참고문헌
- Aoki Y, Wiemann C, Feyer V, Kim H S, Schneider C M, Ill-Yoo H, and Martin M (2014) Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour. Nat. Commun. 5, 3473. https://doi.org/10.1038/ncomms4473
- Arita M, Ohno Y, and Takahashi Y (2016) Switching of Cu/MoOx/TiN CBRAM at MoOx/TiN interface. Phys. Status Solidi A 213, 306-310. https://doi.org/10.1002/pssa.201532414
- Avizienis A V, Sillin H O, Martin-Olmos C, Shieh H H, Aono M, Stieg A Z, and Gimzewski J K (2012) Neuromorphic atomic switch networks. PLoS One 7, e42772. https://doi.org/10.1371/journal.pone.0042772
-
Calka P, Martinez E, Delaye V, Lafond D, Audoit G, Mariolle D, Chevalier N, Grampeix H, Cagli C, Jousseaume V, and Guedj C (2013) Chemical and structural properties of conducting nanofilaments in TiN/
$HfO_2$ -based resistive switching structures. Nanotechnology 24, 85706. https://doi.org/10.1088/0957-4484/24/8/085706 - Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F, and Tsai M J (2008) Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. Appl. Phys. Lett. 92, 22110. https://doi.org/10.1063/1.2834852
- Chanthbouala A, Garcia V, Cherifi R O, Bouzehouane K, Fusil S, Moya X, Xavier S, Yamada H, Deranlot C, Mathur N D, Bibes M, Barthelemy A, and Grollier J (2012) A ferroelectric memristor. Nat. Mater. 11, 860-864. https://doi.org/10.1038/nmat3415
- Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W, and Chen L J (2013) Dynamic evolution of conducting nanofilament in resistive switching memories. Nano Lett. 13, 3671-3677. https://doi.org/10.1021/nl4015638
- Chen J Y, Huang C W, Chiu C H, Huang Y T, and Wu W W (2015) Switching kinetic of VCM-based memristor: evolution and positioning of nanofilament. Adv. Mater. 27, 5028-5033. https://doi.org/10.1002/adma.201502758
- Chiang Y D, Chang W Y, Ho C Y, Chen C Y, Ho C H, Lin S J, Wu T B, and He J H (2011) Single-ZnO-nanowire memory. IEEE Trans. Electron Devices 58, 1735-1740. https://doi.org/10.1109/TED.2011.2121914
- Choi S J, Park G S, Kim K H, Cho S, Yang W Y, Li X S, Moon J H, Lee K J, and Kim K (2011) In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory. Adv. Mater. 23, 3272-3277. https://doi.org/10.1002/adma.201100507
- Di Martino G, Tappertzhofen S, Hofmann S, and Baumberg J (2016) Nanoscale plasmon-enhanced spectroscopy in memristive switches. Small 12, 1334-1341. https://doi.org/10.1002/smll.201503165
- Dirkmann S, Hansen M, Ziegler M, Kohlstedt H, and Mussenbrock T (2016) The role of ion transport phenomena in memristive double barrier devices. Sci. Rep. 6, 35686. https://doi.org/10.1038/srep35686
- Egerton R F (2007) Limits to the spatial, energy and momentum resolution of electron energy-loss spectroscopy. Ultramicroscopy 107, 575-586. https://doi.org/10.1016/j.ultramic.2006.11.005
- Egerton R F (2011) Electron Energy-Loss Spectroscopy in the Electron Microscope (Springer Science & Business Media, New York).
- Fan Z, Fan X, Li A, and Dong L (2013) In situ forming, characterization, and transduction of nanowire memristors. Nanoscale 5, 12310-12315. https://doi.org/10.1039/c3nr03383j
- Giannuzzi L A (2012) Routine backside FIB milling with EXpressLO. In: Proceedings from ISTFA 2012, pp. 388-390, (ASM International, Materials Park).
