• Title/Summary/Keyword: state switching

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A novel TIGBT tructure with improved electrical characteristics (향상된 전기적 특성을 갖는 트렌치 게이트형 절연 게이트 바이폴라 트랜지스터에 관한 연구)

  • Koo, Yong-Seo;Son, Jung-Man
    • Journal of IKEEE
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    • v.11 no.4
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    • pp.158-164
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    • 2007
  • In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

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State-Aware Re-configuration Model for Multi-Radio Wireless Mesh Networks

  • Zakaria, Omar M.;Hashim, Aisha-Hassan Abdalla;Hassan, Wan Haslina;Khalifa, Othman Omran;Azram, Mohammad;Goudarzi, Shidrokh;Jivanadham, Lalitha Bhavani;Zareei, Mahdi
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.11 no.1
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    • pp.146-170
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    • 2017
  • Joint channel assignment and routing is a well-known problem in multi-radio wireless mesh networks for which optimal configurations is required to optimize the overall throughput and fairness. However, other objectives need to be considered in order to provide a high quality service to network users when it deployed with high traffic dynamic. In this paper, we propose a re-configuration optimization model that optimizes the network throughput in addition to reducing the disruption to the mesh clients' traffic due to the re-configuration process. In this multi-objective optimization model, four objective functions are proposed to be minimized namely maximum link-channel utilization, network average contention, channel re-assignment cost, and re-routing cost. The latter two objectives focus on reducing the re-configuration overhead. This is to reduce the amount of disrupted traffic due to the channel switching and path re-routing resulted from applying the new configuration. In order to adapt to traffic dynamics in the network which might be caused by many factors i.e. users' mobility, a centralized heuristic re-configuration algorithm called State-Aware Joint Routing and Channel Assignment (SA-JRCA) is proposed in this research based on our re-configuration model. The proposed algorithm re-assigns channels to radios and re-configures flows' routes with aim of achieving a tradeoff between maximizing the network throughput and minimizing the re-configuration overhead. The ns-2 simulator is used as simulation tool and various metrics are evaluated. These metrics include channel-link utilization, channel re-assignment cost, re-routing cost, throughput, and delay. Simulation results show the good performance of SA-JRCA in term of packet delivery ratio, aggregated throughput and re-configuration overhead. It also shows higher stability to the traffic variation in comparison with other compared algorithms which suffer from performance degradation when high traffic dynamics is applied.

Molecular Conductance Switching Processes through Single Ruthenium Complex Molecules in Self-Assembled Monolayers

  • Seo, So-Hyeon;Lee, Jeong-Hyeon;Bang, Gyeong-Suk;Lee, Hyo-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.27-27
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    • 2011
  • For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

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Improvement of Bleaching Performance of Photosensitive Electrochromic Device by the Additive of TEMPOL (TEMPOL 첨가제 적용에 의한 광감응형 전기변색 소자 탈색성능 향상)

  • Song, Seung Han;Park, Hee sung;Cho, Churl Hee;Hong, Sungjun;Han, Chi-Hwan
    • Journal of the Korean Chemical Society
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    • v.66 no.3
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    • pp.209-217
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    • 2022
  • We have developed photosensitive electrochromic smart windows that does not require any transparent conducting oxide (TCO) substrate. In our previous study, we demonstrated that a flexible film-type device made with a low temperature curing WO3 sol and TiO2 sol could show a reversible and rapid switching between colored and bleached state via incorporation of platinum catalysts on the surface of WO3 layer. However, when these devices were exposed to sunlight over 4 hour, it was confirmed that they did not return to fully bleached state in the darkened state due to their overcoloring process. In this study, we added 4-hydroxy-(2,2,6,6-tetramethylpiperidin-1-yl)oxyl (TEMPOL) as an additive to the electrolyte of photosensitive electrochromic device to effectively prevent the undesired overcoloring process. The resulting device with TEMPOL indeed did not undergo excessive coloration and showed great reversibility even after being exposed to sunlight for over 4 hours. Various concentrations of TEMPOL were applied to compare changes in the visible transmittance and coloring/bleaching kinetics of devices. In terms of energetic point of view, we proposed a plausible mechanism of TEMPOL to prevent excessive coloration.

Changes in the Metabolic Parameters and Positive and Negative Syndrome Scale (PANSS) Scores of Patients with Schizophrenia 8 Weeks after Switching to Paliperidone (Paliperidone으로 교체한 조현병 환자에서 8주 후 Metabolic Parameter와 Positive and Negative Syndrome Scale (PANSS) 점수의 변화)

  • Jeong, Tae-Yeong;Choi, Young-Min;Kim, Bong-Seog;Lee, Dong-Woo;Gim, Min-Sook;Park, Jun-Hyun
    • Korean Journal of Biological Psychiatry
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    • v.19 no.2
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    • pp.84-90
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    • 2012
  • Objectives : The purpose of this study was to examine the changes in metabolic parameters and Positive and Negative Syndrome Scale (PANSS) scores of patients previously treated with atypical antipsychotic drugs other than paliperidone, after 8 weeks of treatment with paliperidone. Methods : Changes in body weight, body mass index, leptin, lipid levels, fasting glucose, and PANSS scores of patients who switched from other atypical antipsychotic drugs to paliperidone were measured after 8 weeks of treatment with paliperidone. We compared these results with those of patients who had not been treated with antipsychotic drugs for at least 2 weeks prior to treatment with paliperidone (antipsychotic drug-free patients). Results : The antipsychotic drug-free group (n = 9) did not show significant changes in metabolic parameters, but showed a significant improvement in total and subscale scores of PANSS. In the group that switched from other atypical antipsychotic drugs to paliperidone (n = 13), body weight, body mass index and fasting glucose level significantly increased, while total and subscale scores of PANSS significantly improved. Conclusions : Paliperidone treatment will benefit patients with schizophrenia who have been antipsychotic drug-free or who have had difficulty with other atypical antipsychotic drugs, with regard to their psychopathological state. However, if patients have been treated with other atypical antipsychotic drugs before switching to paliperidone, they could gain body weight or their fasting glucose level could increase over a short period because of a change in receptor number and sensitivity caused by the previously prescribed antipsychotic drugs, and hence, paliperidone should be prescribed with caution for these patients.

