^-$ ions in the toluene layer. In the presence of dodecanethiol together with TOABr, a self-assembled monolayer was formed over the electro-deposited metallic gold surface. The E-SEM image of the surface indicates the formation of a highly porous metallic gold surface, rather than individual nanoparticles, over the EPG electrode.

• Journal of computational fluids engineering
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• v.21 no.1
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• pp.110-116
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• 2016

The present study numerically investigated the deformation of the interface of two-phase fluids flow in a blast furnace. To simulate three-dimensional(3D) incompressible viscous two-phase flow in the furnace filled with the air and molten iron, the volume of fluid(VOF) method based on the finite volume method has been utilized. In addition, the porous medium with the porosity has been considered as the bed of the particles such as cokes and char etc. For the comparison, the single phase flow and the two-phase flow without the porosity have been simulated. The two-phase flow without porosity condition revealed the smooth parabolic profile of the free surface near the outlet. However, the free surface under the porosity condition formed the viscous finger when the free surface was close to the outlet. This viscous finger accelerated the velocity of the free surface falling and the outflow velocity of the fluids near the outlet.

• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.568-571
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• 2008

The computation of moving interface by the level set method typically requires reinitializations of level set function. An inaccurate estimation of level set function ${\phi}$ results in incorrect free-surface capturing and thus errors such as mass gain/loss. Therefore, accurate and robust reinitialization process is essential to the free-surface flows. In the present paper, we pursue further development of the reinitialization process, which evaluates directly level set function ${\phi}$ using a normal vector in the interface without solving the re-distancing equation of hyperbolic type. The Taylor-Galerkin approximation and P1P1splitting FEM are adopted to discretize advection equation of the level set function and the Navier-Stokes equation, respectively. Advection equation of free surface and re-initialization process are validated with benchmark problems, i.e., a broken dam flow and time-reversed single vortex flow. The simulation results are in good agreement with the existing results.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.32 no.10
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• pp.754-760
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• 2008

Computation of moving interface by the level set method typically requires the reinitialization of level set function. An inaccurate estimation of level set function $\phi$ results in incorrect free-surface capturing and thus errors such as mass gain/loss. Therefore, an accurate and robust reinitialization process is essential to the simulation of free-surface flows. In the present paper, we pursue further development of the reinitialization process, which evaluates level set function directly using a normal vector on the interface without solving there-distancing equation of hyperbolic type. The Taylor-Galerkin approximation and P1P1 splitting/SUPG (Streamline Upwind Petrov-Galerkin) FEM are adopted to discretize advection equation of the level set function and the incompressible Navier-Stokes equation, respectively. Advection equation and re-initialization process of free surface capturing are validated with benchmark problems, i.e., a broken dam flow and timereversed single vortex flow. The simulation results are in good agreement with the existing results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1305-1307
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• 2007

We show that the electrical properties of organic thinfilm transistors(OTFTs) can be enhanced by controlling the morphology of interface between screen printed electrodes and gate dielectrics. Modified surface of the insulator layer($SiO_2$) affect on the interface energy of electrode on $SiO_2$ layer. Contact angle measurement and FT-IR spectrum shows that the interface is properly modified. OTFTs device with high efficiency has been realized through modification of interface layer.

• Transactions of Materials Processing
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• v.12 no.4
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• pp.370-375
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• 2003

Determination of the interface heat transfer coefficient was investigated in non-isothermal bulk forming of glass-coated Ti-6Al-4V. FE analysis and experiments were conducted. Equipment consisting of AISI Hl3 die was instrumented with thermocouples located at sub-surface of the bottom die. Die temperature changes were investigated in related to the process variables such as reduction, lubricant and initial die temperature. The calibration approach based on heat conduction and FE analysis using an inverse algorithm were used to evaluate the interface heat transfer between graphite-lubricated die and glass-coated workpiece. The coefficients determined were affected mainly by the contact pressure. The validation of the coefficients was made by the comparison between experimental data and FE analysis results.