• Journal of Information Display
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• v.3 no.1
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• pp.11-16
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• 2002

This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.469-474
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• 1999

Methods and systems to remove static electricity are requested in the field of industry because the static electricity causes a flammable gas explosion or fire and a reduction of production rate in manufacturing semiconductor devices and so on. This paper is a basic study about a new structure of electrode system to control the quantities of generated ions and to solve the problem of dust attachment to needle electrode. In addition, a new type field controlled electrostatic charge neutralizer was proposed, and it could control the electric field in the end of the needle electrode by controlling the voltage of the third electrode around the tip of the needle electrode. As aresult, it was possible to control the quantities of generated ion by controlling the electric field in the needle electrode with the third electrode, which shows the possibilities to solve the nonequilibrium of generated ions in ac power source and the problem of the dust in the needle electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.60-60
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• 2010

1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide($Bi_2O_3$) is an important p-type semiconductor with main crystallographic polymorphs denoted by $\alpha-$, $\beta-$, $\gamma-$, and $\delta-Bi_2O_3$[1]. Due to its unique optical and electrical properties, $Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study, $Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at $270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at $300^{\circ}C$ for 2h in $O_2$ ambient, we successfully fabicated $Bi_2O_3$nanowires.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.27-32
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• 2003

Highly reproducible side-wall process for the fabrication of the fine gate length as small as 40nm was developed. This process was utilized to fabricate 40nm InGaAs HEMTs with the 65% strained channel. With the usage of the dual $SiO_2$ and $SiN_x$ dielectric layers and the proper selection of the etching gas, the final gate length (Lg) was insensitive to the process conditions such as the dielectric over-etching time. From the microwave measurement up to 40GHz, extrapolated fT and fmax as high as 371 and 345 GHz were obtained, respectively. We believe that the developed side-wall process would be directly applicable to finer gate fabrication, if the initial line length is lessened below the l00nm range.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.620-623
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• 2003

The material processing by using ultrashort pulse laser, in recently, is actively applying into the micro machining and nano-machining technology since ultrashort pulse has so faster than the time which the electrons energy absorbing photon energy is transmitted to surrounding lattice-phonon that it has many advantages in point of machining. The micro machining of metallic thin film on the plain glass is widely used in the fields such as mask repairing for semiconductor, fabrication of photonic crystal, MEMS devices and data storage devices. Therefore, it is important to secure the machining technology of the sub-micron size. In this research, we set up the machining system by using ultrashort pulse laser and conduct on the Cr 200nm thin film ablation experiments of spot and line with the variables such as energy, pulse number, speed, and so on. And we observed the characteristics of surrounding heat-affected zone and by-products appeared in critical energy density and higher energy density through SEM, and also examined the machining features between in He gas atmosphere which make pulse change minimized by nonlinear effect and in the air. Finally, the pit size of 0.8${\mu}{\textrm}{m}$ diameter and the line width of 1${\mu}{\textrm}{m}$ could be obtained.

• Journal of Power System Engineering
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• v.12 no.6
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• pp.70-77
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• 2008

The purpose of this study is to compare the quality of digital radiography image with that of classical film images for welded structure in power plants. The CMOS(Complementary Metal Oxide Semiconductor) flat panel detecter and Agfa D5 film are used to image flaw specimens respectively. In the test, CMOS flat panel detector has been determined to have a better image than that of film image. In the IQI(Image Quality Indicator) transmission test, one or two more line can be seen in digital image than in film image. Digital Radiography Test enabled to successfully detect all defects on the weld specimens fabricated with real reheat stem pipe and boiler tube as well. In the specific comparison test, Digital radiography test detected micro flaws in the size of 0.5 mm in length by 0.5 mm in depth. However, film test has limited it to 1.0 mm in length by 1.0 mm in depth. As a result of this study, digital radiography technology is estimated well enough to perform the inspection in the industry with far more cost effective way, compared to the classical film test.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.179-184
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• 2012

The size of various alumina ceramics used in semiconductor and display industry is required to increase with increase in wafer and panel size. In this research, large alumina ceramics were fabricated by uniaxial pressing, cold isostatic pressing and filter pressing with commercial powder and thereafter sintering at $1600^{\circ}C$ in gas furnace. The large alumina ceramics exhibited dense microstructure corresponding to 98.5% of theoretical density and 99.8% of high purity. The impurities and microstructural defects of the alumina were found to influence the resistance and dielectric properties. The volume resistances in these four aluminas were almost the same while the pure alumina was higher value. The dielectric constant, dielectric loss and dielectric strength of aluminas were placed within the range of 10.3~11.5, 0.018~0.036, and 10.1~12.4 kV/mm, respectively.