- Giannuzzi L A and Stevie F A (1999) A review of focused ion beam milling techniques for TEM specimen preparation. Micron 30, 197-204. https://doi.org/10.1016/S0968-4328(99)00005-0
- Guo A, Li D, Li W, Gu D, Jiang X, and Jiang Y (2016) The relation of structure and dispersion to amorphous silicon silver thin films. Mater. Lett. 185, 5-8. https://doi.org/10.1016/j.matlet.2016.08.089
- Hammad Fawey M, Chakravadhanula V S K, Reddy M A, Rongeat C, Scherer T, Hahn H, Fichtner M, and Kubel C (2016) In situ TEM studies of micron-sized all-solid-state fluoride ion batteries: preparation, prospects, and challenges. Microsc. Res. Tech. 79, 615-624. https://doi.org/10.1002/jemt.22675
- Hansen M, Ziegler M, Kolberg L, Soni R, Dirkmann S, Mussenbrock T, and Kohlstedt H (2015) A double barrier memristive device. Sci. Rep. 5, 13753. https://doi.org/10.1038/srep13753
- Hasegawa T, Terabe K, Tsuruoka T, and Aono M (2012) Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers. Adv. Mater. 24, 252-267. https://doi.org/10.1002/adma.201102597
- Hirotsu Y, Ishimaru M, Ohkubo T, Hanada T, and Sugiyama M (2001) Application of nano-diffraction to local atomic distribution function analysis of amorphous materials. J. Electron Microsc. 50, 435-442. https://doi.org/10.1093/jmicro/50.6.435
-
Huang C H, Huang J S, Lin S M, Chang W Y, He J H, and Chueh Y L (2012)
$ZnO_{1-x}$ nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application. ACS Nano 6, 8407-8414. https://doi.org/10.1021/nn303233r - Huang Y T, Yu S Y, Hsin C L, Huang C W, Kang C F, Chu F H, Chen J Y, Hu J C, Chen L T, He J H, and Wu W W (2013) In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories. Anal. Chem. 85, 3955-3960. https://doi.org/10.1021/ac303528m
- Ilari G M, Chawla V, Matam S, Zhang Y, Michler J, and Erni R (2016) Electron energy loss spectroscopy analysis of the interaction of Cr and V with MWCNTs. Micron 84, 37-42. https://doi.org/10.1016/j.micron.2016.02.009
- Ishitani T and Yaguchi T (1996) Cross-sectional sample preparation by ion beam: a review of ion-sample interaction. Microsc. Res. Tech. 35, 320-333. https://doi.org/10.1002/(SICI)1097-0029(19961101)35:4<320::AID-JEMT3>3.0.CO;2-Q
- Jang M H, Agarwal R, Nukala P, Choi D, Johnson A T C, Chen I W, and Agarwal R (2016) Observing oxygen vacancy driven electroforming in Pt-TiO2-Pt device via strong metal support interaction. Nano Lett. 16, 2139-2144. https://doi.org/10.1021/acs.nanolett.5b02951
- Jeong H Y, Kim J Y, Kim J W, Hwang J O, Kim J E, Lee J Y, Yoon T H, Cho B J, Kim S O, Ruoff R S, and Choi S Y (2010) Graphene oxide thin films for flexible nonvolatile memory applications. Nano Lett. 10, 4381-4386. https://doi.org/10.1021/nl101902k
- Jeong H Y, Lee J Y, Choi S Y, and Kim J W (2009) Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films. Appl. Phys. Lett. 95, 162108. https://doi.org/10.1063/1.3251784
- Kang H J, Kim J H, Oh J W, Back T S, and Kim H J (2010) Ultra-thin TEM sample preparation with advanced backside FIB milling method. Microsc. Microanal. 16, 170-171. https://doi.org/10.1017/S1431927610054474
- Kato N I (2004) Reducing focused ion beam damage to transmission electron microscopy samples. J. Electron Microsc. 53, 451-458. https://doi.org/10.1093/jmicro/dfh080
- Kim K H, Gaba S, Wheeler D, Cruz-Albrecht J M, Hussain T, Srinivasa N, and Lu W (2012) A functional hybrid memristor crossbar-array/CMOS System for data storage and neuromorphic applications. Nano Lett. 12, 389-395. https://doi.org/10.1021/nl203687n
