• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.189-192
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• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• Journal of Powder Materials
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• v.8 no.3
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• pp.201-206
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• 2001

$>LaMnO_3$$(La, Sr)MO_3$, and $(La, Sr)MO_3/YSZ$ gel films were deposited by spin-coating technique on scandium-doped zirconia (YSZ) substrate using the precursor solution prepared from $La(O-i-C_3H_7)_3$, $Co(CH_3COO)_2$or $Mn(O-i-C_3H_7)_2$,2-methoxyethanol, and polyethylene glycol. By heat-treating the gel films, the electrochemical cells, $(La, Sr)MnO_3{\mid}ScSZ{\mid}Pt$ were fabricated. The effect of polyethylene glycol on the microstructure evolution of $$LaCoO_3and $LaMnO_3$thin films was investigated, and NOx decomposition characteristics of the electrochemical cells were investigated at $500^{\circ}C$ to $600^{\circ}C$. By applying a direct current to the $(La, Sr)MnO_3{\mid}ScSZ{\mid}Pt$ electrochemical cell, good NOx conversion rate could be obtained relatively at low current value even if excess oxygen is included in the reaction gas mixture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.641-643
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• 2003

The ferroelectric properties of PZT(53/47) thin film was investigated by methoxy enthanol solution based on sol-gel method. The thickness of each layer by spincoating 0.25M sol at one time was $0.1{\mu}m$ and crack-free film was formed. $LaNiO_3/Si(100)$ electrode and $Pt/Ti/SiO_2/Si(100)$ electrode was coated by PZT sol at several times. PZT orientation was confirmed as a method of XRD and coercive field(Ec) as well as remnant polarization(Pr) was investigated from hysterisis curve. As a result of XRD analysis, we can know that the orientation of on PZT/LNO/Si(100) is better than on $Pt/Ti/SiO_2/Si(100)$. The remnant polarization(Pr) in LNO electrode was $87.5{\mu}C/cm^2$ and $39.8{\mu}C/cm^2$ in Pt. From this figures, it is investigated that the Pr in LNO electrode was better than in Pt.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.6-11
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• 2016

For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.262-262
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• 2016

최근 고해상도 디스플레이가 주목받으면서 기존 비정질 실리콘(a-Si)을 대체할 수 있는 재료에 관한 연구가 활발히 진행되고 있다. a-Si의 경우 간단한 공정 과정, 적은 생산비용, 대면적화가 가능하다는 장점이 있지만 전자 이동도가 매우 낮은 단점이 있다. 반면, 산화물 반도체는 비정질 상태에서 전자 이동도가 높으며 큰 밴드갭을 가지고 있어 투명한 특성을 나타낼 뿐만 아니라, 저온공정이 가능하여 기판의 제한이 없는 장점을 가지고 있다. 대표적으로 가장 널리 연구되고 있는 산화물 반도체는 a-IGZO(amorphous indium-gallium-zinc oxide)이다. 그러나 InZnO(IZO) 기반의 산화물 반도체에서 carrier suppressor 역할을 하는 Ga(gallium)은 수요에 대한 공급이 원활하지 못하여 비싸다는 단점이 있다. 그러므로 경제적이면서 a-IGZO와 유사한 전기적 특성을 나타낼 수 있는 suppressor 물질이 필요하다. 따라서 본 연구에서는 IZO 기반의 산화물 반도체에서 Ga을 Hf(hafnium), Zr(zirconium), Si(silicon)으로 대체하여 용액증착(solution-deposition) 공정으로 각각의 채널층을 형성한 back-gate type의 박막 트랜지스터(thin-film transistor, TFT) 소자를 제작하였다. 용액증착 공정은 물질의 비율을 자유롭게 조절할 수 있고, 대기압의 조건에서도 공정이 가능하기 때문에 짧은 공정시간과 저비용의 장점이 있다. 제작된 소자는 p-type Si 위에 게이트 절연막으로 100 nm의 열산화막이 성장된 기판을 사용하였다. 표준 RCA 클리닝 후에 각 solution 물질을 spin coating 방식으로 증착하였다. 이후, photolithography, develop, wet etching의 과정을 거쳐 채널층 패턴을 형성하였다. 또한, 산화물 반도체의 전기적 특성을 향상시키기 위해서 후속 열처리 과정(post deposition annealing, PDA)은 필수적이다. CTA 방식은 높은 열처리 온도와 긴 열처리 시간의 단점이 있다. 따라서, 본 연구에서는 $100^{\circ}C$ 이하의 낮은 온도와 짧은 열처리 시간의 장점을 가지는 MWI (microwave irradiation)를 후속 열처리로 진행하였다. 그 결과, 각 물질로 구현된 소자들은 기존 a-IGZO와 비교하여 적은 양의 carrier suppressor로도 우수한 전기적 특성 및 안정성을 얻을 수 있었다. 따라서, Si, Hf, Zr 기반의 산화물 반도체는 기존의 Ga을 대체하여 저비용으로 디스플레이를 구현할 수 있는 IZO 기반 재료로 기대된다.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.943-952
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• 1991

