• 반도체디스플레이기술학회지
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• 제7권4호
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• pp.29-33
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• 2008

Rapid increase of integrity for recent semiconductor industry highly demands the development of removal technology of contaminated particles in the scale of a few microns or even smaller. It is known that the surface cleaning technology using $CO_2$ snow has its own merits of high efficiency. However, the detailed removal mechanism of particles using this technology is not yet fully understood due to the lack of sophisticated research endeavors. The detachment mechanism of particles from the substrates is known to be belonged in four types; rebounding, sliding, rolling and lifting. In this study, a modeling effort is performed to explain the detachment mechanism of a contaminant particle due to the rebounding caused by the vertical collision of the $CO_2$ snow. The Hertz and Johnson-Kendall-Roberts(JKR) theories are employed to describe the contact, adhesion and deformation mechanisms of the particles on a substrate. Numerical simulations are followed for several representative cases, which provide the perspective views on the dynamic characteristics of the particles as functions of the material properties and the initial inter-particle collision velocity.

• 한국자기학회지
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• 제10권6호
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• pp.310-317
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• 2000

먼지 입자에 의한 thermal asperity(TA)써 발생은 드라이브의 신뢰성에 큰 영향을 미친다. 본 논문에서는 드라이브의 입자 분사 시험 등을 통하여 헤드 및 디스크의 TA민감도를 분석하고 TA발생의 중요 인자들을 고찰하였다. 헤드의 TA 민감도는 MR 및 GMR 센서의 재질 및 특성에 많은 영향을 받으며 특히 바이어스 전류가 증가함에 띠라 TA 민감도는 증가한다. 한편 슬라이더의 ABS 형태를 적절히 설계 함으로서 TA를 어느 정도 감소시킬 수 있다. 디스크의 경우 디스크 카본 overcoat층의 scratch저항력을 증가시킴으로써 TA의 발생을 감소시킬 수 있다. 그러나 먼지 입자가 디스크 표면에 부착되는 정도를 결정하는 표면에너지는 TA 발생에 거의 영향을 미치지 않는다. 이는 TA 발생을 초래하는 먼지 입자의 크기가 1-2 $\mu\textrm{m}$로서 디스크 표면의 윤활막에 의한 모세관력이 너무 커서 입자들이 디스크표면으로부터 이탈할 수 없기 때문이다

• Design & Manufacturing
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• 제14권3호
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• pp.63-70
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• 2020

As the consumer market in the VR(virtual reality) and the head-up display industry grows, the demand for 5-axis machines and grooving machines using on a ultra-precision machining increasing. In this paper, ultra-precision diamond tools satisfying the cutting edge width of 500 nm were developed through the process research of a focused ion beam. The material used in the experiment was a single-crystal diamond tool (SCD), and the equipment for machining the SCD used a focused ion beam. In order to reduce the influence of the Gaussian beam emitted from the focused ion beam, the lift-off process technology used in the semiconductor process was used. 2.9 ㎛ of Pt was coated on the surface of the diamond tool. The sub-micron tool with a cutting edge of 492.19 nm was manufactured through focused ion beam machining technology. Toshiba ULG-100C(H3) equipment was used to process fine-pattern using the manufactured ultra-precision diamond tool. The ultra-precision machining experiment was conducted according to the machining direction, and fine burrs were generated in the pattern in the forward direction. However, no burr occurred during reverse machining. The width of the processed pattern was 480 nm and the price of the pitch was confirmed to be 1 ㎛ As a result of machining.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.191-195
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• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권2호
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• pp.121-129
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• 2011

It is progressing as new advents and remarkable developments of mobile device every year. On the upper line reason, NAND FLASH large density memory demands which can be stored into portable devices have been dramatically increasing. Therefore, the cell size of the NAND Flash memory has been scaled down by merely 50% and has been doubling density each per year. [1] However, side effects have arisen the cell distribution and reliability characteristics related to coupling interference, channel disturbance, floating gate electron retention, write-erase cycling owing to shrinking around 20nm technology. Also, FLASH controller to manage shrink effect leads to speed and current issues. In this paper, It will be introduced to solve cycling, retention and fail bit problems of sub-deep micron shrink such as Virtual negative read used in moving read, randomization. The characteristics of retention, cycling and program performance have 3 K per 1 year and 12.7 MB/s respectively. And device size is 179.32 $mm^2$ (16.79 mm ${\times}$ 10.68 mm) in 3 metal 26 nm CMOS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1278-1282
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• 2004

