• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.39-43
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• 2017

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from $6.83{\times}10^{18}cm^{-3}$ to $1.27{\times}10^{19}cm^{-3}$ and from 62 to $89cm^2/V{\cdot}s$, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.

• Journal of IKEEE
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• v.18 no.2
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• pp.214-219
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• 2014

In this paper, the usage of tilt-implanted trench Schottky diode(TITSD) based on silicon carbide is proposed. A tilt-implanted trench termination technique modified for SiC is proposed as a method to keep all the potentials confined in the trench insulator when reverse blocking mode is operated. With the side wall doping concentration of $1{\times}10^{19}cm^{-3}$ nitrogen, the termination area of the TITSD is reduced without any sacrifice in breakdown voltage while potential is confined within insulator. When the trench depth is set to 11um and the width is optimized, a breakdown voltage of 2750V is obtained and termination area is 38.7% smaller than that of other devices which use guard rings for the same breakdown voltage. A Sentaurus device simulator is used to analyze the characteristics of the TITSD. The performance of the TITSD is compared to the conventional trench Schottky diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.208-212
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• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.96-100
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• 2005

The planar Schottky diodes were fabricated and modeled to probe the device applicability of the cracked GaN epitaxial layer on a (111) silicon substrate. On the unintentionally n-doped GaN grown on silicon, we deposited Ti/Al/Ni/Au as the ohmic metal and Pt as the Schottky metal. The ohmic contact achieved a minimum contact resistivity of $5.51{\times}10.5{\Omega}{\cdot}cm^{2}$ after annealing in an $N_{2}$ ambient at $700^{\circ}C$ for 30 sec. The fabricated Schottky diode exhibited the barrier height of 0.7 eV and the ideality factor was 2.4, which are significantly lower than those parameters of crack free one. But in photoresponse measurement, the diode showed the peak responsivity of 0.097 A/W at 300 nm, the cutoff at 360 nm, and UV/visible rejection ratio of about $10^{2}$. The SPICE(Simulation Program with Integrated Circuit Emphasis) simulation with a proposed model, which was composed with one Pt/GaN diode and three parasitic diodes, showed good agreement with the experiment.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.3
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• pp.9-24
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• 1968

This report is concerned with the optimum design of hyper-aprupt p-n junctiea silion diode and fabriction of this diode usable for electrical tuning application. Impurity profile in the junction was assumed to clean exponential function. With this assunntion, an optimum criterion for designing standard AM radio tuning capacitor was derived. In the diffusion process, after aluminum and antimony as impurties were deposited in vacuum on a P-type silicon wafer, the diffusion was followed by loading the wafer into the high temperature furnace.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.107-111
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• 2015

Current characteristic curve of an illuminated solar cell was used to determine its reverse saturation current density ($J_0$), ideality factor (n) and resistances, by using numerical diode simulation. High efficiency amorphous silicon, heterojunction crystalline Si (HIT), plastic and organic-inorganic halide perovskite solar cell shows n=3.27 for a-Si and n=2.14 for improved HIT cell as high and low n respectively, while the perovskite and plastic cells show n=2.56 and 2.57 respectively. The $J_0$ of these cells remain within $7.1{\times}10^{-7}$ and $1.79{\times}10^{-8}A/cm^2$ for poorer HIT and improved perovskite solar cell respectively.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1440-1441
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• 1995

We fabricated diode-type silicon field emitter array device and tested the current-voltage characteristics. Silicon oxide layer having the thickness of $1{\mu}m$ is grown in the (100) oriented n-type silicon substrates. Oxide layer is patterned by the mask with $10{\mu}m$ diameter circles. Silicon substrate is then etched using NAF 1 solution to form the sharp tip arrays as an electron source. In the UHV test station, we tested the current-voltage characteristics for the samples. Turn-on voltage was about 140V and maximum emission current was $310{\mu}A$ at 164V. We studied about silicon bonding process for future work, too.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.864-867
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• 2003

Since the development of semiconductors, various related research has been conducted. During research, silicon diodes have been commonly used because of their simplicity and low cost in the manufacturing process. This research deals with p-n junction threshold voltages from silicon diodes due to transport current at a cryogenic temperature. At a cryogenic temperature(77K) we could get minimum current which junction threshold voltage becomes constant. This is experimented on GPIB communication and it consist of programmable current source, multimeter which gauge the threshold voltage in a very low temperature caused by transport current from 5nA to 1mA and $LN_2$(77K) for coolant. This experiment is programmed all process using Measurement studio(Lab window) tool.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.