• East Asian mathematical journal
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• v.40 no.1
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• pp.1-23
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• 2024

Let M be a semi-invariant submanifold of codimension 3 with almost contact metric structure (𝜙, 𝜉, 𝜂, g) in a complex space form M_n+1(c). We denote by A, K and L the second fundamental forms with respect to the unit normal vector C, D and E respectively, where C is the distinguished normal vector, and by R_𝜉 = R(𝜉, ·)𝜉 the structure Jacobi operator. Suppose that the third fundamental form t satisfies dt(X, Y) = 2𝜃g(𝜙X, Y) for a scalar 𝜃(≠ 2c) and any vector fields X and Y , and at the same time R_𝜉K = KR_𝜉 and ∇_{𝜙∇𝜉𝜉}R_𝜉 = 0. In this paper, we prove that if it satisfies ∇_𝜉R_𝜉 = 0 on M, then M is a real hypersurface of type (A) in M_n(c) provided that the scalar curvature $\bar{r}$ of M holds $\bar{r}-2(n-1)c{\leq}0$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.136-142
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• 2022

The crystal structure, grain growth behavior, and dielectric properties of BaTiO₃ have been studied with the addition of Dy₂O₃. The powders were synthesized at ratios of (100-x)BaTiO₃-xDy₂O₃ (mol%, x = 0, 0.5, 1.0, 2.0) by a conventional solid-state synthesis, and the powder compacts were sintered at 1250℃ for 2 hours in air. As the amount of added Dy₂O₃ was increased, the crystal structure of the sintered samples changed from a tetragonal to a pseudo-cubic structure, and the tetragonality decreased. In addition, a secondary phase of Ba₁₂Dy_4.67Ti₈O₃₅ appeared when Dy₂O₃ was added. The average grain size after sintering decreased and abnormal grains appeared as the amount of Dy₂O₃ increased. It can be explained that the grain growth behavior of the Dy₂O₃ added-BaTiO₃ occurs due to the two-dimensional nucleation and growth, and is governed by the interface reaction. Further, the correlation between crystal structure, microstructure, and dielectric properties was discussed.

• Journal of IKEEE
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• v.28 no.1
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• pp.110-115
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• 2024

This paper analyzed the V_th (Threshold Voltage) variations in 3D NAND Flash memory with tapered O/N/O (Oxide/Nitride/Oxide) structure and O/N/F (Oxide/Nitride/Ferroelectric) structure, where the blocking oxide is replaced by ferroelectric material. With a tapering angle of 0°, the O/N/F structure exhibits lower resistance compared to the O/N/O structure, resulting in reduced V_th variations in both the upper and lower regions of the WL (Word Line). Tapered 3D NAND Flash memory shows a decrease in channel area and an increase in channel resistance as it moves from the upper to the lower WL. Consequently, as the tapering angle increases, the V_th decreases in the upper WL and increases in the lower WL. The tapered O/N/F structure, influenced by V_fe proportional to the channel radius, leads to a greater reduction in V_th in the upper WL compared to the O/N/O structure. Additionally, the lower WL in the O/N/F structure experiences a greater increase in V_th compared to the O/N/O structure, resulting in larger V_th variations with increasing tapering angles.

• Kyungpook Mathematical Journal
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• v.63 no.2
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• pp.287-311
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• 2023

In this paper, we introduce the notion of cyclic structure Jacobi semi-symmetric real hypersurfaces in the complex hyperbolic quadric Q^m* = SO⁰_2,m/SO₂SO_m. We give a classifiction of when real hypersurfaces in the complex hyperbolic quadric Q^m* having 𝔄-principal or 𝔄-isotropic unit normal vector fields have cyclic structure Jacobi semi-symmetric tensor.

• Analytical Science and Technology
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• v.20 no.5
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• pp.448-451
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• 2007

A new bis(dicyclohexylammonium) chromate dihydrate complex, $[(C_6H_{11})_2NH_2]_2[CrO_4]{\cdot}2H_2O$, (I), has been synthesized and its structure analyzed by FT-IR, EDS, elemental analysis, ICP-AES, and single crystal X-ray diffraction methods. The Cr(VI) complex (I) is tetragonal system, I${\bar{4}}$2d space group with a = 12.5196(1), b = 12.5196(1), c = $17.3796(3){\AA}$, a = ${\beta}$ = ${\gamma}$ = $90^{\circ}$, V = $2724.09(6){\AA}^3$, Z = 4. The crystal structure of complex (I) consists of tetrahedral chromate $[CrO_4]^{2-}$ anion, two organic dicyclohexylammonium $[(C_6H_{11})_2NH_2]^+$ cations and two lattice water molecules. The chromate anion and protonated dicyclohexylammonium cation is mainly constructed through the ionic bond. The cyclohexylammonium rings of the dicyclohexylammonium cation take the chair form and vertical configuration with each other. The N-H${\cdot}$O and O-H${\cdot}$O hydrogen bond networks between the $N_{dicyclohexylammonium}$, $O_{water}$ and $O_{chromate}$ atom lead to self-assembled molecular conformation and stabilize the crystal structure.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.2
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• pp.47-53
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• 1991

Recrystallization behaviors of ordered and disordered structures in $Ll_2$ type $Ni_3Fe$ alloy were studied through hardness measurement and differential thermal analysis. When the disordered structure was isothermally aged at $480^{\circ}C$ below order-disorder transition temperature, the hardness of the structure was increased due to progressive ordering with increasing aging time. The hardness of the disordered structure was increased rapidly with increasing deformation degree up to 10%, and then gradually increased with further deformation degree. while the hardness of the ordered structure was increased rapidly with increasing deformation degree up to 10%, showing a constant hardness value up to 50% and gradually decreased with further deformation degree. The hardness of the ordered structure was higher than that of the disordered structure at all same deformation degrees. The recrystallization temperature of the ordered and disordered structures were decreased with increasing deformation degree. At the same deformation degrees, the recrystallization temperature of the ordered structure was lower than that of the desordered structure.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1745-1747
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• 2011

• Bulletin of the Korean Chemical Society
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• v.29 no.11
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• pp.2299-2302
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• 2008

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1416-1418
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• 2007