수열처리법으로 nano-sized $CeO_2$ 입자를 $Al_3O_3$ 입자의 표면에 균일하게 코팅하여 $AL_2O_3/O_2$ composite 연마 입자를 제조하었다. 제조된 $Al_2O_3\CeO_2$ composite 입자의 뭍성을 TEM, XRD, zeta potential analyzer 및 particle size analyzer로 측징하였다. $Al_2O_3/CeO_2$ composite 입자와 구성된 슬러리와 비교 시료로서 $Al_2O_3$와 $CeO_2$ 입자를 혼합한 슬러리를 사용하여 thermal oxide film에 대한 연마특성을 평가하였다. 연마슬러리에 포함된 $A1_2O_3/CeO_2$ composite 입자와 $Al_2O_3$와 $CeO_2$ 혼합입자에서 나노 크기의 세리아 입자가 sub-micron 크기의 알루미나 입자의 표면에 균일하게 코팅되므로서 $Al_2O_3$ 단일 성분의 슬러리에 비해 removal rate(RR)는 106 nm/min, WIWNU는 $8\sim9%$, roughness는 $2.6{\AA}$의 향상된 연마 특성을 나타내었다. 알루미나 입자의 불규칙한 형상 때문에 $Al_2O3/CeO_2$ composite 슬러리와 $Al_2O_3$ 와 $CeO_2$ 혼합슬러리의 연마 특성이 비슷한 수준을 나타내었다.

• 한국정보통신학회논문지
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• 제11권4호
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• pp.696-706
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• 2007

다중처리기 SoC(MPSoC) 플랫폼은 SoC 설계 분야에 새로운 여러가지 혁신적인 트랜드를 가지고 있다. 급격히 십억 단위의 트랜지스터 집적이 가능한 시대에 게이트 길이가 $60{\sim}90nm$ 범위를 갖는 서브 마스크로 기술에서 주요문제점들은 확장되지 않는 선 지연, 신호 무결성과 비동기화 통신에서의 오류로 인해 발생한다. 이러한 문제점들은 미래의 SoC을 위한 NOC 구조의 사용에 의해 해결될 수 있다. 대부분의 미래 SoC들은 칩 상에서 통신을 위해 네트워크 구조와 패킷 기반 통신 프로토콜을 사용할 것이다. 이 논문은 NOC 구조를 위한 칩 통신에서 교착상태가 발생되지 않는 것을 보장하기 위해 적극적 turn prohibition을 갖는 적응적 wormhole 라우팅에 대해 기술한다. 또한 5개의 전이중, flit-wide 통신 채널을 갖는 간단한 라우팅 구조를 제시한다. 메시지 지연에 대한 시뮬레이션 결과를 나타내고 같은 연결비율에서 운영되는 다른 기술들의 결과와 비교한다.

• Advances in environmental research
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• 제5권1호
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• pp.1-18
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• 2016

Magnetic nano-based sorbents have been synthesized for the recovery of two rare earth elements (REE: Nd(III) and Yb(III)). The magnetic nano-based particles are synthesized by a one-pot hydrothermal procedure involving co-precipitation under thermal conditions of Fe(III) and Fe(II) salts in the presence of chitosan. The composite magnetic/chitosan material is crosslinked with epichlorohydrin and modified by grafting alanine and serine amine-acids. These materials are tested for the binding of Nd(III) (light REE) and Yb(III) (heavy REE) through the study of pH effect, sorption isotherms, uptake kinetics, metal desorption and sorbent recycling. Sorption isotherms are well fitted by the Langmuir equation: the maximum sorption capacities range between 9 and 18 mg REE $g^{-1}$ (at pH 5). The sorption mechanism is endothermic (positive value of ${\Delta}H^{\circ}$) and contributes to increase the randomness of the system (positive value of ${\Delta}S^{\circ}$). The fast uptake kinetics can be described by the pseudo-second order rate equation: the equilibrium is reached within 4 hours of contact. The sub-micron size of sorbent particles strongly reduces the contribution of resistance to intraparticle diffusion in the control of uptake kinetics. Metal desorption using acidified thiourea solutions allows maintaining sorption efficiency for at least four successive cycles with limited loss in sorption capacity.