Lead zirconate titanate(PZT) powders and thin films were prepared from an alkoxide-based solution by sol-gel method. Gelation of synthesized complex solutions, pyrolysis and crystallization behaviors of the dried powder were studied in accordance with a water content and a catalyst. PZT thin films were formed by spin-casting method on silicon and platinum substrates, and characterized. Ester produced from the reactions was completely removed when drying of the gel was finished. Pyrolysis property of the dried PZT gels were changed in order water content, class of catalyst, and quantity of catalyst. Crystalline Pb phase was transiently formed near 250$^{\circ}C$. Basic catalyst is good additive for a formation of perovskite phase in the films, and acidic catalyst for a densified film structure. By the analysis of RBS, Pb element in the PZT films were diffused into silicon substrate, and the pores, may be produced due to local densification around some grains in the films, make an origin of fault in microstructure when holding time goes to be longer at 700$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.809-812
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• 2004

(Pb,Sr)TiO3 (PST) thin films were fabricated by using the alkoxide-based sol-gel method. The PST stock solution was made and then spin-coated onto a PUTi/SiO2/Si substrate. The coating and drying procedures were repeated several times, and the PST thin films were sintered at 450-650 C for 1 h. All PST thin films showed dense and homogeneous structures without the presence of any rosette structure. The thicknesses of the PST thin films were approximately 200 nm. The dielectric constant and the dielectric loss of the PST thin films sintered at 550 C were about 404 and 0.0023, respectively. The leakage current density of the PST thin film sintered at 550 C was 3.13 x 10-8 A/cm2 at 1 V.

• Corrosion Science and Technology
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• v.14 no.6
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• pp.261-266
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• 2015

The capacity of passive metal to repassivate after film damage determines the development of local corrosion and the resistance to corrosion failures. In this work, the repassivation kinetics of 316L stainless steel (316L SS) was investigated in borate buffer solution (pH 9.1) using a novel abrading electrode technique. The repassivation kinetics was analyzed in terms of the current density flowing from freshly bare 316L SS surface as measured by a potentiostatic method. During the early phase of decay (t < 2 s), according to the Avrami kinetics-based film growth model, the transient current was separated into anodic dissolution ($i_{diss}$) and film formation ($i_{film}$) components and analyzed individually. The film reformation rate and thickness were compared according to applied potential. Anodic dissolution initially dominated the repassivation for a short time, and the amount of dissolution increased with increasing applied potential in the passive region. Film growth at higher potentials occurred more rapidly compared to at lower potentials. Increasing the applied potential from 0 $V_{SCE}$ to 0.8 $V_{SCE}$ resulted in a thicker passive film (0.12 to 0.52 nm). If the oxide monolayer covered the entire bare surface (${\theta}=1$), the electric field strength through the thin passive film reached $1.6{\times}10^7V/cm$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.185-202
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• 2018

Photoelectrochemical (PEC) cells can convert solar energy, the largest potential source of renewable energy, into hydrogen fuel which can be stored, transported, and used on demand. In terms of cost competitiveness compared with fossil fuels, however, both photocatalytic efficiency and cost-effectiveness must be achieved simultaneously. Improvement of cost-effective, scalable, versatile, and eco-friendly fabrication methods has emerged as an urgent mission for PEC cells, and solution-based fabrication methods could be capable of meeting these demands. Herein, we review recent challenges for various nanostructured oxide photoelectrodes fabricated by solution-based processes. Hematite, tungsten oxide, bismuth vanadate, titanium oxide, and copper oxides are the main oxides focused on, and various strategies have been attempted with respect to these photocatalyst materials. The effects of nanostructuring, heterojunctions, and co-catalyst loading on the surface are discussed. Our review introduces notable solution-based processes for water splitting photoelectrodes and gives an outlook on eco-friendly and cost-effective approaches to solar fuel generation and innovative artificial photosynthesis technologies.