Analysis on Recent Changes in the Covered Interest Rate Parity Condition (글로벌 금융위기 전후 무위험 이자율 평형조건의 동태성 변화 분석)

  • Kim, Jung Sung;Kang, Kyu Ho
    • KDI Journal of Economic Policy
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    • v.36 no.2
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    • pp.103-136
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    • 2014
  • The covered interest rate parity condition (CIRP) has been widely used in open macroeconomic analysis, risk management, exchange rate forecasts, and so forth. Due to the recent global financial crises, there have been remarkable changes in the financial markets of the emerging markets. These changes possibly influenced the dynamics of the covered interest rate parity condition. In this paper, we investigate whether the CIRP dynamics has changed, and what is the nature of the regime changes. To do this, we propose and estimate multiple-state Markov regime switching models using a Bayesian MCMC method. Our estimation results indicate that the default risk or the deviation from the CIRP has been decreased after the crisis. It seems to be associated with the more active interaction between the short-term bond market and the short-term foreign exchange market than before. The tightened relation of these two financial markets is caused by the arbitrage transaction of foreign investors.

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Filed Programmable Logic Control and Test Pattern Generation for IoT Multiple Object switch Control (사물인터넷 환경에서 다중 객체 스위치 제어를 위한 프로그래밍 가능한 로직제어 및 테스트 패턴 형성)

  • Kim, Eung-Ju;Jung, Ji-Hak
    • Journal of Internet of Things and Convergence
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    • v.6 no.1
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    • pp.97-102
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    • 2020
  • Multi-Channel Switch ICs for IoT have integrated several solid state structure low ON-resistance bi-directional relay MOS switches with level shifter to drive high voltage and they should be independently controlled by external serialized logic control. These devices are designed for using in applications requiring high-voltage switching control by low-voltage control signals, such as medical ultra-sound imaging, ink-jet printer control, bare board open/short and leakage test system using Kelvin 4-terminal measurement method. This paper describes implementation of analog switch control block and its verification using Field programmable Gate Array (FPGA) test pattern generation. Each block has been implemented using Verilog hardware description language then simulated by Modelsim and prototyped in a FPGA board. Compare to conventional IC, The proposed architecture can be applied to fields where multiple entities need to be controlled simultaneously in the IoT environment and the proposed pattern generation method can be applied to test similar types of ICs.

Hypoxia-Induced EDNO Release is Further Augmented by Previous Hypoxia and Reoxygenation in Rabbit Aortic Endothelium

  • Han, Jae-Jin;Suh, Suk-Hyo;Suh, Kyung-Phil;Kim, Ki-Whan
    • The Korean Journal of Physiology and Pharmacology
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    • v.2 no.2
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    • pp.209-216
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    • 1998
  • The present study was designed: (1) to determine whether or not hypoxia stimulates the release of endothelium-derived relaxing factors (EDRFs) from endothelial cells, and (2) to examine whether or not the hypoxia-induced EDRFs release is further augmented by previous hypoxia-reoxygenation, using bioassay system. In the bioassay experiment, rabbit aorta with endothelium was used as EDRFs donor vessel and rabbit carotid artery without endothelium as a bioassay test ring. The test ring was contracted by prostaglandin $F_{2{\alpha}}$ $(3{\times}10^{-6}\;M/L)$, which was added to the solution perfusing through the aortic segment. Hypoxia was evoked by switching the solution aerated with 95% $O_2/5%\;CO_2$ mixed gas to one aerated with 95% $N_2/5%\;CO_2$ mixed gas. When the contraction induced by prostaglandin $F_{2{\alpha}}$ reached a steady state, the solution was exchanged for hypoxic one. And then, hypoxia and reoxygenation were interchanged at intervals of 2 minutes (intermittent hypoxia). The endothelial cells were also exposed to single 10-minute hypoxia (continuous hypoxia). When the bioassay ring was superfused with the perfusate through intact aorta, hypoxia relaxed the precontracted bioassay test ring markedly. Whereas, when bioassay ring was superfused with the perfusate through denuded aorta or polyethylene tubing, hypoxia relaxed the precontracted ring slightly. The relaxation was not inhibited by indomethacin but by nitro-L-arginine or methylene blue. The hypoxia-induced relaxation was further augmented by previous hypoxia-reoxygenation and the magnitude of the relaxation by intermittent hypoxia was significantly greater than that of the relaxation by continuous hypoxia. The results suggest that hypoxia stimulates EDNO release from endothelial cells and that the hypoxia-induced EDNO release is further augmented by previous hypoxia-reoxygenation.

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The Characteristics of Surface Flashover on the Semiconductor in High Electric-Field (고전계 하에서 반도체 연면방전 특성)

  • 이세훈;이충식
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.1
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    • pp.35-43
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    • 2002
  • In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that foiled at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field.

A novel IGBT with improved electrical characteristics (향상된 전기적 특성을 갖는 IGBT에 관한 연구)

  • Koo, Yong-so
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.6 no.3
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    • pp.168-173
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    • 2013
  • In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/?? ) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.