• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.451-456
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• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.277-279
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• 2016

Nanowire-FET은 Gate-All-Around (GAA) 구조로 차세대 반도체 소자 구조로 여겨지고 있다. Nanowire-FET은 채널 두께에 따라 $I_D-V_G$ curve에 매우 중요한 영향을 끼친다. 따라서 본 논문은, Edison 시뮬레이션을 이용하여 Nanowire-FET의 Silicon Thickness에 따른 여러 특성을 비교하여 최적 Silicon Thickness에 대해 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.33-33
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• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.434-438
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• 2014

CMOS의 최종형태로써 Gate-All-Around(GAA) Silicon Nanowire(NW)가 각광받고 있다. 이 논문에서 NW FET(Field Effect Transistor)의 채널 길이와 NW의 폭과 같은 size에 따른 특성변화를 실제 실험 data와 NW FET 특성분석 simulation을 이용해서 비교해보았다. MOSFET(Metal Oxide Semiconductor Field Effect Transistor)의 소형화에 따른 쇼트 채널 효과(short channel effect)에 의한 threshold voltage($V_{th}$), Drain Induced Barrier Lowering(DIBL), subthreshold swing(SS) 또한 비교하였다. 이에 더하여, 기존의 상용툴로 NW를 해석한 시뮬레이션 결과와도 비교해봄으로써 NW의 size scaling에 대한 EDISON NW 해석 simulation의 정확도를 파악해보았다.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.424-427
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• 2017

This study investigated the effect of strain on hole mobility and hole effective mass in a p-channel rectangular nanowire with two-dimensional confinement. We obtained the valence energy band structure using the six-band k.p method and calculated the mobility and effective mass of the hole in the [100] direction taking the strain effect into account in the inversion region. The hole mobility of strained silicon was calculated using Kubo-Greenwood formalism. As a result, it showed good performance compared to relaxed silicon, but its magnitude was insignificant.

• Korean Journal of Materials Research
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• v.34 no.8
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• pp.395-399
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• 2024

Among various organic materials suitable for silicon-based inorganic-organic hybrid solar cells, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has been extensively studied due to its high optical transmittance, high work function, and low bandgap characteristics. The electro-optical properties of PEDOT:PSS have a significant impact on the power conversion efficiency of silicon-organic hybrid solar cells. To enhance the photovoltaic properties of the silicon-organic hybrid solar cells, we developed a method to improve the properties of the PEDOT:PSS film using Ag nanowires (NW) instead of conventional solvent addition methods. The influence of the Ag NW on the electro-optical property of the PEDOT:PSS film and the photovoltaic performance of the silicon-organic hybrid solar cells were investigated. The addition of Ag NW further improved the sheet resistance of the PEDOT:PSS film, enhancing the performance of the silicon-organic hybrid solar cells. The present work using the low sheet resistance PEDOT:PSS layer paves the way to develop simple yet more efficient silicon-organic hybrid solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.407-407
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• 2014

Nanotechnology, especially vertically grown silicon nanowires, has gotten great attentions in biology due to characteristics of one dimensional nanostructure; controllable synthetic structure such as lengths, diameters, densities. Silicon nanowires are promising materials as nanoelectrodes due to their highly complementary metal-oxide-semiconductor (CMOS) - and bio-compatibility. Silicon nanowires are so intoxicated that are effective for bio molecular delivery and electrical stimulation. Vertical nanowires with integrated Au tips were fabricated for electrical intracellular interfacing with PC-12 cells. We have made synthesized two types of nanowire devices; one is multi-nanowires electrode for bio molecular sensing and electrical stimulation, and the other is single-nanowires electrode respectively. Here, we demonstrate that differentiation of Nerve Growth Factor (NGF) treated PC-12 cells can be promoted depending on different magnitudes of electrical stimulation and density of Si NWs. It was fabricated by both bottom-up and top-down approaches using low pressure chemical vapor deposition (LPCVD) with high vacuuming environment to electrically stimulate PC-12 cells. The effects of electrical stimulation with NGF on the morphological differentiation are observed by Scanning Electron Microscopy (SEM), and it induces neural outgrowth. Moreover, the cell cytosol can be dyed selectively depending on the degree of differentiation along with fluorescence microscopy measurement. Vertically grown silicon nanowires have further expected advantages in case of single nanowire fabrication, and will be able to expand its characteristics to diverse applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.132-132
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• 2009

