• Journal of radiological science and technology
• /
• 제27권2호
• /
• pp.45-50
• /
• 2004

Synthesis diamond films have been deposited on the molybdenum substrates using an microwave plasma enhanced chemical vapor deposition method. The effects of deposition time, surface morphology, infrared transmittance and Raman scattering have been studied. Diamond deposited on molybdenum substrate for 100 hours by MW plasma CVD from $CH_4-H_2-O_2$ gas mixture had good crystallity with $100[{\mu}m]$ thickness needed for radiation detector. Diamond radiation detector of M-I-M type was made and the current of radiation detector was increased by increasing X-ray dose.

• Polymer(Korea)
• /
• 제33권1호
• /
• pp.91-95
• /
• 2009

We fabricated the electromagnetic (EM) noise absorber films for high temperature use by blending a soft magnetic powder with poly(amide imide) (PAI). The EM noise absorber films of PAI/soft magnet composite were prepared by casting the solution of poly(amide amic acid)/soft magnet powder into glass substrate with casting applicator device and then thermal imidization. The obtained films were fully characterized and their physical properties including thermal behavior, thermal stability and mechanical properties were studied. The EM noise absorption ability was also investigated using micro-strip line method. At 1 GHz, the power loss of composite film with 150 ${\mu}m$ thickness was about 25%.

• Journal of the Korean Vacuum Society
• /
• 제9권3호
• /
• pp.249-253
• /
• 2000

We have analyzed electrical characteristics of the amorphous $MgTiO_3$thin films deposited by pulsed laser deposition (PLD) technique with the temperature of 400~$500^{\circ}C$. The electrical characteristics of $MgTiO_3$films heavily depend on the deposition temperature. We speculate that the density of anomalous positive charge (APC) substantially increases as the deposition temperature lowers, causing the HF C-V curves shift to the direction of the negative gate voltage. We further observed that both the degree of C-V shift as a function of the deposition temperature and the density of APC were minimized by the use of $SiO_2$with thickness of approximately 100 $\AA$ between $MgTiO_3$films and the Si substrate.

• KSTLE International Journal
• /
• 제6권2호
• /
• pp.39-44
• /
• 2005

Friction and wear properties of the Boron carbide ($B_{4}C$) coating 100 nm thickness were studied under various relative humidity (RH). The boron carbide film was deposited on silicon substrate by DC magnetron sputtering method using $B_{4}C$ target with a mixture of Ar and methane ($CH_4$) as precursor gas. Friction tests were performed using a reciprocation type friction tester at ambient environment. Steel balls of 3 mm in diameter were used as counter-specimen. The results indicated that relative humidity strongly affected the tribological properties of boron carbide coating. Friction coefficient decreased from 0.42 to 0.09 as the relative humidity increased from $5\%$ to $85\%$. Confocal microscopy was used to observe worn surfaces of the coating and wear scars on steel balls after the tests. It showed that both the coating surface and the ball were significantly worn-out even though boron carbide is much harder than the steel. Moreover, at low humidity ($5\%$) the boron carbide showed poor wear resistance which resulted in the complete removal of coating layer, whereas at the medium and high humidity conditions, it was not. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analyses were performed to characterize the chemical composition of the worn surfaces. We suggest that tribochemical reactions occurred during sliding in moisture air to form boric acid on the worn surface of the coating. The boric acid and the tribochemcal layer that formed on steel ball resulted in low friction and wear of boron carbide coating.

• Journal of the Korean Vacuum Society
• /
• 제20권3호
• /
• pp.182-188
• /
• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.381-381
• /
• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Korean Journal of Materials Research
• /
• 제4권7호
• /
• pp.783-791
• /
• 1994

Piezoelectric ZnO thin films were deposited on 7059 glass substrate by rf magnetron sputtering. The effects of deposition parameter, such as rf power, gas pressure and $O_{2}$/Ar gas ratio, on the crystallinity and electrical properties of the deposited ZnO thin films were studied. It was found that the deposition rate was higher than the previously reported values. ZnO films were suitable for SAW filter since a standard deviation of XRD (002) peak rocking curve was less than $6^{\circ}$. ZnO thin films, which were deposited at $O_{2}$/Ar ratio larger than 25%, showed high resistance. SAW filter was fabricated using ZnO film, of which thickness was 0.25 of the wavelength of the propatating surface acoustic wave. The measured frequency response was consistent with the calculated one. The SAW filter had center frequency 39.08 MHz, phase velocity 2501 m/sec and insertion loss 29 dB.

• Korean Journal of Materials Research
• /
• 제8권4호
• /
• pp.359-361
• /
• 1998

Visible photoluminescence(PU was observed from hydrogenated amorphous silicon deposited on silicon(a-Si : H/Si) using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR- PECVD) with silane ($SiH_{4}$) gas as the reactant source. The PL spectra from a-Si : H/Si were very similar to those from porous silicon. Hydrogen contents of samples annealed under oxygen atmosphere for 2minutes at $500^{\circ}C$ by rapid thermal annealing were reduced to 1~2%, and the samples did not show visible PL, indicating that hydrogen has a very important role in the PL process of a- Si : H/Si. As the thickness of deposited a-Si : H film increased, PL intensity decreased. The visi¬ble PL from a-Si: H deposited on Si by ECR-PECVD with $SiH_{4}$ . is suggested to be from silicon hydrides formed at the interface between the Si substrate and the deposited a-Si : H film during the deposition.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• 제12권9호
• /
• pp.4095-4100
• /
• 2011

In this paper, a log periodic bow-tie dipole array (LPBDA) antenna for UWB communications is investigated. Bow-tie shaped dipole elements are used instead of general dipole elements for LPDA antennas and the input reflection coefficient and realized gain characteristics of the LPBDA as a function of a flare angle are analyzed. It turns out that as the flare angle of the bow-tie dipole elements is increased, the lowest operating frequency is shifted toward lower frequency and the operating frequency band is increased, but the average gain is decreased. However, the gain variation of the LPBDA is much decreased and the front-back ratio is improved compared to the LPDA. Standard LPDA and LPBDA with a flare angle of 13 degrees are fabricated on an FR4 substrate with a dielectric constant of 4.4 and a thickness of 1.6 mm. Measured gain for the LPDA ranges from 4 to 6.5 dBi at 3.1 to 10.6 GHz band, while that for the LPBDA is in the range of 4.2 to 5 dBi.

• Journal of Advanced Navigation Technology
• /
• 제8권2호
• /
• pp.184-190
• /
• 2004

A feedforward linear power amplifier (FLPA) has been developed for UHF-band RFID reader applications. The main and error amplifiers are composed of a 2 stage so that linearity of the FLPA can be improved. The FLPA has been implemented on an FR-4 substrate (Er=4.7 and thickness=0.8 mm) with 3-dB and 10-dB hybrid couplers for input/output power divider and combiner. For 2-tone measurement (input level=-11 dBm at $f_1$=915 MHz and $f_2$=916 MHz), the FLPA exhibits a -18.52 dBm of $IMD_3$, which indicates that $IMD_3$ cancellation with feedforward loop is more than 27 dB. From 890 to 960 MHz, 1-dB gain compression output power and power gain of the FLPA are higher than 30 dBm and 40 dB, respectively.