• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.9-11
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• 2013

The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.307-311
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• 2017

ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heat treatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films were investigated in this study. As heat treatment temperature was increased, crystal quality was improved first and then it was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheet resistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surface roughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtaining films with better electrical characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.2059-2059
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• 2011

This study focused on the performance characteristics of dye-sensitized solar cell electrodes used in the IZO films were investigated. The experiment measured an sheet resistance and transmittance. Measured results showed 90% transmittance, sheet resistance also 18.3 ${\Omega}$/cm]. The results were indicated applications of dye-sensitized solar cell and optoelectronic devices, transparent electrodes.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.725-729
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• 2014

In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs) was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for the reduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the results showed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of power conversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by 0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by using electrochemical impedance analyzer (EIS).

• 한국안전학회지
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• 제27권5호
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• pp.126-134
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• 2012

The purpose of this study is to investigate waterproofing performance of self adhesive sheet combined polymer resin and poly-iso butylene. For the performance estimation of external waterproofing of concrete underground structures, there can be required various properties such as adhesion strength, hair crack resistance, repeat low and high temperature test, and so on. In this study, there engineering properties of composite system using polymer resin and poly-iso butylene were examined and could be confirmed to satisfy the guidelines of KS. Especially, it was turn out that the adhesion properties was excellent and high crack-resistance up to 1.49mm will be perform.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1054-1056
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• 2002

High temperature Kermal diffusion from $POCl_3$ source usually used for conventional process through put of a cell manufacturing line and potentially reduce cell efficiency through bulk like time degradation. To fabricate high efficiency solar cells with minimal thermal processing, spin-on-doping(SOD) technique can be employed to emitter diffusion of a silicon solar cell. A technique is presented to emitter doping of a mono-crystalline solar cell using spin-on doping (SOD). Moreover it is shown that the sheet resistance variation with RTA temperature and time fer mono-crystalline and multi-crystalline silicon samples. This novel SOD technique was successfully used to produces 11.3% efficiency l04mm by 104mm size mono-crystalline silicon solar cells.

• 한국표면공학회지
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• 제34권3호
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• pp.187-194
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• 2001

Galvalume sheet steel was developed recently, and is used widely in several fields. It has and had a good corrosion resistance in open atmosphere, but it has week corrosion resistance in the ambient surroundings of an airtight packing. Therefore, black patina was synthesized on the surface of Galvalume sheet steel. Corrosion by moisture on a Galvalume surface begins from edge of a droplet and proceeds to the center of droplet. It begins mainly on the interdendritic structure instead of dendritic structure. This suggests that corrosion by moisture occurs on the Zn shrinkage hole from rapid air cooling. In addition, the initial corrosion occurs by the local cell and continues by the oxygen concentration cell.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.300-303
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• 2006

Sandwich panel with inner structure is expected to find many applications because of high stiffness to mass ratio. However, low resistance to the pressure in the thickness direction may become a weak point in the forming process. Two pyramid type designs for inner structure are considered. For the resistance characteristics in the thickness direction, finite element simulations are carried out. For one design, experimental results are provided. It is shown that simulation can give a reasonable agreement with experiment. The reasons for the discrepancy are discussed mainly in the geometrical viewpoint. It is observed that most of deformation depends on bending mode. Two designs are compared using simulation.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1112-1115
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• 2005

In this study, we performed excimer laser activation on Phosphorus or Boron doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.237-240
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• 2002

In this W, a NiSi technology suitable for sub-100nm CMOS sevice is proposed. It seems that capping layer has little effect on the sheet resistance and junction leakage current when there is no thermal treatment. However, there happened agglomeration and drastic increase of Junction leakage current without capping layer. In other word, capping layer especially TiN capping layer is highly effective in suppressing thermal effect. It is shown that the sheet resistance of 0.12${\mu}{\textrm}{m}$ linewidth and shallow p+/n junction with NiSi were stable up to 700 t /30 minute thermal treatment.