• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.772-778
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• 2005

In this paper, we designed the cylindrical type light source that had a electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the principle of transformer, electrically equivalent circuit of cylindrical type light source was analyzed. According to the parameters of electromagnetic induction which were diameter of coil with $0.3\~1.2\;mm{\Phi}$, number of turns with $4\~12$ turns, distance with $40\~120$ mm and RF power with $10\~150$ W, the electrical and optical properties were measured. When diameter of coil was $0.3\;mm{\Phi}$, number of turns was 8 turns and distance was 40 mm, the highest brightness of 29,730 $cd/m^2$ was shown with RF power 150 W. The relationship between electromagnetic induction and plasma discharges was shown by mode transition from E-mode to H-mode.

• 한국생물공학회:학술대회논문집
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• 2005.04a
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• pp.175-180
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• 2005

In this study, we investigated the optimal medium composition for bacterial cellulose (BC) production by Gluconacetobacter sp. RKY5. Among the various kinds of carbon sources, glycerol was the most efficient as a sole carbon source and its optimal concentration for BC production was 15 g/L. The optimal concentration of yeast extract as a nitrogen source for BC production was found to be 8 g/L. $K_{2}HPO_{4}$ and acetic acid were selected respectively as a phosphate source and a secondary substrate, and both optimal concentrations were 3 g/L. The amount of produced BC was 4.59 g/L in a static culture and 6.5 g/L in a shaking culture condition with 150 rpm. These values were 2.1 and 2.7 times higher than those in a static (2.16 g/L) and a shaking (2.41 g/L) cultures using HS medium generally used for BC production.

• The KSFM Journal of Fluid Machinery
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• v.7 no.3 s.24
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• pp.7-13
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• 2004

In this paper, we identify the noise source and the path of a chiller. This chiller is newly developed for R-l34a refrigerant and 250 RT cooling capacity. The measured overall SPL of the developed turbo-chiller is about 100 dBA. Due to the high rotating speed of the centrifugal impeller, the nun noise source of the chiller is the blade passing frequency and its higher harmonics of the centrifugal impeller. This generated soundpropagates through the duct, and then transmits and radiates to the outer field. From the experiment, it is found that the high frequency noise is mostlytransmitted and radiated through the elbow duct, but the low frequency noise is transmitted and vadiated through the condenser wall. Therefore applying the absorbing material is an effective way of reducing the high and low frequency noise simultaneously. Measurement results show that the application of the sound absorbing material to the elbow duct reduced the overall sound pressure level by 4 dB compared to the 9 dBA reduction for the case of full enclosure. In order to control the generated noise, a dissipativetype silencer is also designed and tested. The silencer reduced the radiated noise about 7.5 dBA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.328-329
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• 2006

반도체 소자의 소형화, 고질적화는 junction 깊이 감소와 도핑농도의 증가를 요구한다. 현재 상용화되는 도핑법은 이온빔 주입(Ion Beam Ion Implantation, IBII)인데, 이 방법은 낮은 가속에너지를 가하는 경우 이온빔의 정류가 금속이 감소해 주입 속도가 낮아져 대랑 생산이 어렵고 장비가 고가라는 단점이 있다. 하지만 플라즈마를 이용한 이온주입법 (Plasma Source Ion Implantation, PSII)은 공정 속도가 빠르고 제조비용이 매우 저렴해 새로운 이온주입법으로 주목받고 있다. PSII법에서 플라즈마 특성은 그 결과에 큰 영향을 미치므로 플라즈마 특성의 적절한 제어가 필수적으로 요구된다. 본 연구에서는 공정압력과 RF power를 변화시키며 플라즈마 밀도 측정했다. 그 결과 공정압력이 증가함에 따라서 플라즈마 밀도는 감소되었고 RF power 증가함에 따라서 플라즈마 밀도는 증가되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.54-57
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• 2002

In this study, a new programming method, to minimize the generation of Si-SiO$_2$ interface traps of scaled SONOS flash memory as a function of number of program/erase cycles has been proposed. In the proposed programming method, power supply voltage is applied to the gate, forward biased program voltage is applied to the source and the drain, while the substrate is left open, so that the program is achieved by Modified Fowler-Nordheim (MFN) tunneling of electron through the tunnel oxide over source and drain region. For the channel erase, erase voltage is applied to the gate, power supply voltage is applied to the substrate, and the source and drain are open. A single power supply operation of 3 V and a high endurance of 1${\times}$10$\^$6/ prograss/erase cycles can be realized by the proposed programming method. The asymmetric mode in which the program voltage is higher than the erase voltage, is more efficient than symmetric mode in order to minimize the degradation characteristics of scaled SONOS devices because electrical stress applied to the Si-SiO$_2$ interface is reduced by short programming time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.885-888
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• 2008

