• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.381-384
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• 1999

In this paper, we addressed the problem of reducing the switching activity in pipeline datapath and proposed a solution. clock-gating method is a kind of practical technique for reducing switching activity in finite state machine. But, in the case that the target gated function unit has a pipeline structure, there is some spurious switching activity on each stage register group. This occur in early stage of every function enable cycle. In this paper we proposed a method to solve this problem. This method generates the enable signal to each pipeline stage to gate the clock feeding register group. Experimental results showed effective reduction of dynamic powers in pipeline circuits.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• KIEE International Transactions on Power Engineering
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• v.4A no.2
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• pp.79-83
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• 2004

A new small signal stability analysis method for eigenvalue analysis is presented. This method utilizes the Resistive Companion Form (RCF) for the computation of the transition matrix over a specified time interval, which corresponds to a single cycle operation of the system. This method is applicable to any system, with or without switching element. An illustrative example of the method is presented and the eigenvalues are compared with those of the conventional state space method (analog) in order to demonstrate the accuracy of the proposed eigenvalue analysis method. Also, the variations of oscillation modes that are caused by the switching operation can be precisely analyzed using this method.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.16-21
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• 2002

Most adjustable-speed drives(ASDs) designed to operate 220[V] induction motors incorporate voltage-source inverters (VSIs), which create motor voltages at high switching frequencies. The motor leads used to connect an ASD to a motor can behave like transmission lines for voltage pulses, which can be amplified (reflected) at the motor terminals. The resulting oscillatory transient, known as the long-lead effect, can stress and consequently degrade the statorinsulation system of a motor. This Brief describes the results of tests to 1) determine the correlation between peak motor voltage and the length of motor leads and 2) determine the correlation between peak motor voltage and the switching frequency of the ASD Insulation failures like this usually are caused by voltage surges. Voltage surges are often the result of switching power circuits, lightning strikes, capacitor discharges and solid-state power devices.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.301-302
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• 2014

This paper describes four switch three-phase Z-source rectifier with improved switching characteristics. This configuration has some advantages switching loss and optimal drive circuit. The rectifier has buck-boost function by shoot-through state. Also, the rectifier has the advantage of decreasing inrush current in start-up and transient states. In order to reduce harmonics PWM modulation technique with a variable index has been suggested. Four switch three-phase Z-source rectifier with improved switching characteristics can output stable DC voltage at the same time decreasing the system's harmonic current. And also the paper presents an application of DCC method in Z-source rectifier. Principles and dynamics of the system are discussed in detail. After having viewed the results we can confirm that the proposed method is eligible and efficient.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.18-24
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• 2019

In this paper, expandable bobbin type multiple integrated coupled-inductor applied 4-paralled switching rectifier was proposed. To design the proposed inductor easily, inductance designing formula was derived through magnetic circuit analysis of the 4-paralleled integrated coupled-inductor. Furthermore, to verify practicality of the proposed inductor, it was applied in 600W class 4-paralleled interleaved switching rectifier, and the steady-state characteristics of the proposed inductor and discrete inductors were compared. Consequently, it was showed that the proposed inductor can replace the conventional discrete inductors with alternative electrical characteristic standard, hence miniaturization of the SMPS can be achieved. From the test result, test circuit with the proposed inductor showed maximum 97.1% of power conversion efficiency and under 18W of power loss where the circuit with discrete inductors showed 96.7% and 20W respectively.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.1
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• pp.20-26
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• 2009

In this paper, the switching mode conversion type pulse charger by fly-back converter method for lead battery of the solar cell generator equipment is proposed. And we propose the control circuit and design method of insulated switching mode convert type pulse charger by fly-back convert method in the lead battery. The proposed system can minimize the current consumption by digital pulse. Also the proposed system can generate the constant 10[KHz] frequency, transmit the signal with main control system in the power control system. And it supervises the state of lead battery using one chip micro processor. The proposed the switching mode conversion type pulse charger by the fly-back converter method can charge fast and stabilize lead battery with nominal value 12[V], 20[AH]. Also we propose the design procedure of the power control circuit for turn ratio of fly-back inductor and determining method of values such as the charging current, bulk current, partial current, over current value and fixed charging voltage. The experiment results for the voltage and current wave for partial, bulk, over and fixed charging period show the good charging effect and performance. And the PCB and internal coupling diagram of the switching mode conversion type pulse charger by fly-back converter method is presented.

• Journal of Power Electronics
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• v.18 no.2
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• pp.375-382
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• 2018

A novel active controlled primary current cutting-off zero-voltage and zero-current switching (ZVZCS) PWM three-level dc-dc converter (TLC) is proposed in this paper. The proposed converter has some attractive advantages. The OFF voltage on the primary switches is only Vin/2 due to the series connected structure. The leading-leg switches can obtain zero-voltage switching (ZVS), and the lagging-leg switches can achieve zero-current switching (ZCS) in a wide load range. Two MOSFETs, referred to as cutting-off MOSFETs, with an ultra-low on-state resistance are used as active controlled primary current cutting-off components, and the added conduction loss can be neglected. The added MOSFETs are switched ON and OFF with ZCS that is irrelevant to the load current. Thus, the auxiliary switching loss can be significantly minimized. In addition, these MOSFETs are not series connected in the circuit loop of the dc input bus bar and the primary switches, which results in a low parasitic inductance. The operation principle and some relevant analyses are provided, and a 6-kW laboratory prototype is built to verify the proposed converter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.80-84
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• 2008

We systematically investigated the resistive switching properties of thin $TiO_2$ films on Pt/Ti/$SiO_2$/Si substrates that were embedded with a Co ultra thin layer. An in-situ sputtering technique was used to grow both films without breaking the chamber vacuum. A stable bipolar switching in the current-voltage curve was clearly observed in $TiO_2$ films with an embedded Co ultra thin layer, addressing the high and low resistive state under a bias voltage sweep. We propose that the underlying origin involved in the bipolar switching may be attributed to the interface redox reaction between the Co and $TiO_2$ layers. The improved reproducible switching properties of our novel structures under forward and reverse bias stresses demonstrated the possibility of future non-volatile memory elements in a simple capacitive-like structure.

• Applied Microscopy
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• v.46 no.4
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• pp.206-216
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• 2016

This communication is to elucidate the state-of-the-art of techniques necessary to gather information on a new class of nanoelectronic devices known as memristors and related resistive switching devices, respectively. Unlike classical microelectronic devices such as transistors, the chemical and structural variations occurring upon switching of memristive devices require cutting-edge electron microscopy techniques. Depending on the switching mechanism, some memristors call for the acquisition of atomically resolved structural data, while others rely on atomistic chemical phenomena requiring the application of advanced X-ray and electron spectroscopy to correlate the real structure with properties. Additionally, understanding resistive switching phenomena also necessitates the application not only of pre- and post-operation analysis, but also during the process of switching. This highly challenging in situ characterization also requires the aforementioned techniques while simultaneously applying an electrical bias. Through this review we aim to give an overview of the possibilities and challenges as well as an outlook onto future developments in the field of nanoscopic characterization of memristive devices.