Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Simulated DC Characteristics of AlGaN/GaN HEMls with Trench Shaped Source/Drain Structures

트렌치 구조의 소스와 드레인 구조를 갖는 AlGaN/GaN HEMT의 DC 출력특성 전산모사

  • 정강민 (고려대학교 전자전기공학과) ;
  • 이영수 (고려대학교 전자전기공학과) ;
  • 김수진 (고려대학교 전자전기공학과) ;
  • 김동호 (고려대학교 전자전기공학과) ;
  • 김재무 (고려대학교 전자전기공학과) ;
  • 최홍구 (전자부품연구원 나노바이오 의료기기 연구센터) ;
  • 한철구 (전자부품연구원 나노바이오 의료기기 연구센터) ;
  • 김태근 (고려대학교 전자전기공학과)
  • Published : 2008.10.01
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Abstract

We present simulation results on DC characteristics of AlGaN/GaN HEMTs having trench shaped source/drain Ohmic electrodes. In order to reduce the contact resistance in the source and drain region of the conventional AlGaN/GaN HEMTs and thereby to increase their DC output power, we applied narrow-shaped-trench electrode schemes whose size varies from $0.5{\mu}m$ to $1{\mu}m$ to the standard AlGaN/GaN HEMT structure. As a result, we found that the drain current was increased by 13 % at the same gate bias condition and the transconductance (gm) was improved by 11 % for the proposed AlGaN/GaN HEMT, compared with those of the conventional AlGaN/GaN HEMTs.

Keywords

References

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