- Kim S, Park J, Jung S, Lee W, Woo J, Cho C, Siddik M, Shin J, Park S, Lee B H, and Hwang H (2011) Excellent resistive switching in nitrogendoped Ge2Sb2Te5 devices for field-programmable gate array configurations. Appl. Phys. Lett. 99, 192110. https://doi.org/10.1063/1.3659692
- Kimura M, Honda K, Yodogawa S, Ohtsuka K, Oo T N, Miyashita K, Hirata H, and Akahane T (2012) Flexible LCDs fabricated with a slit coater: not requiring an alignment film. J. Soc. Inf. Disp. 20, 633-639. https://doi.org/10.1002/jsid.125
- Koo H J, So J H, Dickey M D, and Velev O D (2011) Towards all-soft matter circuits: prototypes of quasi-liquid devices with memristor characteristics. Adv. Mater. 23, 3559-3564. https://doi.org/10.1002/adma.201101257
- Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, and Hwang C S (2010) Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotechnol. 5, 148-153. https://doi.org/10.1038/nnano.2009.456
- Langford R M and Clinton C (2004) In situ lift-out using a FIB-SEM system. Micron 35, 607-611. https://doi.org/10.1016/j.micron.2004.03.002
- Lee A R, Baek G H, Kim T Y, Ko W B, Yang S M, Kim J, Im H S, and Hong J P (2016) Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames. Sci. Rep. 6, 30333. https://doi.org/10.1038/srep30333
- Li Y, Zhong Y, Xu L, Zhang J, Xu X, Sun H, and Miao X (2013) Ultrafast synaptic events in a chalcogenide memristor. Sci. Rep. 3, 1619. https://doi.org/10.1038/srep01619
- Liang K D, Huang C H, Lai C C, Huang J S, Tsai H W, Wang Y C, Shih Y C, Chang M T, Lo S C, and Chueh Y L (2014) Single CuOx nanowire memristor: forming-free resistive switching behavior. ACS Appl. Mater. Interfaces 6, 16537-16544. https://doi.org/10.1021/am502741m
-
Lin C Y, Lee D Y, Wang S Y, Lin C C, and Tseng T Y (2008) Effect of thermal treatment on resistive switching characteristics in Pt/Ti/
$Al_2O_3$ /Ptdevices. Surf. Coat. Technol. 203, 628-631. https://doi.org/10.1016/j.surfcoat.2008.06.133 - Lin L, Liu L, Musselman K, Zou G, Duley W W, and Zhou Y N (2016) Plasmonic-radiation-enhanced metal oxide nanowire heterojunctions for controllable multilevel memory. Adv. Funct. Mater. 5979-5986.
- Liu P H, Lin C C, Manekkathodi A, and Chen L J (2015) Multilevel resistance switching of individual Cu2S nanowires with inert electrodes. Nano Energy 15, 362-368. https://doi.org/10.1016/j.nanoen.2015.05.001
- Liu Q, Long S, Lv H, Wang W, Niu J, Huo Z, Chen J, and Liu M (2010) Controllable growth of nanoscale conductive filaments in solidelectrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. ACS Nano 4, 6162-6168. https://doi.org/10.1021/nn1017582
- Liu Q, Sun J, Lv H, Long S, Yin K, Wan N, Li Y, Sun L, and Liu M (2012) Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv. Mater. 24, 1844-1849. https://doi.org/10.1002/adma.201104104
- Mayer J, Giannuzzi L A, Kamino T, and Michael J (2007) TEM sample preparation and FIB-induced damage. MRS Bulletin 32, 400-407. https://doi.org/10.1557/mrs2007.63
- Munroe P R (2009) The application of focused ion beam microscopy in the material sciences. Mater. Charact. 60, 2-13. https://doi.org/10.1016/j.matchar.2008.11.014
- Ohnishi H, Kondo Y, and Takayanagi K (1998) Quantized conductance through individual rows of suspended gold atoms. Nature 395, 780-783. https://doi.org/10.1038/27399
- Pena F, Ostasevicius T, Fauske V T, Burdet P, Jokubauskas P, Sarahan M, Johnstone D, Nord M, Taillon J, Caron J, MacArthur K E, Eljarrat A, Mazzucco S, Furnival T, Prestat E, Walls M, Donval G, Martineau B, Zagonel L F, Garmannslund A, Aarholt T, Gohlke C, and iygr (2016) hyperspy: HyperSpy 1.1.