We present simulation results on DC characteristics of AlGaN/GaN HEMTs having trench shaped source/drain Ohmic electrodes. In order to reduce the contact resistance in the source and drain region of the conventional AlGaN/GaN HEMTs and thereby to increase their DC output power, we applied narrow-shaped-trench electrode schemes whose size varies from $0.5{\mu}m$ to $1{\mu}m$ to the standard AlGaN/GaN HEMT structure. As a result, we found that the drain current was increased by 13 % at the same gate bias condition and the transconductance (gm) was improved by 11 % for the proposed AlGaN/GaN HEMT, compared with those of the conventional AlGaN/GaN HEMTs.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.14 no.8
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• pp.668-674
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• 2004

The possibility of global noise reduction by the sound power control through selection of distribution and impedance of absorptive materials is discussed. It is necessary to investigate the relation between the global sound energy in the field and the total sound power radiated by sources. In the previous work,$^{(1.2)}$ the authors presented a useful design method to change boundary condition that can be useful to reduce noise in acoustically small enclosures. Changing boundary condition Is related to not only enclosure’s geometrical shape but also acoustical treatment on walls for example, attaching of impedance patches (ex: absorptive material). In many practical situations, we often meet situation to change acoustical treatment on walls. The possibility of total acoustic potential energy(globa1 noise) reduction by acoustic source power control is examined in an acoustically small cavity Using acoustic energy balance equation, the relation between global noise control performance and absorptive material’s arrangement/impedance is deduced. Numerical simulation is performed to interpret its physical meaning in terms of absorbent’s distribution and impedance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.5-10
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• 2003

In this study, a new programming method to minimize the generation of Si-SiO$_2$interface traps of SONOS nonvolatile memory device as a function of number of porgram/erase cycles was proposed. In the proposed programming method, power supply voltage is applied to the gate. forward biased program voltage is applied to the source and the drain, while the substrate is left open, so that the program is achieved by Modified Fowler-Nordheim(MFN) tunneling of electron through the tunnel oxide over source and drain region. For the channel erase, erase voltage is applied to the gate, power supply voltage is applied to the substrate, and the source and dram are left open. Also, the asymmetric mode in which the program voltage is higher than the erase voltage, is more efficient than symmetric mode in order to minimize the degradation characteristics or SONOS devices because electrical stress applied to the Si-SiO$_2$interface is reduced due to short program time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.600-603
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• 2000

Recently, Display devices have become important in the information-oriented society and flat display devices are greatly demanded. Liquid crystal display(LCD) represents one of the most promising devices for large size desk-top monitors, notebook PC and car navigation system. However LCD cannot give forth light itself and must have backlight system. The most popular backlighting system is composed of a lighting-guide plate and CCFL as a lighting source. The number of CCFL must increase up if the area of display is increased. So a new backlighting source with high luminance is needed for large LCDs. In this paper, we proposed a surface discharge FFL with the new electrode structure like the needle shaped electrode as the variation of cell structure to high luminance and low power consumption. In comparison with different electrode structure it has low discharge voltage and current and good optical characteristics. So it has better discharge characteristics than different surface discharge FFL and can be fungible for a backlight as a lighting source in LCDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.91-95
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• 2006

In whole world consciousness of environment maintenance have increased very quickly for the end of the 20th century. To use and disuse toxic substances have been controled at the field of industry. Also the field of lighting source belong to environmental control. And in the future the control will be strong. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem root. In the mercury free lighting source system the Xe gas lamp is one type. And the Ne:Xe mixing gas lamp improvements firing voltage of Xe gas lamp. Purpose and subject of this study are understand, efficiency, ideal of Ne:Xe plasma which mercury free lamp. Before ICP was designed, basic parameters of plasma, which are electron temperature and electron density, were measured and calculated by langmuir probe data. Property of electron temperature and electron density were confirmed by changing ratio of Ne:Xe.