• 제목/요약/키워드: sub-micron

검색결과 312건 처리시간 0.023초

Submicron CMOSFET에서 기판 방향에 대한 소자 성능 의존성 분석

  • 박예지;한인식;박상욱;권혁민;복정득;박병석;이희덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.7-7
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    • 2009
  • In this paper, we investigated the dependence of HCI (Hot Carrier Immunity) degradation and device performance on channel orientation in sub-micron PMOSFET. Although device performance ($I_{D.sat}$ vs. $I_{Off}$) was improved as the transistor angle increased HC immunity was degraded. Therefore, consideration of reliability characteristics as well as dc device performance is highly necessary in channel stress engineering of next generation CMOSFETs.

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초미세 메모리 커패시터의 전극형성을 위한 식각 기술 (Patterning issues for the fabrication of sub-micron memory capacitors′ electrodes)

  • 김현우
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.160-160
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    • 2003
  • This paper describes some of the key issues associated with the patterning of metal electrodes of sub-micron (especially at the critical dimension (CD) of 0.15 $\mu\textrm{m}$) dynamic random access memory (DRAM) devices. Due to reactive ion etching (RIE) lag, the Pt etch rate decreased drastically below the CD of 0.20 $\mu\textrm{m}$ and thus the storage node electrode with the CD of 0.15 $\mu\textrm{m}$ could not be fabricated using the Pt electrodes. Accordingly, we have proposed novel techniques to surmount the above difficulties. The Ru electrode for the stack-type structure is introduced and alternative schemes based on the introduction of the concave-type structure using Pt or Ru as an electrode material are outlined.

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Capacitance - Voltage 방법을 이용한 MOSFET의 유효 채널 길이 추출 (Extracting the Effective Channel Length of MOSFET by Capacitance - Voltage Method.)

  • 김용구;지희환;박성형;이희덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.679-682
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    • 2003
  • Improvement in MOS fabrication technology have led to high-density high-performance integrated circuits with MOSFET channel lengths in the sub-micron range. For devices of the size, transistor characteristics become highly sensitive to effective channel length. We propose a new approach to extract the effective channel length of MOSFET by Capacitance-Voltage (C-V) method. Gate-to-Source, Drain capacitance ( $C_{gsd}$) are measured and the effective channel length can be extracted. In addition, compared to l/$\beta$ method and Terada method, which has been point out that it fails to extract the accurate effective channel length of the devices, we prove that our approach still works well for the devices with down to sub-micron regime.e.

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초미립 텅스텐 분말을 이용한 활성소결에서 Ni 함량의 영향 (Effect of Ni Content on Activated Sintering of Sub-micron Tungsten Powder Compact)

  • 원동묵;김영한;김영도;문인형
    • 한국분말재료학회지
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    • 제8권1호
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    • pp.26-34
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    • 2001
  • In the present study, the effect of Ni content on densification and grain growth in Ni doped W compacts was investigated by using the dilatometric analysis. The Ni-doped W compacts with various amount of Ni activator from 0.02 to 0.4 wt% were sintered in hydrogen atmosphere up to 140$0^{\circ}C$. As the amount of Ni and heating rates, the Ni-doped W compacts show a greatly different dilatometric behavior during the sintering. The sintered specimen was densified over 98% of theoretical density by adding only 0.06 wt% Wi in sub-micron W powder and the appropriate heating rate. It was also observed that the microstructure development strongly depended on the change of the Ni amount. In addition, it was found that the critical content of Ni showing large grain growth in microstructure was below 0.1 wt%.

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질화물 계 발광다이오드의 광추출 향상을 위한 투명전극 패터닝 공정

  • 변경재;홍은주;황재연;이헌
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2008년도 추계학술대회 초록집
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    • pp.79-80
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    • 2008
  • 최근 질화물 계 발광다이오드의 광추출효율을 향상시키기 위하여 발광다이오드의 발광면을 texturing하는 연구가 진행되고 있다. 본 연구에서는 직접 패터닝 방식인 나노 임프린팅 공정을 이용하여 blue 발광다이오드의 indium tin oxide (ITO) 투명전극 층에 sub-micron 크기의 hole이 주기적으로 정렬된 구조의 폴리머 패턴을 형성하였으며 임프린팅 공정 후 건식 식각 공정을 통해서 ITO 층을 식각하였다. 그 결과 ITO 투명전극 층에 발광다이오드의 광추출효율을 향상시키기 위한 sub-micron 급의 주기적인 hole 패턴이 형성되었다.

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Micro-Lithography의 광학적 원리 (Optical Principle of Microlithography system)

  • 이성묵;임동규
    • 한국광학회:학술대회논문집
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    • 한국광학회 1991년도 광학 및 양자전자학 워크샵
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    • pp.109-114
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    • 1991
  • 좋은(sub=micron) 분해능을 갖는 Photoresist film의 방법에 의한 Micro-Lithography의 발달은 반도체, Electro-Optic 등의 첨단산업에 큰 기여를 하였다. 본 내용은 이러한 PR을 이용한 Lithography System의 광학적인 원리에 대해 소개하고자 한다.