- Pino R E, Bohl J W, McDonald N, Wysocki B, Rozwood P, Campbell K A, Oblea A, and Timilsina A (2010) Compact method for modeling and simulation of memristor devices: ion conductor chalcogenide-based memristor devices. In: 2010 IEEE/ACM International Symposium on Nanoscale Architectures, pp. 1-4, (IEEE).
-
Privitera S, Bersuker G, Butcher B, Kalantarian A, Lombardo S, Bongiorno C, Geer R, Gilmer D C, and Kirsch P D (2013) Microscopy study of the conductive filament in
$HfO_2$ resistive switching memory devices. Microelectron. Eng. 109, 75-78. https://doi.org/10.1016/j.mee.2013.03.145 -
Privitera S, Bersuker G, Lombardo S, Bongiorno C, and Gilmer D C (2015) Conductive filament structure in
$HfO_2$ resistive switching memory devices. Solid-State Electron. 111, 161-165. https://doi.org/10.1016/j.sse.2015.05.044 - Qian K, Nguyen V C, Chen T, and Lee P S (2016a) Amorphous-Si-based resistive switching memories with highly reduced electroforming voltage and enlarged memory window. Adv. Electron. Mater. 2, 1500370. https://doi.org/10.1002/aelm.201500370
- Qian K, Tay R Y, Nguyen V C, Wang J, Cai G, Chen T, Teo E H T, and Lee P S (2016b) Hexagonal boron nitride thin film for flexible resistive memory applications. Adv. Funct. Mater. 26, 2176-2184. https://doi.org/10.1002/adfm.201504771
- Savel'ev S E, Alexandrov A S, Bratkovsky A M, and Williams R S (2011) Molecular dynamics simulations of oxide memristors: thermal effects. Appl. Phys. A: Mater. Sci. Process. 102, 891-895. https://doi.org/10.1007/s00339-011-6293-4
- Seo S, Lee M J, Seo D H, Jeoung E J, Suh D S, Joung Y S, Yoo I K, Hwang I R, Kim S H, Byun I S, Kim J S, Choi J S, and Park B H (2004) Reproducible resistance switching in polycrystalline NiO films. Appl. Phys. Lett. 85, 5655-5657. https://doi.org/10.1063/1.1831560
- Song J, Zhang Y, Xu C, Wu W, and Wang Z L (2011) Polar charges induced electric hysteresis of ZnO nano/microwire for fast data storage. Nano Lett. 11, 2829-2834. https://doi.org/10.1021/nl2011966
- Stoger-Pollach M, Franco H, Schattschneider P, Lazar S, Schaffer B, Grogger W, and Zandbergen H W (2006) Cerenkov losses: a limit for bandgap determination and Kramers-Kronig analysis. Micron 37, 396-402. https://doi.org/10.1016/j.micron.2006.01.001
- Stoger-Pollach M, and Schattschneider P (2007) The influence of relativistic energy losses on bandgap determination using valence EELS. Ultramicroscopy 107, 1178-1185. https://doi.org/10.1016/j.ultramic.2007.01.015
- Strachan J P, Pickett M D, Yang J J, Aloni S, David Kilcoyne A L, Medeiros-Ribeiro G, and Stanley Williams R (2010) Direct identification of the conducting channels in a functioning memristive device. Adv. Mater. 22, 3573-3577. https://doi.org/10.1002/adma.201000186
- Strachan J P, Yang J J, Montoro L A, Ospina C A, Ramirez A J, Kilcoyne A L D, Medeiros-Ribeiro G, and Williams R S (2013) Characterization of electroforming-free titanium dioxide memristors. Beilstein J. Nanotechnol. 4, 467-473. https://doi.org/10.3762/bjnano.4.55
- Sun X, Yu B, Ng G, and Meyyappan M (2007) One-dimensional phasechange nanostructure: germanium telluride nanowire. J. Phys. Chem. C 111, 2421-2425. https://doi.org/10.1021/jp0658804
- Tian X, Wang L, Wei J, Yang S, Wang W, Xu Z, and Bai X (2014) Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM. Nano Res. 7, 1065-1072. https://doi.org/10.1007/s12274-014-0469-0
- Toufik S, Liping W, Louis G, and Asen A (2015) Physical simulation of sibased resistive randomaccess memory devices. In: Proceedings from SISPAD 2015, pp. 385-388, (IEEE).