A 2D-simulation using a quantum model of silicon nanowire (SiNW) field-effect transistors (FETs) have been performed by the effective mass theory. We have investigated very close for real device analysis, so we used to the non-equilibrium Green's function (NEGF) and the density gradient of quantum model. We investigated I-V characteristics curve and C-V characteristics curve of the channel thickness from 5nm to 200nm. As a result of simulation, even higher drain current in SiNW using a quantum model was observed than in SiNW using a non-quantum model. The reason of higher drain current can be explained by the quantum confinement effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.303.1-303.1
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• 2014

좋은 전기적 특성을 가지면서 소자의 크기를 줄이기에 용이한 Gate-all-around (GAA) twin Si nanowire field-effect transistors (TSNWFETs)의 연구가 많이 진행되고 있다. Switching 특성과 단채널 효과가 없는 TSNWFETs의 특성은 GAA 구조의 본질적인 특성이다. TSNWFETs는 기존의 single Si nanowire TSNWFETs와 bulk FET에 비하여 Drive current가 nanowire의 지름에 많은 영향을 받지 않는다. 그러나 TSNWFETs의 전체 on-current는 훨씬 작고 nanowire의 지름이 작아지면서 줄어들게 되면서 소자의 sensing speed와 sensing margin 특성의 악화를 가지고 온다. GAA TSNWFETs의 제작 및 전기적 실험에 대한 연구는 많이 진행되었으나, GAA TSNWFETs의 전기적 특성에 대한 이론적 연구는 매우 적다. 본 연구에서는 GAA TSNWFETs의 nanowire 크기에 따른 전기적 특성을 관찰하였다. GAA TSNWFETs와 bulk FET의 전기적 특성을 양자역학을 고려하여 3차원 TCAD 시뮬레이션을 툴을 이용하여 계산하였다. GAA TSNWFETs와 bulk FET의 전류-전압 특성 계산을 통해 on-current 크기, subthreshold swing, drain-induced barrier lowering (DIBL), gate-induced drain leakage를 보았다. 전류가 흐르는 경로와 전기적 특성의 물리적 의미에 대한 연구를 위해 TSNWFETs에서의 전류 밀도, conduction band edge, potential 특성을 분석하였다. 시뮬레이션 결과를 통해 Switching 특성, 단채널 효과에 대한 면역 특성, nanowire의 단면적에 따른 전류 흐름을 보았다. nanowire의 크기가 작아지면서 DIBL이 증가하고 문턱전압과 전체 on-current는 감소하면서 소자의 특성이 악화된다. 이러한 결과는 GAA TSNWFETs의 전기적 특성을 이해하고 좋은 소자 특성을 위한 구조를 연구하는데 많은 도움이 될 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.178-179
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• 2006

나노 크기를 가지는 DNA 분자를 template로 사용하여 전도성 고분자의 일종인 polypyrrole nanowire를 합성하였다. 본 논문에서 합성된 polypyrrole nanowire는 단량체인 pyrrole과 산화제와의 화학적인 반응에 의해 만들어졌다. 먼저 DNA 분자를 APTES(3-aminopropyltriethoxysilane) modified Si surface 위에 정렬한다. 그리고 이 기판을 농도를 달리한 pyrrole solution에서 incubationn한다. 마지막으로 APS (ammonium persulfate)와 반응시켜 conductive nanowire를 합성하였다. SEM을 이용하여 silicon 기판위에 1차원적으로 정렬된 나노 크기를 가지는 polypyrrole nanowire를 관찰할수 있었다. 그리고 pyrrole의 농도에 따라 nanowire의 uniformity를 조절할 수 있었다.