• 제목/요약/키워드: source resistance

검색결과 1,031건 처리시간 0.034초

Investigation of contact resistance between metal electrodes and amorphous gallium indium zinc oxide (a-GIZO) thin-film transistors

  • Kim, Woong-Sun;Moon, Yeon-Keon;Lee, Sih;Kang, Byung-Woo;Kwon, Tae-Seok;Kim, Kyung-Taek;Park, Jong-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.546-549
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    • 2009
  • In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

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고차 판요소법을 이용한 몰수체의 조파저항 계산 (Calculation of Wave Resistance for a Submerged Body by a Higher Order Panel Method)

  • 강창구;김세은
    • 대한조선학회논문집
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    • 제29권4호
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    • pp.58-65
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    • 1992
  • 본 논문에서는 물체표면을 겹 3차 B-Spline 방법에 의하여 표현하고, 특이점세기를 겹선형으로 근사하는 고차판요소법을 이용하여 몰수체에 대한 조파저항을 계산하였다. 여기서 Neumann-kelvin 문제는 쏘오스분포법과 법선다이폴분포법에 의하여 해석되었다. 고차 판요소법에 의하여 계산된 결과는 Hess & Smith가 사용한 최저차 판요소법 결과와 비교하였으며, 고차 판요소법의 수렴도는 보통 판요소법보다 훨씬 좋은 것으로 나타났다. 그러나, 고차 판요소법에 의하여 계산된 조파저항도 최저차 판요소법에 의한 것과 마찬가지로 낮은 Froude 수에서는 해석해와의 차이를 보이고 있다.

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Development of a SCAR Marker Linked to Ph-3 in Solanum ssp.

  • Park, Pue Hee;Chae, Young;Kim, Hyun-Ran;Chung, Kyeong-Ho;Oh, Dae-Geun;Kim, Ki-Taek
    • 한국육종학회지
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    • 제42권2호
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    • pp.139-143
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    • 2010
  • Late blight caused by Phytophthora infestans is historically a serious epidemic disease in potato and tomato cultivations. Accession L3708 (Solanum pimpinellifolium), a new source for late blight resistance was identified in AVRDC, and carries the resistance gene, Ph-3, incompatible to P. infestans race 3. The AFLP markers linked to Ph-3 were previously developed from the L3708 accession (Chunwongse et al. 2002). To facilitate tomato breeding with the Ph-3 gene, an attempt was made to convert AFLP markers to sequence-characterized amplified region (SCAR) markers. Among 6 AFLP markers, only one AFLP marker, L87, was successfully converted to SCAR marker. The resistance-specific 230 bp AFLP fragment was cloned and sequenced, and the PCR primer amplifying a 123 bp fragment was designed. This SCAR marker could discriminate resistant and susceptible individuals with high stringency. The developed SCAR marker could be used for the marker assisted-selection in tomato breeding programs.

Fabrication of Low Carbon Steel Coated with 18%Cr-2.5%Ni-Fe Powder by Laser Cladding and Its Application on Plastic Injection Mold for Aluminum Diecasting

  • Kim, Cheol-Woo;Yoo, Hyo-Sang;Cho, Kyun-Taek;Jeon, Jae-Yeol;Choi, Se-Weon;Kim, Young-Chan
    • 한국재료학회지
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    • 제31권11호
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    • pp.601-607
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    • 2021
  • Laser cladding a surface treatment process that grants superior characteristics such as toughness, hardness, and corrosion resistance to the surface, and rebuilds cracked molds; as such, it can be a strong tool to prolong service life of mold steel. Furthermore, compared with the other similar coating processes - thermal spray, etc., laser cladding provides superior bonding strength and precision coating on a local area. In this study, surface characteristics are studied after laser cladding of low carbon steel using 18%Cr-2.5%Ni-Fe powder (Rockit404), known for its high hardness and excellent corrosion resistance. A diode laser with wavelength of 900-1070 nm is adopted as laser source under argon atmosphere; electrical power for the laser cladding process is 5, 6, and 10 kW. Fundamental surface characteristics such as crossectional microstructure and hardness profile are observed and measured, and special evaluation, such as a soldering test with molten ALDC12 alloy, is conducted to investigate the corrosion resistance characteristics. As a result of the die-soldering test by immersion of low carbon alloy steel in ALDC12 molten metal, the clad layer's soldering thickness decreases.