- Tseng A A (2004) Recent developments in micromilling using focused ion beam technology. J. Micromech. Microeng. 14, R15. https://doi.org/10.1088/0960-1317/14/4/R01
- Valov I and Kozicki M N (2013) Cation-based resistance change memory. J. Phys. D: Appl. Phys. 46, 74005. https://doi.org/10.1088/0022-3727/46/7/074005
- Vasudevan R K, Matsumoto Y, Cheng X, Imai A, Maruyama S, Xin H L, Okatan M B, Jesse S, Kalinin S V, and Nagarajan V (2014) Deterministic arbitrary switching of polarization in a ferroelectric thin film. Nat. Commun. 5, 4971. https://doi.org/10.1038/ncomms5971
- Vieweg B F, Butz B, Peukert W, Klupp Taylor R N, and Spiecker E (2012) TEM preparation method for site- and orientation-specific sectioning of individual anisotropic nanoparticles based on shadow-FIB geometry. Ultramicroscopy 113, 165-170. https://doi.org/10.1016/j.ultramic.2011.11.015
- Waser R (2012) Redox-based resistive switching memories. J. Nanosci. Nanotechnol. 12, 7628-7640. https://doi.org/10.1166/jnn.2012.6652
-
Wu X, Li K, Raghavan N, Bosman M, Wang Q X, Cha D, Zhang X X, and Pey K L (2011) Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-
${\kappa}$ dielectric based resistive random access memory. Appl. Phys. Lett. 99, 93502. https://doi.org/10.1063/1.3624597 - Xia Q (2011) Nanoscale resistive switches: devices, fabrication and integration. Appl. Phys. A: Mater. Sci. Process. 102, 955-965. https://doi.org/10.1007/s00339-011-6288-1
- Xia Q, Robinett W, Cumbie M W, Banerjee N, Cardinali T J, Yang J J, Wu W, Li X, Tong W M, Strukov D B, Snider G S, Medeiros-Ribeiro G, and Williams R S (2009) Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Nano Lett. 9, 3640-3645. https://doi.org/10.1021/nl901874j
- Yan H, Choe H S, Nam S, Hu Y, Das S, Klemic J F, Ellenbogen J C, and Lieber C M (2011) Programmable nanowire circuits for nanoprocessors. Nature 470, 240-244. https://doi.org/10.1038/nature09749
- Yang Y, Gao P, Gaba S, Chang T, Pan X, and Lu W (2012) Observation of conducting filament growth in nanoscale resistive memories. Nat. Commun. 3, 732. https://doi.org/10.1038/ncomms1737
- Yao I C, Lee D Y, Tseng T Y, and Lin P (2012) Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices. Nanotechnology 23, 145201. https://doi.org/10.1088/0957-4484/23/14/145201
- Zalden P, Shu M J, Chen F, Wu X, Zhu Y, Wen H, Johnston S, Shen Z X, Landreman P, Brongersma M, Fong S W, Wong H S P, Sher M J, Jost P, Kaes M, Salinga M, von Hoegen A, Wuttig M, and Lindenberg A M (2016) Picosecond electric-field-induced threshold switching in phase-change materials. Phys. Rev. Lett. 117, 67601. https://doi.org/10.1103/PhysRevLett.117.067601
피인용 문헌
- Electron Beam Effects on Silicon Oxide Films – Structure and Electrical Properties vol.24, pp.S1, 2018, https://doi.org/10.1017/S1431927618009534