• 한국전기전자재료학회논문지
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• 제35권2호
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• pp.190-193
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• 2022

In this work, the effect of sputtering working pressure for the tellurium film and its thin-film transistor was investigated. The transfer characteristics of tellurium thin-film transistors were improved by increasing the working pressure during sputtering process. As increasing working pressure, physical and optical properties of Te films such as crystallinity, transmittance, and surface roughness were improved. Therefore, the improved transfer characteristics of Te thin-film transistors may originate from both improved interface properties between the silicon oxide gate dielectric layer and the tellurium active layer with an improved quality of Te film. In conclusion, the control of working pressure during sputtering would be important for obtaining high-performance tellurium-based thin film transistor

• 한국재료학회지
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• 제16권8호
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• pp.461-465
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• 2006

Chromium (Cr) films were deposited on plain carbon steel sheets by DC and RF magnetron sputtering as well as by electroplating. Effects of DC or RF sputtering power on the deposition rate and properties such as, hardness, surface roughness and corrosion-resistance of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. Salt fog tests were used to evaluate the corrosion resistance of the samples. The deposition rate, hardness, and surface roughness of the Cr film deposited by either DC or RF sputtering increase with the increase of sputtering power but the adhesion strength is nearly independent of the sputtering power. The deposition rate, hardness, and adhesion strength of the Cr film deposited by DC sputtering are higher than those of the Cr film deposited by RF sputtering, but RF sputtering offers smoother surface and higher corrosion-resistance. The sputter-deposited Cr film is harder and has a smoother surface than the electroplated one. The sputter-deposited Cr film also has higher corrosion-resistance than the electroplated one, which may be attributed to the smoother surface of the sputter-deposited film.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.100-105
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• 2020

Recently, as display and semiconductor devices have been miniaturized and highly integrated, there is a demand for optimization of the structural characteristics of the thin film accordingly. The sputtering device has the advantage of stably obtaining a desired thin film depending on the material selected for the target. However, due to the structural characteristics of the sputtering equipment, the structural characteristics of the film may be different depending on the incidence angle of the sputtering target material to the substrate. In this study, the characteristics of the thin film material according to the scattering angle of the target material and the incidence position of the substrate were studied to find the optimization design rule of the sputtering equipment. To this end, a Si thin film of 1 ㎛ or less was deposited on the Si(100) substrate, and then the microstructure, reflectance, surface roughness, and thin film crystallinity of the thin film formed for each substrate location were investigated. As a result of the study, it was found that as the sputter scattering angle increased and the substrate incident angle decreased, the gap energy along with the surface structure of the thin film increased from 1.47 eV to 1.63 eV, gradually changing to a non-conductive tendency.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1098-1101
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• 1995

NbTi thin films were prepared on Si wafer and Cu substrate by rf magnetron sputtering in the range of sputtering pressure $3{\times}10^{-2}$torr to $3{\times}10^{-4}$torr at room temperature. The influence of sputtering pressure and substrate type on crystallographic orientation and morphology of NbTi thin films was investigated by using X-ray diffraction(XRD) and scanning electron microscopy(SEM), respectively. And the effect of crystallographic orientation and morphology of NbTi film on electromagnetic behaviors was estimated by measuring critical current in various applied magnetic field. The film morphology changed from porous structure consisting of tapered crystallites to densely deposited film decreasing with sputtering pressure. The change of crystallographic orientation with the sputtering pressure and rf power was calculated from the texture coefficient of(002) plane based on XRD patterns. It was found that a change of texture coefficient of(002) plane increased with decreasing sputtering pressure. From observation of critical current in various applied magnetic field, we have identified that the change of critical current abruptly decrease applying with magnetic field and NbTi film produced at high sputtering pressure does not exhibit superconductivity but at low sputtering pressure shows superconductivity.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.105-108
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• 2018

Transparent $TiO_2$ nanotube arrays are successfully prepared by a two-step approach involving electrochemical anodization and RF magnetron sputtering. First, a Ti film is deposited on an FTO substrate by RF magnetron sputtering at room temperature. The morphologies of the Ti film are controlled by the working distance, Ar flow, and DC power. Second, an anodization treatment is electrochemically performed for the formation of nanotube arrays from the deposited Ti film, followed by post-annealing treatment in air for the formation of $TiO_2$ crystallization. The back side of the crystallized $TiO_2$ nanotube arrays is illuminated with solar light to characterize the photoelectrochemical reaction, and their photoelectrochemical properties are investigated. This work provides information on application of a thin film deposited by RF sputtering in the field of photoelectrochemical water splitting.

• 한국진공학회지
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• 제2권4호
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• 열처리공학회지
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• 제22권3호
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.109-124
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• 2023

For decades, sputtering as a physical vapor deposition (PVD) method has been a widely used technique for film coating processes. The sputtering enables oxides, metals, alloys, nitrides, etc to be deposited on a wide variety of substrates from silicon wafers to polymer substrates. Meanwhile, transparent conductive oxides (TCOs) have played important roles as electrodes in electrical applications such as displays, sensors, solar cells, and thin-film transistors. TCO films fabricated through a sputtering process have a higher quality leading to an improved device performance than other films prepared with other methods. In this review, we discuss the mechanism of sputtering deposition and detail the TCO materials. Related technologies (processing conditions, materials, and applications) are introduced for electrical applications.