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다단 침전법에 의한 구형 BaMgAl10O17:Eu 형광체의 제조 및 특성 (Preparation and Properties of Spherical BaMgAl10O17:Eu Phosphor by Multi-step Precipitation Method)

  • 박정민;정하균;박희동;박윤창
    • 한국재료학회지
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    • 제12권11호
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    • pp.840-844
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    • 2002
  • A spherical $BaMgAl_{10}$ $O_{17}$ :Eu phosphor has been synthesized by a multi-step precipitation route. In order to successfully synthesize the phosphor with spherical shape, the hydrated-alumina particles should be controlled for spherical shape. In this process, the hydroxypropyl cellulose (HPC) was used as a dispersing reagent. This reagent plays an important role in that the particles were controlled to have the uniform size of sub-micron. The final product prepared by the multi-step precipitation method maintained spherical shape with uniform size of 0.4$\mu\textrm{m}$. It can be seen in X-ray diffraction patterns, formation of the single phase of $BaMgAl_{10}$ $O_{17}$ :Eu phosphor prepared by the multi-step precipitation method at $1350^{\circ}C$. Also, the emission spectra of spherical $BaMgAl_{O}$ $10_{17}$ :Eu phosphor in the present case was compared with those of commercially-available blue phosphor under VUV (Vacuum Ultra Violet) excitation. The luminescence process of the $BaMgAl_{10}$ $O_{17}$ :Eu phosphor is characterized by the $4f^{6}$$5d^1$longrightarrow4f$^{7}$ transition (blue) of the $Eu^{2+}$ ion acting as an activating center and the maximum luminescence intensity was obtained by reduction treatment at 145$0^{\circ}C$.

실리카 템플레이트를 이용하여 다공성 중공형태를 갖는 LiMn2O4 합성 및 전기화학적 특성 연구 (Synthesis and Electrochemical Performance of Mesoporous Hollow Sphere Shape LiMn2O4 using Silica Template)

  • 류성현;류광선
    • 전기화학회지
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    • 제14권3호
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    • pp.184-190
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    • 2011
  • 다공성 중공형태의 $LiMn_2O_4$는 실리카 템플레이트과 침전법에 의해 합성되었다. 합성한 $LiMn_2O_4$는 나노사이즈의 1차입자를 가지며 다공성 중공형태를 가지고 있었다. 실리카 템플레이트의 제거는 NaOH를 이용하여 화학적 에칭법이 사용되었다. NaOH의 농도를 높여줌에 따라 망간산화물 입자 크기가 증가 하며 다공성의 중공구가 형성되었다. X-선 회절 분석을 통하여 합성된 $LiMn_2O_4$는 Fd3m의 공간 그룹을 가지는 스피넬 구조가 형성된 것을 확인 할 수 있었다. 실리카와 망간염의 비율을 높여주었을 경우 합성된 $LiMn_2O_4$는 1차입자의 크기는 감소한다. 실리카와 망간염의 비율이 1 : 9 이상인 경우에서 마이크론 단위의 정방정계의 $LiMn_2O_4$가 합성되었다. 다공성 중공형태의 $LiMn_2O_4$의 전기화학적 특성을 평가하기 위하여 2032형태의 코인셀을 제작하여 충/방전 테스트를 하였다. 나노사이즈의 1차입자를 가진 시료의 경우에는 마이크론 사이즈의 1차입자를 가진 시료보다 용량은 낮았지만 용량유지율은 향상되는 것 확인 할 수 있었다.

엑스선 그레이 스케일 리소그래피를 활용한 반원형 단면의 서브 마이크로 선 패턴의 바이오멤스 플랫폼 응용 (X-ray grayscale lithography for sub-micron lines with cross sectional hemisphere for Bio-MEMS application)

  • 김강현;김종현;남효영;김수현;임근배
    • 센서학회지
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    • 제30권3호
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    • pp.170-174
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    • 2021
  • As the rising attention to the medical and healthcare issue, Bio-MEMS (Micro electro mechanical systems) platform such as bio sensor, cell culture system, and microfluidics device has been studied extensively. Bio-MEMS platform mostly has high resolution structure made by biocompatible material such as polydimethylsiloxane (PDMS). In addition, three dimension structure has been applied to the bio-MEMS. Lithography can be used to fabricate complex structure by multiple process, however, non-rectangular cross section can be implemented by introducing optical apparatus to lithography technic. X-ray lithography can be used even for sub-micron scale. Here in, we demonstrated lines with round shape cross section using the tilted gold absorber which was deposited on the oblique structure as the X-ray mask. This structure was used as a mold for PDMS. Molded PDMS was applied to the cell culture platform. Moreover, molded PDMS was bonded to flat PDMS to utilize to the sub-micro channel. This work has potential to the large area bio-MEMS.