Adipose tissue macrophage heterogeneity in the single-cell genomics era

  • Haneul Kang;Jongsoon Lee
    • Molecules and Cells
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    • 제47권2호
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    • pp.100031.1-100031.13
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    • 2024
  • It is now well-accepted that obesity-induced inflammation plays an important role in the development of insulin resistance and type 2 diabetes. A key source of the inflammation is the murine epididymal and human visceral adipose tissue. The current paradigm is that obesity activates multiple proinflammatory immune cell types in adipose tissue, including adipose-tissue macrophages (ATMs), T Helper 1 (Th1) T cells, and natural killer (NK) cells, while concomitantly suppressing anti-inflammatory immune cells such as T Helper 2 (Th2) T cells and regulatory T cells (Tregs). A key feature of the current paradigm is that obesity induces the anti-inflammatory M2 ATMs in lean adipose tissue to polarize into proinflammatory M1 ATMs. However, recent single-cell transcriptomics studies suggest that the story is much more complex. Here we describe the single-cell genomics technologies that have been developed recently and the emerging results from studies using these technologies. While further studies are needed, it is clear that ATMs are highly heterogeneous. Moreover, while a variety of ATM clusters with quite distinct features have been found to be expanded by obesity, none truly resemble classical M1 ATMs. It is likely that single-cell transcriptomics technology will further revolutionize the field, thereby promoting our understanding of ATMs, adipose-tissue inflammation, and insulin resistance and accelerating the development of therapies for type 2 diabetes.

MOS Transistor를 이용한 착동증폭기 (MOS Transistor Differential Amplifier)

  • 이병선
    • 대한전자공학회논문지
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    • 제4권4호
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    • pp.2-12
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    • 1967
  • MOS 전계효과 transistor를 이용하여 직류착동증폭기를 설계하여 A 정도의 극미소직류전류를 측정하는 장치에 관한 연구이다. 등가회로를 이용하여 전압이득과 동상전압변별비를 주는 식을 유도하였으며 유효등가 source 저항을 대단히 높이기 위한 정전류원회로의 실현을 위한 해석을 하였다. 전압이득은 6.6, 상온에서의 drift는 하루에 1.5mv 정도이고 동상전압변별비는 최고 84db 이었다. 이것은 MOS transistor의 대단히 높은 입력저항의 특징을 살려 전잡상등에서 나오는 극미소직류전류의 측정을 간단하게 할 수 있게 하는 것이다.

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전기화학 Coating Method (Electrochemistry Coating Method)

  • 이상헌
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.372-373
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    • 2009
  • In this work, the effects of substrate on the formation of YBaCuO by CVD were investigated by observing the microstructure and the crystallographic orientation and by measuring the temperature dependence of electrical resistance. Source materials used to synthesize the YBaCuO superconducting film were beta-diketone chelates of Y, Ba and Cu. These chelates were evaporated at $137-264^{\circ}C$. The source vapors of Y, Ba and Cu were transported into hot zone by using Ar gas and $O_2$ gas was introduced separately.

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Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

  • Shin, Hong-Sik;Oh, Se-Kyung;Kang, Min-Ho;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제10권4호
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    • pp.260-264
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    • 2010
  • In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

레이놀즈수에 따른 평판 모델의 거칠기 함수에 관한 연구 (A STUDY FOR ROUGHNESS FUNCTION OF FLAT PLATE WITH REYNOLDS NUMBER)

  • 정태환;이정희;김재형
    • 한국전산유체공학회지
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    • 제21권4호
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    • pp.78-84
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    • 2016
  • In this paper, turbulence models for considering roughness in the open source code(OpenFOAM) was investigated. Wall function in the RANS(Reynolds-averaged Navier - Stokes) turbulence model was modified considering roughness on the flat plate by using roughness function. Correlation between the first layer height in the CFD model and roughness height of the plate was observed, and the most proper roughness function, and the first layer height from the plate wall in the CFD analysis was suggested in this paper.

저전압 저전력 혼성신호 시스템 설계를 위한 800mV 기준전류원 회로의 설계 (A Novel 800mV Beta-Multiplier Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems)

  • 권오준;우선보;김경록;곽계달
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.585-586
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    • 2008
  • In this paper, a novel beta-multiplier reference current source circuit for the 800mV power-supply voltage is presented. In order to cope with the narrow input common-mode range of the OpAmp in the reference circuit, shunt resistive voltage divider branches were deployed. High gain OpAmp was designed to compensate intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18um CMOS process with nominal Vth of 420mV and -450mV for nMOS and pMOS transistor respectively. The total power consumption including OpAmp is less than 50uW.

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