• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.677-680
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• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.111-117
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• 2002

In this paper, we proposed calibration techniques to improve measurement accuracy in the characteristic analysis system for semiconductor devices. Systematic errors can be reduced using proposed calibration techniques. Also, error current reduction procedures including leakage current and offset current are proposed to measure low-level current in pA level. Calibration parameters are calculated and stored by microprocessor using least-square fitting with measured sample data. During measurement time microprocessor corrects measured data using stored calibration parameters. Experimental results show that current measurement error above nA level is less than 0.02%. And they also show that current measurement in pA level can be performed with about 0.2% accuracy.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.1
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• pp.128-133
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• 2013

Si Nanowire (Si-NW) arrays were fabricated by top-down method. A relatively simple method is suggested to fabricate suspended silicon nanowire arrays. This method allows for the production of suspended silicon nanowire arrays using anisotropic wet etching and conventional MEMS method of SOI (Silicon-On-Insulator) wafer. The dimensions of the fabricated nanowire arrays with the proposed method were evaluated and their effects on the Field Effect Transistor (FET) characteristics were discussed. Current-voltage (I-V) characteristics of the device with nanowire arrays were measured using a probe station and a semiconductor analyzer. The electrical properties of the device were characterized through leakage current, dielectric property, and threshold voltage. The results implied that the electrical characteristics of the fabricated device show the potential of being ion-selective field effect transistors (ISFETs) sensors.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.348-352
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• 2022

Hydrogen gas (H₂) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H₂ gas sensor with high performance. In this paper, we confirmed that H₂ gas detection ability of SnO₂ based H₂ gas sensor along with thermal treatment effect of SnO₂. Proposed SnO₂ based H₂ gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO₂ thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H₂ gas detection ability is estimatied by measuring output current of H₂ gas sensor. Based on experimental results, fabricated H₂ gas sensor with SnO₂ thin film which is thermally treated at 700 ℃ has a superior H₂ gas detection ability, and it can be expected to utilize at the practical applications.

• Journal of Sensor Science and Technology
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• v.32 no.3
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• pp.194-198
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• 2023

With the recent development of industrial technology, the problem of odor due to leakage of toxic gas discharged from industrial complexes is gradually increasing. Among them, hydrogen sulfide is a colorless representative odorous substance that can cause pain through irritation of the mucous membranes of the eyes and respiratory tract, and is a gas that can cause central nervous system paralysis and suffocation when exposed to high concentrations. Therefore, in order to improve the odor problem, research on a gas sensor capable of quickly and reliably detecting a leak of hydrogen sulfide is being actively conducted. A lot of research has been done on the existing metal oxide-based hydrogen sulfide gas sensor, but it has the disadvantage of requiring low selectivity and high temperature operating conditions. Therefore, in this study, a Pt/CNT-based electrochemical hydrogen sulfide gas sensor capable of detecting at low temperatures with high selectivity for hydrogen sulfide was developed. A working electrode capable of selectively detecting only hydrogen sulfide was fabricated by synthesizing Pt nanoparticles as a catalyst on functionalized CNT and applied to an electrochemical hydrogen sulfide gas sensor. It was confirmed that the manufactured Pt/CNT-based electrochemical hydrogen sulfide gas sensor has a current change of up to 100uA for hydrogen sulfide, and the both response time and recovery time were within 15 seconds.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.10
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• pp.59-65
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• 2007

Recently, ubiquitous sensor network(USN) techniques have been applied to electric power facility management. This paper dealt with the designed and fabricated ubiquitous sensors which monitor transformers and lightning arresters installed in overhead distribution systems. The sensors consist of a 8-[bit] microprocessor unit, a wireless communication nodule specified in IEEE 802.15.4, and associated electronics. A Rogowski coil was fabricated to measure load of transformer and surge current without saturation having good linearity up to 1000[A]. A zero-phase current transformer with a high relative permeability of $10^5$ at 180[Hz] was used to detect small leakage current of $50[{\mu}A]{\sim}1[mA]$ flowing lightning arrester, and the frequency bandwidth of the module is ranges from 12[Hz] to 1.24[kHz] at -3[dB].

• Journal of IKEEE
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• v.23 no.4
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• pp.1457-1460
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• 2019

In this paper, we proposed the development of a mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarm that can be location-tracked and irradiated. To measure radiation exposure dose, we use the PIN-Diode radiation measurement sensor module, a semi-conductive radiation measurement sensor that can minimize size and weight. The design for removing leakage current is carried out to enhance the characteristics of the radiation measurement sensor using PIN-Diode. The IMU sensor module is used to estimate the location of the current fireman at the same time as the accident estimate by adding together the data and the values for acceleration on the three axis. Experiments were conductied by an authorized testing agency to determine the efficiency of the proposed mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarms. The cumulative dose measurement range was measured in the range of 10 μSv to 10 mSv, the highest level in the world. The accuracy was measured from ±6.3% to ±9.0% (137 Cs) and normal operation was found at the international standard of ±15%. In addition, positional accuracy was measured within ±10%, resulting in a high level of results, demonstrating its effectiveness. Therefore, it is expected that more firemen will be able to provide with superior performance integrated radiation exposure protection fireman life-saving alarm.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.48-58
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• 1998

For the purpose of designing novel capacitance pressure sensor, several effects on sensitivity such as parasitic capacitance effects, temperature/thermal drift and leakage current have to be eleiminated. This paper proposed the experimental studies on frequency compensation method by electronic circuit technique, C-V converting method with switched capacitor and C-F converting method with schmitt trigger circuit. The third interface circuit by frequency compensation method is composed to eliminate the drift and leakage component by comparision sensing frequency with reference frequency. The signal transmission is realized by digital signal to minimize the influence of noise and high resolution is obtained by means of increasing the number of digital bits. In the fabricated high performance C-V interface, the offset voltage was not appeared, and in case of voltage source, 4.0V, feed back capacitance, 10㎊, the pressure, 0~10 ㎪, the sensitivity of C-V converter is 28 ㎷/㎪.V, the temperature drift characteristic, 0.051 %F.S./$^{\circ}C$ and C-F converter shows -6.6 Hz/pa, 0.078 %F.S./$^{\circ}C$ respectively, relatively good ones.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.20-27
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• 2011

A CMOS Image Sensor(CIS) mounted on mobile appliances always needs a low power consumption because of the battery life cycle. In this paper, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination, a low power single slope A/D converter with a novel comparator, and etc. Based on 0.13um CMOS process, the chip satisfies QVGA resolution($320{\times}240$ pixels) whose pitch is 2.25um and whose structure is 4-Tr active pixel sensor. From the experimental results, the ADC in the middle of CIS has a 10-b resolution, the operating speed of CIS is 16 frame/s, and the power dissipation is 25mW at 3.3V(Analog)/1.8V(Digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption is reduced approximately by 22% in sleep mode, 20% in operating mode.